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    Rochester Electronics LLC 2SA1730S-TD-E

    BIP PNP 3A 40V
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    DigiKey 2SA1730S-TD-E Bulk 9,894 753
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    onsemi 2SA1730S-TD-E

    2SA1730S-TD-E
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    Verical () 2SA1730S-TD-E 6,894 784
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    2SA1730S-TD-E 3,000 784
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    Rochester Electronics 2SA1730S-TD-E 9,894 1
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    2SA1730 Datasheets (13)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    PDF Size
    Page count
    2SA1730
    Kexin PNP Epitaxial Planar Silicon Original PDF 55.14KB 2
    2SA1730
    Sanyo Semiconductor High-speed switching Original PDF 98.05KB 4
    2SA1730
    TY Semiconductor PNP Epitaxial Planar Silicon - SOT-89 Original PDF 84.66KB 2
    2SA1730
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 114.75KB 2
    2SA1730
    Unknown Transistor Substitution Data Book 1993 Scan PDF 30.49KB 1
    2SA1730
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.54KB 1
    2SA1730
    Unknown Japanese Transistor Cross References (2S) Scan PDF 35.2KB 1
    2SA1730
    Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF 85.82KB 1
    2SA1730
    Sanyo Semiconductor HIGH-SPEED SWITCHING APPLICATIONS (Small Signal Transistors) Scan PDF 139.04KB 1
    2SA1730
    Sanyo Semiconductor Small Signal Transistors for High Speed Switching Scan PDF 139.05KB 1
    2SA1730Q
    Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF 101.42KB 3
    2SA1730R
    Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF 101.4KB 3
    2SA1730S
    Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF 101.41KB 3

    2SA1730 Datasheets Context Search

    Catalog Datasheet
    Type
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    PDF

    Contextual Info: Product specification 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original
    2SA1730 250mm2 -75mA PDF

    2SA1730

    Abstract: EN3134
    Contextual Info: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


    Original
    EN3134 2SA1730 2SA1730] 2SA1730 EN3134 PDF

    2SA1730

    Abstract: ITR04415 ITR04416 ITR04418
    Contextual Info: Ordering number:ENN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions unit:mm 2038A [2SA1730] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.


    Original
    ENN3134 2SA1730 2SA1730] 25max 2SA1730 ITR04415 ITR04416 ITR04418 PDF

    7007B-004

    Abstract: ITR04416 ITR04418 2SA1730 ITR04415
    Contextual Info: 2SA1730 注文コード No. N 3 1 3 4 A 三洋半導体データシート 半導体ニューズ No.N3134 をさしかえてください。 2SA1730 PNP エピタキシャルプレーナ型シリコントランジスタ 高速度スイッチング用 特長


    Original
    2SA1730 N3134 250mm2 500mA 500mA 33110JB ITR04421 7007B-004 ITR04416 ITR04418 2SA1730 ITR04415 PDF

    2SA1730

    Contextual Info: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original
    2SA1730 EN3134A 2SA1730 PDF

    Contextual Info: O rd e rin g n u m b e r: EN 3 1 3 4 SA\YO i t 2SA1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s •Adoption of FBET, MBIT processes • Large current capacity ■Low collector-to-emitter saturation voltage


    OCR Scan
    2SA1730 250mm2 6139MO PDF

    Contextual Info: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original
    2SA1730 EN3134A PDF

    AH MARKING

    Abstract: KEXIN aH SMD SMD AH SMD BR 2SA1730
    Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter


    Original
    2SA1730 250mm2 -75mA AH MARKING KEXIN aH SMD SMD AH SMD BR 2SA1730 PDF

    2SA1148

    Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
    Contextual Info: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9


    OCR Scan
    2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 SA1730 2SA1731 SC-70) 2SA1748 2SC4564 2SA1148 SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130 PDF

    kw2j

    Abstract: MARKING 2J0 2sc2960 a-y
    Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller


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    250mm trl20 MT930622TR kw2j MARKING 2J0 2sc2960 a-y PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 PDF

    2SC5187

    Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
    Contextual Info: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller


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    250mm 2SA1883 2SC4987 2SA1763 SC4452 2SC4443 2SA1764 2SC4453 2SC4168 2SA1728 2SC5187 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y PDF

    2SA1730

    Contextual Info: O rd e rin g n u m b e r : E N 3 1 3 4 2 S A 1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage ■Fast switching speed


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    EN3134 250mm2 2SA1730 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan
    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF