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Microchip Technology Inc 2N6661 MOSFET N-CH 90V 350MA TO39
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DigiKey	2N6661	Bag	510		1	1 $15.9 10 $15.9 100 $15.9 1000 $15.9 10000 $15.9	Buy Now
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Future Electronics	2N6661	Bulk		6 Weeks	500	1 - 10 - 100 - 1000 $14.19 10000 $14.19	Buy Now
Microchip Technology Inc	2N6661	Bag		7 Weeks		1 $15.9 10 $15.9 100 $13.2 1000 $12.13 10000 $11.54	Buy Now
Onlinecomponents.com	2N6661		646			1 $17.76 10 $17.76 100 $13.96 1000 $13.09 10000 $13.09	Buy Now
TME	2N6661				1	1 $17.8 10 $16.5 100 $15.6 1000 $15.6 10000 $15.6	Get Quote
Ameya Holding Limited	2N6661		251			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NAC	2N6661	Bag	1,000		1	1 $16.04 10 $16.04 100 $14.78 1000 $13.7 10000 $13.7	Buy Now
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EBV Elektronik	2N6661			8 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N6661		646			1 $17.76 10 $17.76 100 $13.96 1000 $13.09 10000 $13.09	Buy Now
Vishay Siliconix 2N6661 MOSFET N-CH 90V 860MA TO39
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DigiKey	2N6661	Tube			100	1 - 10 - 100 $30 1000 $30 10000 $30	Buy Now
Bristol Electronics	2N6661		4		1	1 $13.5 10 $13.5 100 $13.5 1000 $13.5 10000 $13.5	Buy Now
Quest Components	2N6661		4			1 $17.6006 10 $16.4273 100 $16.4273 1000 $16.4273 10000 $16.4273	Buy Now
	2N6661		3			1 $18 10 $13.5 100 $13.5 1000 $13.5 10000 $13.5	Buy Now
ComSIT USA	2N6661		99			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ES Components	2N6661		29			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix 2N6661-2 MOSFET N-CH 90V 860MA TO39
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DigiKey	2N6661-2	Tube			20	1 - 10 - 100 $122.5 1000 $122.5 10000 $122.5	Buy Now
Vishay Siliconix 2N6661-E3 MOSFET N-CH 90V 860MA TO39
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DigiKey	2N6661-E3	Tube			100	1 - 10 - 100 $30 1000 $30 10000 $30	Buy Now
Vishay Siliconix 2N6661JTX02 MOSFET N-CH 90V 860MA TO39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6661JTX02	Tube			20	1 - 10 - 100 $381 1000 $381 10000 $381	Buy Now
Bristol Electronics	2N6661JTX02		125			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N6661 Datasheets (46)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6661	Defense Supply Center Columbus	N-Channel FET	Original	PDF
2N6661	Microchip Technology	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 90V 350MA 3TO-39	Original	PDF
2N6661	Motorola	FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor	Original	PDF
2N6661	Unknown	N-channel, High Frequency Power Transistor	Original	PDF
2N6661	Philips Semiconductors	N-Channel Vertical DMOS Transistor	Original	PDF
2N6661	Semelab	N-Channel Enhancement Mode MOS Transistor	Original	PDF
2N6661	Siliconix	N-Channel Enhancement-Mode MOSFET Transistors	Original	PDF
2N6661	Supertex	N-Channel Enhancement-Mode Vertical DMOS FETs	Original	PDF
2N6661	Vishay Telefunken	TRANS MOSFET N-CH 90V 0.9A 3TO-205AD	Original	PDF
2N6661	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N6661	General Electric	Power Transistor Data Book 1985	Scan	PDF
2N6661	Intersil	Data Book 1981	Scan	PDF
2N6661	Motorola	Switchmode Datasheet	Scan	PDF
2N6661	Motorola	European Master Selection Guide 1986	Scan	PDF

2N6661	Motorola	TMOS SWITCHING FET TRANSISTORS	Scan	PDF
2N6661	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6661	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2N6661	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N6661	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6661	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

