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    2N540 Price and Stock

    onsemi 2N5401YBU

    TRANS PNP 150V 0.6A TO92-3
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    DigiKey 2N5401YBU Bulk 52,077 1
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    Mouser Electronics 2N5401YBU 9,990
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    Rochester Electronics 2N5401YBU 103,460 1
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    onsemi 2N5401YTA

    TRANS PNP 150V 0.6A TO92-3
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    DigiKey 2N5401YTA Cut Tape 9,757 1
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    2N5401YTA Ammo Pack 6,000 2,000
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    Diotec Semiconductor AG 2N5401

    BJT TO-92 150V 600MA PNP 0.625W
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    DigiKey 2N5401 Cut Tape 3,357 1
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    Mouser Electronics 2N5401 4,257
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    Onlinecomponents.com 2N5401 51,210
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    TME 2N5401 6,600 25
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    Harwin M83-LFT1F2N54-0000-000

    CONN RCPT 54POS 0.079 GOLD PCB
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    DigiKey M83-LFT1F2N54-0000-000 Tray 50 1
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    Newark M83-LFT1F2N54-0000-000 Bulk 90
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    Avnet Abacus M83-LFT1F2N54-0000-000 13 Weeks 90
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    Central Semiconductor Corp CP736V-2N5401-CT20

    TRANS PNP 150V 0.6A DIE 1=20PCS
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    DigiKey CP736V-2N5401-CT20 Tray 4 1
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    Avnet Americas CP736V-2N5401-CT20 Waffle Pack 20
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    2N540 Datasheets (341)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N540 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N540 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N540 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N540 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N540 Unknown Vintage Transistor Datasheets Scan PDF
    2N540 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N540 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N540 Unknown GE Transistor Specifications Scan PDF
    2N540 Semitron Germanium Power Transistors Scan PDF
    2N540 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N540 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N5400 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
    2N5400 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    2N5400 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    2N5400 Korea Electronics High Voltage Transistor Original PDF
    2N5400 ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS SS PNP 120V 600MA TO-92 Original PDF
    2N5400 On Semiconductor Amplifier Transistor PNP Original PDF
    2N5400 Philips Semiconductors Small-signal Transistors Original PDF
    2N5400 Boca Semiconductor Amplifier Transistor PNP Silicon Scan PDF
    2N5400 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    ...

    2N540 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5401G

    Abstract: No abstract text available
    Text: 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage


    Original
    2N5401 2N5401/D 2N5401G PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5404 2N5405 2N5406 2N5407 SMALL SIGNAL PNP TRANSISTORS IN TO-5 MECHANICAL DATA Dimensions in mm 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 38.1 (1.500) min. 0.89 max. (0.035) APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. Small signal PNP transistors for relay


    Original
    2N5404 2N5405 2N5406 2N5407 1N5407 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE


    Original
    2N5401 -150V 625mW QW-R201-001 PDF

    diode 2N5401

    Abstract: 2N5401 2n5401 148
    Text: DC COMPONENTS CO., LTD. 2N5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ


    Original
    2N5401 -10mA, -50mA, 100MHz diode 2N5401 2N5401 2n5401 148 PDF

    2N5401

    Abstract: transistor 2N5401 1N914 2N5400
    Text: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO


    Original
    2N5401* 2N5400 2N5401 226AA) r14525 2N5401/D 2N5401 transistor 2N5401 1N914 2N5400 PDF

    2N5401UB06

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original
    2N5401HR 2N5401HR 2N5401UB06 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 S/S TR CD-ROM Edition.1.1 This Data Sheet is subject to change without notice. Page : 1 (2N5400) (C) 1994 Samsung Electronics Printed in Korea.


