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    2N5881 Search Results

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    2N5881 Price and Stock

    Microchip Technology Inc 2N5881

    TRANS NPN 60V 15A
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    DigiKey 2N5881 Bulk 100
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    Avnet Americas 2N5881 Bulk 36 Weeks 100
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    Mouser Electronics 2N5881
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    Microchip Technology Inc 2N5881 1
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    Onlinecomponents.com 2N5881
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    NAC 2N5881 Tray 7
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    Master Electronics 2N5881
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    Motorola Semiconductor Products 2N5881

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    Bristol Electronics 2N5881 73
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    Quest Components 2N5881 254
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    2N5881 19
    • 1 $9
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    2N5881 6
    • 1 $3.6
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    • 1 $13.65
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    Component Electronics, Inc 2N5881 2
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    Motorola Mobility LLC 2N5881

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    Bristol Electronics 2N5881 24 1
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    SSI 2N5881

    Bipolar Junction Transistor, NPN Type, TO-3
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    Quest Components 2N5881 283
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    GTCAP 2N5881

    Bipolar Junction Transistor, NPN Type, TO-3
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    Quest Components 2N5881 159
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    Find more 2N5881 price and stock on Findchips.com

    2N5881 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5881 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160 Original PDF
    2N5881 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5881 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF
    2N5881 API Electronics Short form transistor data Short Form PDF
    2N5881 API Electronics Short form transistor data Short Form PDF
    2N5881 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160 Scan PDF
    2N5881 Central Semiconductor Complementary Silicon Power Transistors, TO-3 Scan PDF
    2N5881 Diode Transistor Transistor Short Form Data Scan PDF
    2N5881 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5881 General Transistor Power Transistor Selection Guide Scan PDF
    2N5881 Mospec POWER TRANSISTORS(15A,160W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160 Scan PDF
    2N5881 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5881 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5881 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5881 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5881 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5881 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5881 Unknown Cross Reference Datasheet Scan PDF
    2N5881 Unknown Transistor Replacements Scan PDF
    2N5881 Unknown Transistor Replacements Scan PDF

    2N5881 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5881

    Abstract: 2N5882 2N5879 2N5880
    Text: Inchange Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880

    2N5881

    Abstract: No abstract text available
    Text: 2N5881 60 V - Complementary NPN Selicon High-power Transistor 4.25. 1 of 2 Home Part Number: 2N5881 Online Store 2N5881 Diodes 6 0 V - C o m plem ent ary NPN Selic o n High- po w er Trans is to r Transistors


    Original     		PDF 2N5881 com/2n5881 2N5881

    2N5881

    Abstract: No abstract text available
    Text: 2N5881 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5881 O204AA) 16-Jul-02 2N5881

    Untitled

    Abstract: No abstract text available
    Text: 2N5881 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5881 O204AA) 18-Jun-02

    2N5882

    Abstract: 2N5881 2N5879 2N5880
    Text: SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880

    2N5879

    Abstract: 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825
    Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF 2N5879/D 2N5879 2N5880* 2N5881 2N5882* 2N5879, 2N5880, 2N5882 2N5879/D* 2N5879 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825

    Untitled

    Abstract: No abstract text available
    Text: 2N5881 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15


    Original     		PDF 2N5881 time700n

    2N5879

    Abstract: 2N5880 2N5881 2N5882
    Text: SavantIC Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5881 2N5882 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882

    2N5879

    Abstract: 2N5880 2N5882 2N5881
    Text: Inchange Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882

    2N5881

    Abstract: 2N5882 2N5879 2N5880
    Text: Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880

    MJE34 equivalent

    Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881


    Original     		PDF 2N5879, 2N5881 2N5880, 2N5882 2N5879 2N5880* 2N5882* TIP73B TIP74 MJE34 equivalent BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100

    2N5881

    Abstract: 15A100
    Text: 2N5881 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5881 O204AA) 31-Jul-02 2N5881 15A100

