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    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441

    AN-949B

    Abstract: No abstract text available
    Text: APPLICATION NOTE 949B Current Ratings, Safe Operating Area, and High Frequency Switching Performance of Power HEXFETl B y S. C L E M E N T E , B.R. P E LLY , R. R U T T O N S H A Summary This application note discusses the current handling capability, safe op­


    OCR Scan     		PDF AN-949B AN-949B

    irf244

    Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
    Text: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s


    OCR Scan     		PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 1RF442 irf244 IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRF224

    Abstract: IRF154 N IRF034 IRF035 IRF123 IBF220
    Text: - 250 - T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 O-204AE IRF250 IRF252 IRF224 IRF154 N IRF035 IRF123 IBF220

    irf113

    Abstract: 1RF243 irf244 IRF242 IRF243 IRF245 IRF252 1RF222
    Text: - ft A gj £ *± Vd s or € £ Vg s Ig s s Pd Id * /CH Vd g a t§ <Ta=25^C V g s th) Id s s rain * /CH Id nA) & F os(on) Vd s = Vg s max ft & Id (on) Ciss g fs Coss ft Crss Vg s =0 (max) *typ V g s (0) (V) *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ)


    OCR Scan     		PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 O-204AE IRF250 irf113 1RF243 irf244 IRF242 IRF243 IRF245 IRF252 1RF222

    MTP565

    Abstract: application circuits of IRF330 AN-936A
    Text: APPLICATION NOTE 936A The Do’s and Don’ts of Using Power HEXFETs By B R IA N R. PE LLY Summary In common with all power semi­ conductor devices, power M O S F E T s have their own technical subtleties, which must be properly understood if the designer is to get the most out of


    OCR Scan     		PDF 1RF330 MTP565 HPWR6504 VN400IA VN0340B1 AN-936A application circuits of IRF330 AN-936A

    Untitled

    Abstract: No abstract text available
    Text: • 43CI2271 0053=130 HARRIS A3? ■ HAS IR F330/331/332/333 IRF330R/331R/332R/333R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 4.5A and 5.5A, 350V - 400V • rDS on = 1-o fl and 1-5i^ • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 43CI2271 F330/331/332/333 IRF330R/331R/332R/333R IRF330, IRF331, IRF332, IRF333 IRF330R, IRF331R, IRF332R,

    1RF330

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T R S /R IME F D I t3fci72SM OGä^fc,?! 4 | 7-3Ÿ-I/ MOTOROLA • I SEM IC O N D U C T O R TECHNICAL DATA IRF330 IRF331 IRF333 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silico n Gate T M O S These T M O S Power FETs are designed for high


    OCR Scan     		PDF t3fci72SM IRF330 IRF331 IRF333 IRF330, IRF333 1RF330, 1RF330

    IRF330

    Abstract: No abstract text available
    Text: 7964142 - í « S ^ M S U N G S E M IC O N D U C T O R D E I TTtiMms D D D S i m IN C 9 8 D 0 5114 7 “ D 7 ^ 3 7 -// N-CHANNEL POWER MOSFETS IRF330/331Z332/333 FEATURES • • • • • • • • Low RDS on Improved inductive ruggedness Fast switching times


    OCR Scan     		PDF IRF330/331Z332/333 IRF330 IRF331 IRF332 IRF333 OOGS43S