    Original
    2N5400 2N5400) PDF

    transistor 2N5401

    Abstract: 2N5401 2N5551 CMLT5554
    Text: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process


    Original
    CMLT5554 2N5551 2N5401 OT-563 100MHz 20-January transistor 2N5401 CMLT5554 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N5401 HDWXUHV z z • PNP Silicon Through Hole Package 150oC Junction Temperature Case Material: Molded Plastic. UL Flammability


    Original
    2N5401 625mW 150oC PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=-130V, VCEO=-120V H ・Low Leakage Current. 1 : ICBO=-100nA Max. @VCB=-100V


    Original
    2N5400S -100nA -100V -50mA, -130V, -120V -100V, -10mA -50mA PDF

    2N5401

    Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
    Text: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original
    2N5400 2N5401 2N5550 2N5551 2N5400 2N5401 transistor 2N5401 st2n5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V N E K Low Leakage Current. G D J : ICBO=-100nA Max. @VCB=-100V


    Original
    2N5400 -130V, -120V -100nA -100V -50mA, -100V, -10mA -50mA PDF

    2n5401 smd

    Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■


    Original
    2N5401HR 2N5401HR 2n5401 smd 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES PDF

    transistor 2n5401

    Abstract: transistor 2N5401L 2n5401l 2N5401 2n5401 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number


    Original
    2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K transistor 2n5401 transistor 2N5401L 2n5401l 2N5401 2n5401 transistor PDF

    2N5401

    Abstract: 2N5400 10D3 2N5550 2N5551
    Text: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original
    2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551 2N5401 10D3 2N5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K Low Leakage Current. G D J : ICBO=-50nA Max. @VCB=-120V


    Original
    2N5401C -160V, -150V -50nA -120V -50mA, -10mA, 100MHz PDF

    2N5404

    Abstract: No abstract text available
    Text: 2N5404 2N5405 2N5406 2N5407 MECHANICAL DATA Dimensions in mm SMALL SIGNAL PNP TRANSISTORS IN TO-5 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. Small signal PNP transistors for relay


    Original
    2N5404 2N5405 2N5406 2N5407 2N5407" 2N5407 2N5407X 40MHz PDF

    transistor 2n5401

    Abstract: 2N5401
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9SA TO- 92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.


    Original
    2N5401 25deg C-120 transistor 2n5401 2N5401 PDF

    2N5401

    Abstract: No abstract text available
    Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V


    OCR Scan
    2N5401 -160V, 5-50nA -50mA, -10mA 100MHz 10Hz-15 2N5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan
    2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550, PDF

    2N5400

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5400 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCbo=-130V, VCeo=-120V • Low Leakage Current. : IcBo=-100nA Max. @VCB=-100V • Low Saturation Voltage


    OCR Scan
    2N5400 -130V, -120V -100V -50mA, -10JUA, -10mA -50mA -10mA, 2N5400 PDF

    2N5401

    Abstract: N5400 2N5400 MOTOROLA 2N5400
    Text: Am plifier T ra n sisto rs 2N 5400 2N 5401* PNP Silicon "M otorola P referre d D evice COLLECTOR 3 Boca Semiconductor Corp. BSC 2 BASE 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N5400 2N5401 Unit VCEO 120 150 Vdc C o lle c to r-B a s e Voltage


    OCR Scan
    N5400 2N5401* 2N5400 2N5401 O-226AA) 2N5400 MOTOROLA PDF

    2N5400

    Abstract: 2n5401
    Text: 2N5400 2N5401* M AXIMUM RATINGS Rating Sym bol 2N5400 2N5401 Unit Collector-Emitter Voltage VcEO -1 2 0 -1 5 0 Vdc C ollector-Base Voltage v CBO - 130 -1 6 0 Vdc Emitter-Base Voltage VEBO -5 .0 Vdc Collector Current — C o ntin uou s 'c -6 0 0 m A dc Total Device Dissipation


    OCR Scan
    2N5400 2N5401* 2N5401 O-226AA) 2N5400, 2N5401 PDF

    2N5550 EBC

    Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
    Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan
    2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400 PDF