SVC303
Abstract: No abstract text available
Text: SVC303Y Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600n C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage9.0 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleTO-218var
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SVC303Y
StyleTO-218var
SVC303
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bot64
Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091
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MJE1091
MJE2090
MJE2091
BOW64A
BOW24A
220AB
bot64
B0698
BOW84
B064S
BOW94A
bot62
2ns04
BOX54A
11J2
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T3S600MPC
Abstract: TXN60B 2N3759 TAG 600 TMS007
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 SF5J42 5PSSM 5PSSMA SK3042 DRA5G S5BOOM TYFSOOBA 5PSM 5PSM CTOBG g~~~~12 15 20 25 30 35 40 CR5AS12 SF5J41 SF5J41 S2700M MCR729•B 2N415B 2N41SS 2N41B2 2N419B 2N4202 SOB02MH SOB05MH SOB07MH FOB10MH SOB10MH
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SF5J42
SK3042
CR5AS12
SF5J41
S2700M
MCR729
2N415B
2N41SS
2N41B2
T3S600MPC
TXN60B
2N3759
TAG 600
TMS007
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SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
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O-220AB
O-218
O-204
204AC
O-238AA
SIEMENS 800
950p to-247 package
MTH6N85
2SK351
IRFAF30
21n60n
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KT704
Abstract: MJ8501 2S0200 BU205 HITACHI 2sc935 MJE132 KT704A MJE1320 TIPL770 PT8851A
Text: POWER SILICON NPN Item Number Part Number >= I C 20 PT8851A MRF262 S01014•6 2N6081 MRF433 NA41UX NA41UG NA41UH ~~:~~r 25 30 2N6198 2N6198 2N6198 2S01077 2N2339 2N1701 2N6391 2N6391 ~~~J85 35 40 BLY15 BOY16 BOY16 MM3006 MM3007 2N4272 2N4273 2N6477 ~~~~~5
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SMl801
KSC2233
BlW98
B0933F
SFT8500
MJE1320
BOY15
B0106
B0107
KT704
MJ8501
2S0200
BU205 HITACHI
2sc935
MJE132
KT704A
TIPL770
PT8851A
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2sc1403 sanken
Abstract: MJ3247 B0537 2sc2579 2SC1403A 2SC2261 SANKEN BOX53F mj04 B0543C MJ-4248
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 95 932 Y(BR)CEO fT hFE Min NthAmerSemi See Index PhihpsElec NthAmerSemi AmperexElec See Index NthAmerSemi Sanken Elec NthAmerSemi TexslnstLtd t 8.0 8.0 8.0 8.0 8.0 8.0
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2N6928
TE13006
2N6671
2N6738
2N6307
BUS22
BUP22
BUX18B
2sc1403 sanken
MJ3247
B0537
2sc2579
2SC1403A
2SC2261 SANKEN
BOX53F
mj04
B0543C
MJ-4248
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IRF0120
Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)
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IXTH67N08
IXTM67N08
IXTH75N08
IXTM75N08
MTE75N08
VN0109N9
BS170F
VN0109N3
VN0109N2
IRF0120
VN0109N5
VN99AK
IRF012
IRF0122
VN98AK
svn98ak
VN-99-A
VN98AJ
k604
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tip340
Abstract: 2sb705 nec BUW23 2sA747A sanken 2SA747A BUW32A B0246C 2SB705 BOX20 2SA747 sanken
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 2SA747 2SA747 2SA878 2SA1067 2SA1040 TIP340 2SA1072 2SA1077 2~1:J10;j2K 55 60 2SB955K 2SA1007 2SA1232R 2SA1232Q 2SA1232P 2N6231 BOX20 BOX20 2SA747A ~~p~~1U6 65 70 2SB705 2SB863 2SA1265
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204AA
BUW32
2SC2818
SM216S
B0287
218var
tip340
2sb705 nec
BUW23
2sA747A sanken
2SA747A
BUW32A
B0246C
2SB705
BOX20
2SA747 sanken
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2N4319
Abstract: ST SEMICON INC aeg diode Sid 20 l 2N4205 2N4193 2N4166 2N4177 2N3759 TAG 600 2N4180
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755
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2N3669
2N3670
2N3679
2N3753
2N3754
2N3755
2N3756
2N3757
2N3758
2N3759
2N4319
ST SEMICON INC
aeg diode Sid 20 l
2N4205
2N4193
2N4166
2N4177
TAG 600
2N4180
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2sd898 hitachi
Abstract: KT816A 2SC2906A BUV36 2SD90 BUV36A 2n6095 2N5700 MJE8500 THB13
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Max (A) (V) ON) PD hFE Min *T (HZ) r 'CBO Max (A) Max (s) (CE)ut Max (Ohms) Top«r Max Package Style (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . -15 . .
