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    2SB141 Price and Stock

    ROHM Semiconductor 2SB1412TLQ

    TRANS PNP 20V 5A SOT-428
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    DigiKey 2SB1412TLQ Digi-Reel 2,550 1
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    2SB1412TLQ Cut Tape 2,550 1
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    2SB1412TLQ Cut Tape 2,013 1
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    2SB1412TLQ Digi-Reel 2,013 1
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    2SB1412TLQ Reel 2,500
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    Mouser Electronics 2SB1412TLQ 134
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    Verical 2SB1412TLQ 2,040 288
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    2SB1412TLQ 4,225
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    ComSIT USA 2SB1412TLQ 2,500
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    CoreStaff Co Ltd 2SB1412TLQ 2,040
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    ROHM Semiconductor 2SB1412TLR

    TRANS PNP 20V 5A CPT3
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    DigiKey 2SB1412TLR Cut Tape 1,850 1
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    2SB1412TLR Digi-Reel 1,850 1
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    2SB1412TLR Reel 2,500
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    Verical 2SB1412TLR 5,460 126
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    Bristol Electronics 2SB1412TLR 564
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    Quest Components 2SB1412TLR 451
    • 1 $1.14
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    2SB1412TLR 172
    • 1 $0.684
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    Chip1Stop 2SB1412TLR Cut Tape 5,460
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    Panasonic Electronic Components 2SB14160RA

    TRANS PNP 60V 3A MT-3
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    ROHM Semiconductor 2SB1412TLP

    TRANS PNP 20V 5A CPT3
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    DigiKey 2SB1412TLP Reel 2,500
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    Bristol Electronics 2SB1412TLP 2,386
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    Quest Components 2SB1412TLP 1,908
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    Panasonic Electronic Components 2SB14140RA

    TRANS PNP 150V 1A MT-3
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    2SB141 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB141 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB141 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB141 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB141 Unknown Vintage Transistor Datasheets Scan PDF
    2SB141 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB141 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB141 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB141 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB141 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB141 Unknown Transistor Replacements Scan PDF
    2SB141 Unknown Cross Reference Datasheet Scan PDF
    2SB1410 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1410 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1411 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1411 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1411 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1411 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1411 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1411 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1411 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    ...

    2SB141 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1412 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 PNP silicon transistor.


    Original     		PDF 2SB1412 O-252 100MHz

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD2136 2SB1416 2SB1416 2SD2136

    2SB1418

    Abstract: 2SB1418A 2SD2138 2SD2138A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 10.0±0.2 M Di ain sc te on na tin nc ue e/ d 1.0±0.2 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SB1418, 2SB1418A 2SB1418 2SB1418 2SB1418A 2SD2138 2SD2138A

    2SD2137A

    Abstract: 2SB1417 2SB1417A 2SD2137
    Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A


    Original     		PDF 2SD2137, 2SD2137A 2SB1417 2SB1417A 2SD2137 2SD2137A 2SB1417A 2SD2137

    2SB1412

    Abstract: 2SB1326 2SB1386 2SD2118 T100 DPACK2
    Text: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage


    Original     		PDF 2SB1412 2SD2118 2SB1386 2SB132 2SB1412) 2SB1412 2SB1326 2SB1386 2SD2118 T100 DPACK2

    2SB1412

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF O-251/TO-252-2L 2SB1412 O-251 O-252-2L -500mA -100mA -50mA 30MHz 2SB1412

    2SB1418

    Abstract: 2SB1418A 2SD2138 2SD2138A
    Text: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A Collector to base voltage 2SB1418 Collector to emitter voltage 2SB1418 18.0±0.5 Solder Dip Symbol


    Original     		PDF 2SB1418, 2SB1418A 2SD2138 2SD2138A 2SB1418 2SB1418 2SB1418A 2SD2138A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit


    Original     		PDF 2002/95/EC) 2SD2136 2SB1416

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB1418 and 2SB1418A 4.2±0.2 Unit: mm • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SD2138, 2SD2138A 2SB1418 2SB1418A 2SD2138 2SD2138A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A 5.0±0.1 90˚ • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1418, 2SB1418A 2SD2138 2SD2138A 2SB1418 2SB1418A

