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    Panasonic Electronic Components 2SB14160RA

    TRANS PNP 60V 3A MT-3
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    2SB1416 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1416 Panasonic PNP Transistor Original PDF
    2SB1416 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1416 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1416 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1416 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1416 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1416 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1416 Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Scan PDF
    2SB14160RA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 60VCEO 3A MT-3 Original PDF
    2SB1416P Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1416Q Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1416R Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF

    2SB1416 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SD2136 2SB1416 2SB1416 2SD2136 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit


    Original     		2002/95/EC) 2SD2136 2SB1416 PDF

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)


    Original     		2SD2136 2SB1416 2SB1416 2SD2136 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2SD2136 2SB1416 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2SB1416 2SD2136 PDF

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es


    Original     		2002/95/EC) 2SB1416 2SD2136 2SB1416 2SD2136 PDF

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2SB1416 2SD2136 2SB1416 2SD2136 PDF

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2SD2136 2SB1416 2SB1416 2SD2136 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit


    Original     		2002/95/EC) 2SD2136 2SB1416 PDF

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2SB1416 2SD2136 2SB1416 2SD2136 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2002/95/EC) 2SB1416 2SD2136 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SD2136 2SB1416 PDF

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es


    Original     		2002/95/EC) 2SB1416 2SD2136 2SB1416 2SD2136 PDF

    2SD2136

    Abstract: 2SB1416
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2SD2136 2SB1416 2SD2136 2SB1416 PDF

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		2SB1416 2SD2136 2SB1416 2SD2136 PDF

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SD2136 2SB1416 2SB1416 2SD2136 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 0.8 C 16.0±1.0


    Original     		2002/95/EC) 2SB1416 2SD2136 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )


    OCR Scan     		2SB1416 2SD2136 Glh321 52ETE00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SD213Ó 2SD2136 Silicon NPN Triple-Diffused Planar Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1416 • Features • H igh DC c u r re n t gain hFE and good lin earity • L ow c o lle c to r-e m itte r sa tu ra tio n v o ltag e


    OCR Scan     		2SD213Ã 2SD2136 2SB1416 200MHz bT32flSe PDF

    25814

    Abstract: 2SB141 2SB1416 2SD2136
    Text: Power Transistors 2SB141Ó 2SB1416 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SD2136 ■ Features • H igh D C c u r re n t gain Iife and good lin earity • L o w c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcEtaau)


    OCR Scan     		2SB141Ã 2SB1416 2SD2136 -20mA 25814 2SB141 2SB1416 2SD2136 PDF

    2SB1424

    Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
    Text: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446


    OCR Scan     		2SB1413 2SB1414 ZSB1415 2SB1416 2SB1417 2SB1417A 2SB1418 2SD2185 SC-59 2SB1440 2SB1424 2SB1426 2SB1414 2SB1418 2SB1418A 2SB1419 PDF

    2SD2136

    Abstract: 957a 2SB1416
    Text: Power Transistors 2SD213Ó 2SD2136 Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB1416 • Features • High DC current gain hFE and good linearity • Low coliector-em itter saturation voltage (Vceisso)


    OCR Scan     		2SD2136 2SB1416 2SD2136 957a 2SB1416 PDF

    2SB816

    Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
    Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3


    OCR Scan     		2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416 PDF