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SDT801
SDT701
2SC3178
2SC3059
MJE1320
BUV36A
2SD1301
2SD897A
2sd898 hitachi
KT816A
2SC2906A
BUV36
2SD90
2n6095
2N5700
MJE8500
THB13
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BU1040
Abstract: ir431 IR430 2SC1865 IR423 BU104 2sc1865 nec ir411 RCA1B09 RCA410
Text: POWER SILICON NPN Item Number Part Number I C • 5 10 20 2S0917 SOT31303 2N6510 BU406 2SC3591 RCA1B04 2SC3175 2SC3176 BUY18S lR4TO" 25 30 35 · 40 45 50 55 60 65 70 75 · 80 RCA410 SML31305 SOT31305 2N6511 B0550B 2SC1864 2SC1867 RCA1B05 BUX62 SK3217 RCA1B09
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-f40J
BU1040
ir431
IR430
2SC1865
IR423
BU104
2sc1865 nec
ir411
RCA1B09
RCA410
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GE C20B
Abstract: S1207BH S200BR S200Bl MCR21B BP2M SK3577 C20B BTY79-200R 2N3755
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 S2006FS21 S2006LS2 S2006FS31 S2006LS3 S2006Fl S2006L S1007BJ S1010BJ BTY79-200R S1005BH ~~~~~~~ 15 20 2N616B HSE5054 HS27 SK3577 T7F200CRC T7F200URC 2N3937 Cl0B g~~~ 25 30 C20B C22B TM2007
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S2006FS21
S2006LS2
S2006FS31
S2006LS3
S2006Fl
S2006L
S1007BJ
S1010BJ
BTY79-200R
S1005BH
GE C20B
S1207BH
S200BR
S200Bl
MCR21B
BP2M
SK3577
C20B
2N3755
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2SC3883
Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812
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2S01398
2S01402
2S01651
2S01655
2SC2791
2SC2793
2SC3214
2S01185
2S01186
OT723
2SC3883
2N2250
S2000A
2N2222B
2N2244
STi-812
MRF239
2N2362
STI-801
2N2245
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2SB1100K
Abstract: 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) PD hFE Max ON) Min Max tT 'CBO tr Max Max (HZ) (A) (8) r (CE)sat 'Oper Max (Ohms) Max (°C) Package Style Darlington Transistors, PNP (Cont'd) . . . .5 -10 . . .15 . . . .
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2N6053
PMD13K60
MJ920
2SB872A
2SB939A
2SB951A
BDX54B
BD266A
2SB1100K
2SB638H
2SB1147
2SB1100M
2SB1099
2SB711
PMD13K100
2SB1099L
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PTC160
Abstract: 2S8857 045C8 2sa768 sanken 2s87 SU44 2N6021
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 2S8986S 2S8986T 2S8986U 80X14 80X14 NKT4054 2N6049 80440 2N5194 2N6125 80536 80588 045C7 MJE235 2N6025 2N6026 MJ491 2S8566AK 2~I:S'tj2 35 40 2S8930 2S8942 80190 80274 2SA489 2S8509 2SA768 045C8
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80Y83
CX754
MH0870
M0870
2S8566K
2S8857
2S8858
PTC160
045C8
2sa768 sanken
2s87
SU44
2N6021
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b0745
Abstract: 2n3772 solitron rcs258 BDX40 MRF428A RCS25 MRF422 2SD1213R
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 163-04A 163-04SPC 2N6257 163•04 163-04 MJ6257 1723-0405 1723-0410 ~~b~~14 25 30 164-04A 164-04SPC 164-04 164-04 ST28138 SDT3201 SDT44331 SDT44331 ~~~J~r 35 40 80745 B0745 BD745 2N1823 2N1823 2N1823 2N2123
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SDT8045
J02053
8UP30
2SD1213Q
2SD1213R
2SC2510
SD1450
MRF422
b0745
2n3772 solitron
rcs258
BDX40
MRF428A
RCS25
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