2N6661 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N6661 Abstract: VN88AFD Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS	Original	2N6661/VN88AFD 2N6661 VN88AFD 08-Apr-05 2N6661 VN88AFD	PDF
TN2524 Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110 Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)	Original	2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS ON = 4.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	2N6661 40mW/ment O-205AD)	PDF
Untitled Abstract: No abstract text available Text: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	2N6661JAN/JANTX/JANTXV 2N6661/VN88AFD VNDQ09 P-37515--Rev. 04-July-94	PDF
Untitled Abstract: No abstract text available Text: 2N6661 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200)	Original	2N6661 O-205AD)	PDF
2N6661 Abstract: No abstract text available Text: SEME 2N6661 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Switching Regulators	Original	2N6661 2N6661	PDF
2N6660 Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711 Text: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh	Original	2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 2N66591MPF6659 2N6660/2N6661 MPF6660/MPF6661 O-205AD MPF6660 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711	PDF
TO-205AD Abstract: 2N6661 VN88AFD Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D	Original	2N6661/VN88AFD 2N6661 VN88AFD 2N6661) P-37655--Rev. 25-Jul-94 TO-205AD 2N6661 VN88AFD	PDF
marking code vishay SILICONIX to-39 Abstract: jantx2n6661 Text: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications	Original	2N6661JAN/JANTX/JANTXV 08-Apr-05 marking code vishay SILICONIX to-39 jantx2n6661	PDF
JANTX2N6661 Abstract: JAN2N6661 JANTXV2N6661 JANTX2N6661 reliability VNDQ09 Text: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications	Original	2N6661JAN/JANTX/JANTXV 2N6661/VN88AFD VNDQ09 S-04279--Rev. 16-Jul-01 JANTX2N6661 JAN2N6661 JANTXV2N6661 JANTX2N6661 reliability VNDQ09	PDF
a0728 Abstract: No abstract text available Text: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	2N6661 2N6661 DSPD-3TO39N2, A070808. DSFP-2N6661 A072808 a0728	PDF
Untitled Abstract: No abstract text available Text: 2N6661CSM4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 90V ID 0.9A RDS on 4.0 Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003)	Original	2N6661CSM4 MO-041BA)	PDF
2N6661 Abstract: 9006 LE17 Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A • VDSS = 90V , ID = 1.0A, RDS ON = 4.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available	Original	2N6661M1A O-257AA O-257AA 2N6661 9006 LE17	PDF
2N6660 Abstract: 2N6661 Text: 2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A 2N6660 90V 4.0Ω 1.5A 2N6661 TO-39 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process	Original	2N6660 2N6661 2N6660 2N6661	PDF

2N6661 Abstract: No abstract text available Text: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics	Original	2N6661 2N6661 com/2n6661	PDF
2N6661 Abstract: No abstract text available Text: 2N6661 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 90V ID 0.9A RDS on 4.0Ω Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)	Original	2N6661 2N6661	PDF
Untitled Abstract: No abstract text available Text: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)	OCR Scan	2N6661 O-205AD) MIL-S-19500/547A.	PDF
2N6661 Abstract: 2N6660 2N6661 transistor 2N6659 max 1988 Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.	OCR Scan	2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988	PDF
2N6155 Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64 Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64	PDF
4900 SIEMENS Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A	PDF
Untitled Abstract: No abstract text available Text: T em ic 2N6661JAN/JANTX/JANTXV_sm^ix N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS M in (V) r DS(on) M ax (Q ) V GS(Ui) (V ) Id (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits • • • • • • • • • •	OCR Scan	2N6661JAN/JANTX/JANTXV_ -205A P-37515-- 6661/V	PDF
2N6661 Abstract: VN88AFD Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V (B R )D SS M i n 0 0 2N6661 90 4 @ V GS= 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 1 0 V 0.8 to 2.5 1.29 ro s ( o n ) Max (fì) V G S (th ) b (A) (V) FEATURES	OCR Scan	2N6661/VN88AFD 2N6661 VN88AFD S-04279-- 16-Jul-01 2N6661)	PDF
Untitled Abstract: No abstract text available Text: 2N6660 2N6661 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON I d (ON) b v dgs (max) (min) TO-39 60V 3 .0 ÌÌ 1.5A 2N 6660 90V 4 .0 ÌÌ 1.5A 2N6661 Advanced DMOS Technology High Reliability Devices	OCR Scan	2N6660 2N6661	PDF
2N6660 Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor Text: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.	OCR Scan	2N6659 2N6660 2N6661 N6660 2N6661 bbS3T31 D03b22S 2N6660 2N6659 TP 1322 2N6661 transistor	PDF

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2N6661 Datasheets (46)

2N6661 Datasheets Context Search

2N6661

TN2524

Untitled

Untitled

Untitled

2N6661

2N6660

TO-205AD

marking code vishay SILICONIX to-39

JANTX2N6661

a0728

Untitled

2N6661

2N6660

2N6661

2N6661

Untitled

2N6661

2N6155

4900 SIEMENS

Untitled

2N6661

Untitled

2N6660