    Untitled

    Abstract: No abstract text available
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


    OCR Scan     		PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412

    2N5881

    Abstract: 2N5882 2NS882
    Text: tz.li S O L I T R O N D E V I C E S INC DE 1fl3t,flbDa 0 0 0 1 3 S 1 5 1 ~ 2N5881 2N5882 8368602 SOLITRON D EVICES t' « INC . v * UPU SILICON POWER TRANSISTORS HIGH POWER 15 AMPERES FEATURES: EPI-BA SE CONSTRUCTION F A S T SWITCHING HIGH R E L IA B IL IT Y


    OCR Scan     		PDF 2N5881 2N5882 2N5881 100KHZ 2N5882 2NS882

    Jan2N3055

    Abstract: No abstract text available
    Text: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100


    OCR Scan     		PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 Jan2N3055

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N5880

    Abstract: 2N5882 2N5879 2N5881 Scans-00155740
    Text: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: NPN 2N5881 2N5882 PNP 2N5879 2N5880 _ Boca Semiconductor Corp. BSC http ://www.bocasemi.com * Low Collector-Emitter Saturation Voltage v c e | s a t = 1-0V Max.)@lc=7.0A


    OCR Scan     		PDF 2N5879 2N5881 2N5880 2N5882 2N5881 2N5882 Scans-00155740

    2N5879

    Abstract: 2N5880 2N5882 2N5881 complimentary 400 w
    Text: Datasheet Central 2N5879 2N5881 Sem iconductor Corp. 2N5880 2N5882 PNP NPN COMPLIMENTARY SILICON POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N5879 2N5880 2N5881 2N5882 2N5879, 200mA 100kHz 2N5879 complimentary 400 w

    terminals of 2n3055

    Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


    OCR Scan     		PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 terminals of 2n3055 2N4211 TO111 package 2N5882

    2N5882

    Abstract: N5 npn transistor 2N5880 2N5879
    Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 58 79 Com plem entary Silicon H igh-Pow er Transistors 2N 5880* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N5881 C ollector-Em itter Sustaining Voltage —


    OCR Scan     		PDF 2N5879/D 2N5879, 2N5881 2N5880, 2N5882 2N5881 O-204AA N5 npn transistor 2N5880 2N5879

    2NS880

    Abstract: 2N6878 2N5880 2n5879 power amplifier circuit 2N5879 2N5882 2n5881 2N5880 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N 5879 Com plem entary Silicon High-Pow er TVansistors 2N 5880* NPN . . . designed for general-purpose power amplifier and switching applications. 2N5881 • Collector-Emitter Sustaining Voltage — VCEO sus - 60 Vdc (Min) — 2N5879,2N5881


    OCR Scan     		PDF 2N5879 2N5881 2N5880 2N5882 2N6878 2N5881 2NS880 2N5B82 2n5879 power amplifier circuit 2N5882 2N5880 motorola

    2N5880

    Abstract: 2N5882 2N5879 2N5881 S200 TRANSISTOR TC 100
    Text: 2N5879, 2N5880 PNP I 2N5881, 2N5882 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5879, 2N5881 2N5880, 2N5882


    OCR Scan     		PDF 2N5879, 2N5880 2N5881, 2N5882 2N5881 2N5880, 2N5882 2N5881 2N5879 S200 TRANSISTOR TC 100

    Untitled

    Abstract: No abstract text available
    Text: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3


    OCR Scan     		PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412

    2N5881

    Abstract: 2n5882
    Text: TYPES 2N5881, 2N5882 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 160 Watts at 2 5 °C Case Temperature • 15-A Rated Continuous Collector Current • Min f r of 4 MHz at 10 V , 1 A • 90-mJ Reverse Energy Rating TYPES 2N5881, 2N5882 BULLETIN NO. DL-S 7111625, DECEMBER


    OCR Scan     		PDF 2N5881, 2N5882 2N5880 90-mJ 2NS881 2N5881