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    2N5301 Price and Stock

    Microchip Technology Inc 2N5301

    NPN TRANSISTOR
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    Central Semiconductor Corp 2N5301 PBFREE

    TRANS NPN 40V 30A TO3
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    NTE Electronics Inc 2N5301

    Transistor Npn Silicon Bvceo=40V Ic=30A To-3 Case For Use In Power Amplifier And Swtiching |Nte Electronics 2N5301
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    SPC Multicomp 2N5301

    Bipolar Transistor, Npn, 40V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:30A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Multicomp 2N5301
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    Motorola Semiconductor Products 2N5301

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    2N5301 31
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    2N5301 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5301 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40V 30A TO-3 Original PDF
    2N5301 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5301 On Semiconductor High-Power NPN Silicon Transistor Original PDF
    2N5301 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5301 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5301 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N5301 Diode Transistor Transistor Short Form Data Scan PDF
    2N5301 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N5301 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5301 General Diode Transistor Selection Guide Scan PDF
    2N5301 General Electric High current, high power, high speed N-P-N power transistor. 40V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5301 General Transistor Power Transistor Selection Guide Scan PDF
    2N5301 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5301 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5301 Motorola The European Selection Data Book 1976 Scan PDF
    2N5301 Motorola European Master Selection Guide 1986 Scan PDF
    2N5301 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5301 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5301 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5301 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N5301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5301

    Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS


    Original     		PDF 2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745

    Untitled

    Abstract: No abstract text available
    Text: 2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise.


    Original     		PDF 2N5301 LF5301 PF5301 2N5301 LF5301Â PF5301Â

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


    Original     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745

    2N4398

    Abstract: 2N5745 4399 2N4399 2n5301
    Text: Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


    Original     		PDF 2N4398 2N4399 2N5745 2N5301/5302/5303 2N4398 2N4399 2N5745 4399 2n5301

    2N5301

    Abstract: No abstract text available
    Text: 2N5301 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5301 O204AA) 31-Jul-02 2N5301

    2N5301

    Abstract: 2N5302 2N5303 2n53
    Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching


    Original     		PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		PDF LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel

    Untitled

    Abstract: No abstract text available
    Text: 2N5301 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5301 O204AA) 16-Jul-02

    T25M40

    Abstract: SKC25B75 SEMIKRON book ibm ppc 440
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 •30 >= 20 A, Semikron Semikron ~~~~~8(p.) ~~nyo ~~ect BUV51 (A) BUW51 (A) BUW1B BUW1B BUW19 2N3771 1561·040B 1561·040B 1061-041U 1561-0410 MJ3771 2N5301 BOX41 2N2757 2N2763 2N2769 2N2775 5250·50


    Original     		PDF SKC25B75 SKC25K75 T25M40 GSRU20040 2SC2903 2SC30B5 SKC25KB5 2SC3455 2SC39BB SEMIKRON book ibm ppc 440

    2N5301

    Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
    Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


    Original     		PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange

    LF5301

    Abstract: No abstract text available
    Text: 2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise.


    Original     		PDF 2N5301 LF5301 PF5301 LF5301

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    2N3713

    Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
    Text: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914


    OCR Scan     		PDF 2N5067 2N4901 2N4904 2N4398 2N4902 2N4905 2N3789 2N3791 2N4399 2N4903 2N3713 2n3055 complement 2N5068 2N3055 2N3714 2N3790

    2N5302

    Abstract: No abstract text available
    Text: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­


    OCR Scan     		PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5745 2N5301/2/3-2N4398/99-2N5745 GQS1334

    2N5302

    Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
    Text: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302


    OCR Scan     		PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303

    2n5302

    Abstract: 2n5301 2n5303 200WATT TRANSISTOR 2n5302
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON


    OCR Scan     		PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2n5302 2n5301 2n5303 200WATT TRANSISTOR 2n5302

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N5303

    Abstract: 2N5301 2N5302 2N4398 2N4399 2N5745 2N5301-3 n439
    Text: D Q 5 ' ì 3 S tl S C S -T H O M S O N [ « ^ E lE O i r i ® i a O i S 6 S- THOMSON 1 • 2 N 5 3 0 1 /0 2 /0 3 2 N 4 3 9 8 /9 9 /5 7 4 5 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­


    OCR Scan     		PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5303 2N4398 2N4399 2N5301-3 n439

    2N5301

    Abstract: 2N5302 2N5303 RCA-2N5301
    Text: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301

    2n5302

    Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)


    OCR Scan     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp

    2N4398

    Abstract: 2n4399 4398m
    Text: TYPES 2N4398, 2N4399 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS CD H F O R P O W ER -A M P LIFIER AND HIGH -SPEED -SW ITCHING A P P LIC A T IO N S D ES IG N ED FO R C O M P LE M EN T A R Y USE WITH 2N5301, 2N5302 c < r "D r m m H to • 200 Watts at 25° C Case Temperature


    OCR Scan     		PDF 2N4398, 2N4399 2N5301, 2N5302 2N4398 4398m

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


    OCR Scan     		PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    fu 5303

    Abstract: 4410b
    Text: File Num ber 2N5301, 2N5302, 2N5303 1029 High-Current High-Power High-Speed N-P-N Power T ransistors TERMINAL DESIGNATIONS Feature«: • Specification tor h rE and VcE sat up to 30 A ■ Current gain-bandwidth pro d u ct h = 2 MHz min. at 1 A ■ Low saturation voltage with high beta


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 O-204AA 2N5302 2N5303 fu 5303 4410b