    2SB1414

    Abstract: 2SD2134
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl


    Original     		PDF 2002/95/EC) 2SD2134 2SB1414 2SB1414 2SD2134

    transistor 2sb1412

    Abstract: 2SB1412
    Text: 2SB1412 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage


    Original     		PDF O-251/TO-252-2L 2SB1412 O-251 O-252-2L -500mA -100mA -50mA 30MHz transistor 2sb1412

    2SB1412

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT VCE(SAT)= -0.35V (Typ)


    Original     		PDF 2SB1412 2SB1412 O-252 2SB1412L 2SB1412-x-TN3-R 2SB1412L-x-TN3-R QW-R209-021

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)


    Original     		PDF 2SD2136 2SB1416 2SB1416 2SD2136

    2SB1418

    Abstract: 2SB1418A 2SD2138 2SD2138A
    Text: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A Unit: mm 5.0±0.1 10.0±0.2 ● High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping


    Original     		PDF 2SB1418, 2SB1418A 2SD2138 2SD2138A 2SB1418 2SB1418 2SB1418A 2SD2138A

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SB1412 PNP SILICON TRANSISTOR H I GH V OLT AGE SWI T CH I N G T RAN SI ST OR  DESCRI PT I ON The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT


    Original     		PDF 2SB1412 2SB1412 2SB1412L-x-TN3-T 2SB1412G-x-TN3-T 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R O-252 QW-R209-021

    BJT BF 167

    Abstract: 2SB1412
    Text: SPICE PARAMETER 2SB1412 by ROHM TR Div. * 2SB1412 PNP BJT model * Date: 2006/11/14 .MODEL 2SB1412 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369


    Original     		PDF 2SB1412 Q2SB1412 00E-15 4533E-12 000E-3 569E-3 05E-12 17E-12 BJT BF 167 2SB1412

    2SB1412

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. „ 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)


    Original     		PDF 2SB1412 2SB1412 O-252 2SB1412L-TN3-R 2SB1412G-TN3-R QW-R209-021

    2SB1418

    Abstract: 2SB1418A 2SD2138
    Text: Power T ransistors 2SB1-418, 2SB1418Ä 2SB1418, 2SB1418A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2SD 2138 • Features • H igh D C c u r re n t g ain I i f e • H igh s p e e d sw itc h in g


    OCR Scan     		PDF 2SB1418, 2SB1418Ã 2SB1418A 2SD2138 2SB1418 2SB1418A 2SD2138

    Untitled

    Abstract: No abstract text available
    Text: 2SB1411 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 411 Unit in mm SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. (VCE = -3 V , Ic = - 1A) Low Saturation Voltage: V qe (sat)~ —1.5V(Max.) (Iç;= —1A)


    OCR Scan     		PDF 2SB1411

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )


    OCR Scan     		PDF 2SB1412 2SB1386 2SD2118 2SD2166. SC-62 3B1326/2SB1436

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )


    OCR Scan     		PDF 2SB1416 2SD2136 Glh321 52ETE00

    2SB1418

    Abstract: 2SB1418A 2SD2138 2SD2138A
    Text: Power Transistors 2SD2138, 2SD2138A 2SD2138, 2SD2138A Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1418, 2SB1418A • Features • H ig h D C c u r r e n t g a in Oife a n d g o o d lin e a r ity


    OCR Scan     		PDF 2SD2138, 2SD2138A 2SB1418, 2SB1418A 2SD2138 2SB1418 2SB1418A 2SD2138A

    transistor b1412

    Abstract: 2SB1412F5 b1412
    Text: 2SB1412F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1412-*Q, where ★ is hFE code and □ is lot number low collector saturation voltage, typically VCE(sat) = -0.35 V for lC/lB = -4 A/-0.1 A


    OCR Scan     		PDF 2SB1412F5 SC-63) B1412- 2SB1412F5 transistor b1412 b1412