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    2SA1730 Price and Stock

    Rochester Electronics LLC 2SA1730S-TD-E

    BIP PNP 3A 40V
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    onsemi 2SA1730S-TD-E

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    Rochester Electronics 2SA1730S-TD-E 9,894 1
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    2SA1730 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1730 Kexin PNP Epitaxial Planar Silicon Original PDF
    2SA1730 Sanyo Semiconductor High-speed switching Original PDF
    2SA1730 TY Semiconductor PNP Epitaxial Planar Silicon - SOT-89 Original PDF
    2SA1730 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1730 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1730 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1730 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1730 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SA1730 Sanyo Semiconductor HIGH-SPEED SWITCHING APPLICATIONS (Small Signal Transistors) Scan PDF
    2SA1730 Sanyo Semiconductor Small Signal Transistors for High Speed Switching Scan PDF
    2SA1730Q Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    2SA1730R Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    2SA1730S Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF

    2SA1730 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1730 250mm2 -75mA

    2SA1730

    Abstract: EN3134
    Text: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


    Original     		PDF EN3134 2SA1730 2SA1730] 2SA1730 EN3134

    2SA1730

    Abstract: ITR04415 ITR04416 ITR04418
    Text: Ordering number:ENN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions unit:mm 2038A [2SA1730] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.


    Original     		PDF ENN3134 2SA1730 2SA1730] 25max 2SA1730 ITR04415 ITR04416 ITR04418

    7007B-004

    Abstract: ITR04416 ITR04418 2SA1730 ITR04415
    Text: 2SA1730 注文コード No. N 3 1 3 4 A 三洋半導体データシート 半導体ニューズ No.N3134 をさしかえてください。 2SA1730 PNP エピタキシャルプレーナ型シリコントランジスタ 高速度スイッチング用 特長


    Original     		PDF 2SA1730 N3134 250mm2 500mA 500mA 33110JB ITR04421 7007B-004 ITR04416 ITR04418 2SA1730 ITR04415

    2SA1730

    Abstract: No abstract text available
    Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original     		PDF 2SA1730 EN3134A 2SA1730

    Untitled

    Abstract: No abstract text available
    Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original     		PDF 2SA1730 EN3134A

    AH MARKING

    Abstract: KEXIN aH SMD SMD AH SMD BR 2SA1730
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SA1730 250mm2 -75mA AH MARKING KEXIN aH SMD SMD AH SMD BR 2SA1730

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: EN 3 1 3 4 SA\YO i t 2SA1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s •Adoption of FBET, MBIT processes • Large current capacity ■Low collector-to-emitter saturation voltage


    OCR Scan     		PDF 2SA1730 250mm2 6139MO

    2SA1148

    Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
    Text: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9


    OCR Scan     		PDF 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 SA1730 2SA1731 SC-70) 2SA1748 2SC4564 2SA1148 SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130

    kw2j

    Abstract: MARKING 2J0 2sc2960 a-y
    Text: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller


    OCR Scan     		PDF 250mm trl20 MT930622TR kw2j MARKING 2J0 2sc2960 a-y

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SC5187

    Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
    Text: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller


    OCR Scan     		PDF 250mm 2SA1883 2SC4987 2SA1763 SC4452 2SC4443 2SA1764 2SC4453 2SC4168 2SA1728 2SC5187 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y

    2SA1730

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r : E N 3 1 3 4 2 S A 1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage ■Fast switching speed


    OCR Scan     		PDF EN3134 250mm2 2SA1730

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643