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Microchip Technology Inc 2N6660 MOSFET N-CH 60V 410MA TO39
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Future Electronics	2N6660	Bulk	217	6 Weeks	1	1 $14.45 10 $14.27 100 $13.76 1000 $13.76 10000 $13.76	Buy Now
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NAC	2N6660	Bag			500	1 $16.04 10 $16.04 100 $14.78 1000 $13.7 10000 $13.7	Buy Now
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Master Electronics	2N6660		559			1 $17.1 10 $17.1 100 $13.63 1000 $12.83 10000 $12.83	Buy Now
Vishay Siliconix 2N6660 MOSFET N-CH 60V 990MA TO205AD
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Vishay Siliconix 2N6660-2 MOSFET N-CH 60V 990MA TO205AD
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Vishay Siliconix 2N6660-E3 MOSFET N-CH 60V 990MA TO205AD
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Vishay Siliconix 2N6660JTX02 MOSFET N-CH 60V 990MA TO205AD
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2N6660 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6660	Defense Supply Center Columbus	N-Channel FET	Original	PDF
2N6660	Microchip Technology	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 0.41A TO39-3	Original	PDF
2N6660	Motorola	FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor	Original	PDF
2N6660	Unknown	N-channel, High Frequency Power Transistor	Original	PDF
2N6660	Philips Semiconductors	N-Channel Vertical DMOS Transistor	Original	PDF
2N6660	Supertex	Metal oxide N-channel FET, Enhancement Type	Original	PDF
2N6660	Supertex	N-Channel Enhancement-Mode Vertical DMOS FETs	Original	PDF
2N6660	Vishay Siliconix	N-Channel Enhancement-Mode MOSFET Transistors	Original	PDF
2N6660	Vishay Telefunken	TRANS MOSFET N-CH 60V 1.1A 3TO-205AD	Original	PDF
2N6660	General Electric	Power Transistor Data Book 1985	Scan	PDF
2N6660	Intersil	Data Book 1981	Scan	PDF
2N6660	Motorola	Switchmode Datasheet	Scan	PDF
2N6660	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6660	Motorola	TMOS SWITCHING FET TRANSISTORS	Scan	PDF

2N6660	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6660	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2N6660	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N6660	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6660	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6660	Unknown	FET Data Book	Scan	PDF

2N6660 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N6660 JANTX Abstract: No abstract text available Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 2N6660 JANTX	PDF
2N6660 Abstract: No abstract text available Text: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	2N6660 2N6660 DSPD-3TO39N2, A070808. DSFP-2N6660 A072808	PDF
TN2524 Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110 Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)	Original	2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110	PDF
2N6660 Abstract: LE17 Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	2N6660 725mW 25ent O-205AD) 2N6660 LE17	PDF
2N6660CSM4 Abstract: No abstract text available Text: 2N6660CSM4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)	Original	2N6660CSM4 MO-041BA) 2N6660CSM4	PDF
Untitled Abstract: No abstract text available Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	2N6660 40mW/ment O-205AD)	PDF
2N6660 Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711 Text: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh	Original	2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 2N66591MPF6659 2N6660/2N6661 MPF6660/MPF6661 O-205AD MPF6660 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711	PDF
Untitled Abstract: No abstract text available Text: 2N6660+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.25 Minimum Operating Temp (øC)	Original	2N6660	PDF
Untitled Abstract: No abstract text available Text: 2N6660+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.25 Minimum Operating Temp (øC)	Original	2N6660	PDF
2N6660X Abstract: No abstract text available Text: 2N6660X MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES • Switching Regulators 0.89 max. (0.035) • Converters	Original	2N6660X 2N6660X	PDF
2N6660 Abstract: 2N6660-1 Text: 2N6660 Die Speciﬁcation Pad Layout 1 0,0 2 Backside: Drain Die Speciﬁcations Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain	Original	2N6660 2N6660 A022009 2N6660-1	PDF
2n6660 Abstract: No abstract text available Text: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	2N6660 2N6660 DSFP-2N6660 A101207	PDF
Untitled Abstract: No abstract text available Text: 2N6660CSM4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.0A RDS on 3.0 Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 3 4 1.02 ± 0.20 (0.04 ± 0.008) 2 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009)	Original	2N6660CSM4 MO-041BA)	PDF

2N6660 Abstract: s0437 2N6660 siliconix VQ1004J Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5	OCR Scan	2N6660, VQ1004J/P 2N6660 VQ1004J/P S-04379-- 16-Jul-01 s0437 2N6660 siliconix VQ1004J	PDF
2N6661 Abstract: 2N6660 2N6661 transistor 2N6659 max 1988 Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.	OCR Scan	2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988	PDF
2N6155 Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64 Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64	PDF
4900 SIEMENS Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A	PDF
Untitled Abstract: No abstract text available Text: m 2N6660 \ \ MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS A @ Tc = 25 °C 800 m A @ T c = 100 °C VDs= 60 V VGS = ±20 V 6.25 W @ 25 °C 2.5 W @ 100 °C	OCR Scan	2N6660 2N6660	PDF
2N6660 Abstract: No abstract text available Text: 2N6660 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor TO-39 TO-205AD PRODUCT SUMMARY -sr V (B R )D S S (V) 60 3 >D (A) 1.1 1 SOURCE 2 GATE 3 & CASE-DRAIN n ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYMBOL LIMITS UNITS Drain-Source Voltage	OCR Scan	2N6660 O-205AD) 9500/547A.	PDF
JANTX2N6660 Abstract: JANTXV2N6660 Text: 2N6660JAN/JANTX/JANTXV_ VISHAY Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUM MARY V (BR)DSS M i n ( V ) r DS(on) M a x ( Q ) v G S(th) ( V ) I d (A ) 60 3 e v G S= 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIO NS	OCR Scan	2N6660JAN/JANTX/JANTXV_ 2N6659/2N6660, VQ1004J/P VNDQ06 S-04279-- 16-Jul-01 JANTX2N6660 JANTXV2N6660	PDF
1004J Abstract: 2N6659 M 1004j Text: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1	OCR Scan	2N6659/2N6660, VQ1004J/P_ 2N6659 2N6660 VQ1004J/P P-37994-- 1004J M 1004j	PDF
Untitled Abstract: No abstract text available Text: 2N6660 2N6661 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON I d (ON) b v dgs (max) (min) TO-39 60V 3 .0 ÌÌ 1.5A 2N 6660 90V 4 .0 ÌÌ 1.5A 2N6661 Advanced DMOS Technology High Reliability Devices	OCR Scan	2N6660 2N6661	PDF
2N6660 Abstract: 2N6661 TC5205 Text: [FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. 2N6660,1 1.2 AMPERES 60, 90 VOLTS RPS ON = 3.0 n	OCR Scan	2N6660 2N6660 2N6661 2N6661 TC5205	PDF

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2N6660 Datasheets (39)

2N6660 Datasheets Context Search

2N6660 JANTX

2N6660

TN2524

2N6660

2N6660CSM4

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2N6660

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2N6660X

2N6660

2n6660

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2N6660

2N6661

2N6155

4900 SIEMENS

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2N6660

JANTX2N6660

1004J

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2N6660