diode deg avalanche zo 150 20

Abstract: IRFF210R IRFF211R IRFF212R IRFF213R
Contextual Info: Rugged Power MOSFETs_ IRFF210R, IRFF211R, IRFF212R, IRFF213R File Num ber 2025 Avalanche Energy Rated N-Channel Power MOSFETs 1.8A and 2.2A, 150V-200V N-CHANNEL ENHANCEMENT MODE rDs on = 1.5Q and 2.40 D Features: • Single pulse avalanche energy rated

FF212R

Abstract: 4440 ic circuit diagram
Contextual Info: J J Ì H A R R I S I I R F F 2 R 1 R F 2 1 2 1 1 / / 2 R 1 / / 1 2 1 2 2 1 R 2 / / 2 2 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features • F Package T 0 -2 0 5 A F 1 .8 A a n d 2 .2 A , 1 5 0 V - 2 0 0 V BOTTOM VIEW • rD S o n = 1 -5 f l a n d 2 . 4 f l

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

Contextual Info: • M302271 DÖSm4S HARRIS b07 ■ HAS IRFF2 10/ 2 1 1 / 2 1 2 /2 1 3 IRFF2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F BOTTOM VIEW • 1 .8 A and 2.2A, 150V - 200V • rDS on = 1 -5 il and 2 .4 Cl

IRFP237

Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
Contextual Info: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13