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STMicroelectronics 2N5401UB1 Transistor GP BJT PNP 150V 0.5A 4-Pin Case UB Waffle - Bulk (Alt: 2N5401UB1)
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2N5401UB1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5401UB06 Abstract: No abstract text available Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics	Original	PDF	2N5401HR 2N5401HR 2N5401UB06
2n5401 smd Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■	Original	PDF	2N5401HR 2N5401HR 2n5401 smd 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
2n5551 smd Abstract: 2N5551HR Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	PDF	2N5551HR 2N5551HR 2n5551 smd
JANSR2N5401UB Abstract: 2N5401UB06 J2N5401UB1 Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate	Original	PDF	2N5401HR 2N5401HR MIL-PRF19500 DocID16934 JANSR2N5401UB 2N5401UB06 J2N5401UB1
2N5551UB Abstract: package LCC-3 Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL	Original	PDF	2N5551HR 2N5551HR 2N5551UB package LCC-3
2N5401HR Abstract: No abstract text available Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics	Original	PDF	2N5401HR 2N5401HR
Untitled Abstract: No abstract text available Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate	Original	PDF	2N5401HR 2N5401HR MIL-PRF19500 DocID16934
2N5401UB1 Abstract: No abstract text available Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■	Original	PDF	2N5401HR 2N5401HR 2N5401UB1
2N5551UB Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1 Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	PDF	2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
Untitled Abstract: No abstract text available Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	PDF	2N5551HR 2N5551HR