2SC1847

Abstract: 2SA886
Contextual Info: JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

100 HFK

Abstract: 16Oi 2SA886 2SC1847 10 HFK
Contextual Info: _ PANASONIC IN DL /E LE K{ SE MI> 7EC D | b^32fiSM~DGG07t,S t> | ' T - 3 3 - H ‘ 2SA886 2SA886 ' > >J - I V 2SC1847 P N P 3 £ 's~f x — • ^ •J fé /S i P N P E p ita x ia l P la n a r Pow er Amplifier 'J > V 2 >J /'C om plem entary Pair with 2SC1847

2SA0886

Abstract: 2SA886 2SC1847
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2

2SA886

Abstract: 2SC1847 2SA0886
Contextual Info: Power Transistors 2SC1847 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0886 2SA886 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2

2SC1847

Abstract: 2SA0886 2SA886
Contextual Info: Power Transistors 2SA0886 2SA886 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB638

Abstract: 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SA953 2SA1217 2SB793 2SA1108
Contextual Info: - 66 - « m Type ft No. € M a n uf. E ft 2SA886 2SB1314 2SB601 2SB1434 2SA1286 893 - 2SB 894 ^ 2 SB 895 2SB 895A 2SB 899 2SB 900 2SB 901 2S8 902 2SB 905 2SB 908 2SB 907 2SB 908 2SB 909- 2SB 910- 2SB 911 2SB 912 2SB 913 2SB 914 ; - „ . - 2SB 915 2SB 916

2SA886

Abstract: 2SC1847
Contextual Info: Inchange Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN

2SA886

Abstract: 2SC1847
Contextual Info: AOK Product Specification AOK Semiconductor S ilicon PNP Power Transistors 2SA886 DESCRIPTION • With TO-126 package • Complement to type 2SC1847 • Low collector-emitter saturation voltage APPLICATIONS • For low-frequency power amplification PINNING

T1041

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA0886

Abstract: 2SA886 2SC1847
Contextual Info: Power Transistors 2SA0886 2SA886 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1847 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

NPN 2A TO 126

Abstract: 2SC1847 2SA886
Contextual Info: SavantIC Semiconductor Product Specification 2SC1847 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA886 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA886

Abstract: 2SC1847 2SA886V
Contextual Info: Power Transistors 2SA886 2SA886 Silicon PNP Epitaxial Planar Type P ackage Dim ensions A F Pow er Am plifier C om plem entary Pair with 2 S C 1 8 4 7 • Features • 4W output in complementary pair with 2SC1847 • TO-126 package, no insulator needed when fixing to a heat sink

Contextual Info: 2SA886 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)1.5

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Power Transistors 2SA886 Silicon PNP epitaxial planar type For low-frequency power amplification ('nil: mm o n+°5 8.0-0.1 Complementary to 2SC1 847

2SC1847

Abstract: ta 6932 2SA886
Contextual Info: Power T ransistors 2SC1847 2SC1847 Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA886 Unit ; mm 3 . 2 ± 0 .2 8.0!S1 • Features • 4W output in complementary pair with 2SA886 • TO-126 package, no insulator needed when fixing to a heat sink

bt35f

Abstract: IB-015 i3205S 2SA886 2SC1847 B1326 BT35
Contextual Info: Power T ransistors 2SA886 2SA886 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC1847 • Features • 4W output in com plem entary pair with 2SC1847 • T O -126 package, no insulator needed w hen fixing to a heat sink

2SA0886

Abstract: 2SA886 2SC1847
Contextual Info: Power Transistors 2SA0886 2SA886 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1847 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SA886

Abstract: 2SC1847
Contextual Info: SavantIC Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2SC1847

Abstract: 2SA886 2SC1847 R
Contextual Info: Inchange Semiconductor Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION

2SA886

Abstract: 2SC1847
Contextual Info: JMnic Product Specification 2SA886 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1847 ・Low collector-emitter saturation voltage APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3