2SD2137A
Abstract: 2SB1417 2SB1417A 2SD2137
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A
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2SD2137,
2SD2137A
2SB1417
2SB1417A
2SD2137
2SD2137A
2SB1417A
2SD2137
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SB1417A
2SD2137A
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2SB1417
Abstract: 2SB1417A 2SD2137 2SD2137A
Text: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB1417 Collector to emitter voltage 2SB1417 Rating −60 VCBO Unit −60 VCEO 2.5±0.1 1.05±0.1
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2SB1417,
2SB1417A
2SB1417
2SB1417
2SB1417A
2SD2137
2SD2137A
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2SB1417
Abstract: 2SB1417A 2SD2137 2SD2137A
Text: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB1417 base voltage 2SB1417A Collector to
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2SB1417,
2SB1417A
2SD2137
2SD2137A
2SB1417
2SB1417
2SB1417A
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)
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Original
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2002/95/EC)
2SB1417A
2SD2137A
2SB1417A
2SD2137A
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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Original
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2002/95/EC)
2SB1417A
2SD2137A
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PDF
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2SD2137A
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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Original
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2002/95/EC)
2SB1417A
2SD2137A
2SD2137A
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PDF
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2SB1417A
Abstract: 2SD2137A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)
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Original
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2002/95/EC)
2SB1417A
2SD2137A
2SB1417A
2SD2137A
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2SB1417
Abstract: 2SB1417A 2SD2137 2SD2137A
Text: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB1417 Collector to emitter voltage 2SB1417 Rating −60 VCBO Unit −60 VCEO 2.5±0.1 1.05±0.1
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2SB1417,
2SB1417A
2SB1417
2SB1417
2SB1417A
2SD2137
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open)
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2SB1417A
2SD2137A
2SB1417A
2SD2137A
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2SB1417
Abstract: 2SB1417A 2SD2137 2SD2137A
Text: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type Unit: mm 5.0±0.1 1.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB1417 Collector to emitter voltage 2SB1417 Rating −60 VCBO Unit −60 VCEO
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2SB1417,
2SB1417A
2SB1417
2SB1417
2SB1417A
2SD2137
2SD2137A
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A
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2SD2137,
2SD2137A
2SD2137
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2sd2137
Abstract: No abstract text available
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current
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2SD2137,
2SD2137A
2SD2137
2sd2137
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)
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2002/95/EC)
2SD2137A
2SB1417A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)
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Original
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2002/95/EC)
2SD2137A
2SB1417A
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2SB1417A
Abstract: 2SD2137A
Text: Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 6 V Collector current
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2SD2137A
2SB1417A
2SB1417A
2SD2137A
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2SB1417A
Abstract: 2SD2137A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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2002/95/EC)
2SD2137A
2SB1417A
2SD2137A
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PDF
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2SD2137
Abstract: 2SB1417 2SB1417A 2SD2137A
Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A
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2SD2137,
2SD2137A
2SD2137
2SD2137
2SB1417
2SB1417A
2SD2137A
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SB1417
Abstract: 2SB1417A 2SD2137
Text: Power T ransistors 2 S B 1 4 1 7 , 2SB1417, 2SB1417A 2 S B 1 4 1 7 A Silicon PNP Epitaxial Planar Type • P ackage Dim ensions Pow er Am plifier C om plem entary Pair with 2 S D 2 1 3 7 ■ Features • H igh DC c u r re n t gain I if e an d good lin earity
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OCR Scan
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2SB1417,
2SB1417A
2SB1417
2SB1417A
001b324
2SD2137
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PDF
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2SD2137
Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
Text: 2SD2137, 2SD2137A Power Transistors 2SD2137, 2SD 2137A Silicon NPN Triple-Diffused Planar Type Power Amplifier C om plem entary Pair with 2SB1417, 2SB1417A • Features • H igh DC c u r re n t gain h H -F and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VtEcsao)
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OCR Scan
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2SD2137,
2SD2137A
2SB1417,
2SB1417A
2SD2137
2SD2137
pc 817
2SB1417
2SB1417A
2SD2137A
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PDF
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SB1417, 2SB14Í7A 2SB1417, 2SB1417A Silicon PNP Epitaxial Planar Type • Package Dimensions Power Amplifier Complementary Pair with 2SD2137 ■Features • High D C current gain Iife and good linearity • Low collector-em itter saturation voltage (VCE<sat>)
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OCR Scan
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2SB1417,
2SB14Ã
2SB1417A
2SD2137
2SB1417
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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OCR Scan
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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PDF
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