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    MFE910 Search Results

    MFE910 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MFE910 Motorola FET Transistor, N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR Original PDF
    MFE910 Motorola European Master Selection Guide 1986 Scan PDF
    MFE910 Motorola Switchmode Datasheet Scan PDF
    MFE910 Unknown FET Data Book Scan PDF
    MFE910 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MFE910 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MFE910 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MFE910 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MPF910

    Abstract: MFE910 power semiconductor 1973
    Text: I MFE910 MPF910 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR This TMOS FET is designed for high-voltage, high-speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor of UL-to-high voltage interface and high voltage


    Original     		MFE910 MPF910 O-205AD MPF910 MFE910 power semiconductor 1973 PDF

    MPF910

    Abstract: MFE910 7090J
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MPF910/D DATA MPF910 @~~~fn$witching — Enhancement 3 DRAIN I 2 GATE 9 l-SOURCE MMIMUM RATINGS I Rating Symbol 60 VGS *2O *4O VGSM Drain Current - Continuous l – Pulsed(2) Total Device Dissipation


    Original     		MPF910/D MPF910 MPF91O MFE910 OW1-2447 1AOG77 MPF910 MFE910 7090J PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S PDF

    VN5000TNE

    Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
    Text: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15


    Original     		S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM VN130SN3 VN5000TNE IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M PDF

    MPF910

    Abstract: MFE910
    Text: MOTOROLA Order this document by MPF910/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current – Continuous 1


    Original     		MPF910/D MPF910 MFE910 MPF910 MFE910 PDF

    MPF910 equivalent

    Abstract: .model for MPF910 BC237 TRANSISTOR mpf910
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C


    Original     		MPF910 MPF910 MFE910 226AE) Max218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MPF910 equivalent .model for MPF910 BC237 TRANSISTOR mpf910 PDF

    MPF910

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ­ ing applications su c h as line drivers, relay drivers, C M O S logic,


    OCR Scan     		MFE910 MPF910 MPF910 PDF

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


    OCR Scan     		IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022 PDF

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111 PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    mfe9200

    Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
    Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0


    OCR Scan     		1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 PDF

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50 PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    IRF8C30

    Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
    Text: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)


    OCR Scan     		IRFAF50 O-204AA IRFAF52 1RFAG40 RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRF8C30 mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAG50 PDF

    IRF8C30

    Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
    Text: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ


    OCR Scan     		IRFAF50 O-204AA IRFAF52 1RFAG40 RFZ42 O-220AB IRFZ44 MFE910 IRF8C30 MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAG50 IRFBC32 PDF

    2106a

    Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
    Text: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108


    OCR Scan     		2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019 PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF

    MPF910

    Abstract: mfe910
    Text: MPF910 MPF910 CASE 29-05, STYLE 22 TO-92 TO-226AE M A X IM U M RATIN G S Rating Symbol Value U nit VDS 60 Vdc Vg S VGSM ±20 ±40 Vdc Vpk 'D 'd m 0.5 1.0 Ade Total Device Dissipation (a T/^ = 25°C Derate above 25°C MPF910 pd 1.0 8.0 m wrc Total Device Dissipation (a Tç = 25°C


    OCR Scan     		MPF910 MPF910 O-226AE) MFE910 MPF6669 30ICAL PDF