2SB0930A Search Results

2SB0930A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SB0930A		Panasonic	PNP Transistor		Original	PDF
2SB0930A		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor		Original	PDF
2SB0930AP		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor		Original	PDF
2SB0930AQ		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor		Original	PDF

2SB0930A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A	Original	PDF	2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A	Original	PDF	2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit	Original	PDF	2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253	Original	PDF	2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253
2SB0930 Abstract: 2SB0930A 2SD1253 2SD1253A Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253 Base open 2SD1253A VCEO 60 V Emitter-base voltage (Collector open)	Original	PDF	2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 2SB0930 2SB0930A 2SD1253 2SD1253A
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Text: Power Transistors 2SB0930 2SB930 , 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A −60 V Collector-emitter voltage 2SB0930 (Base open) 2SB0930A	Original	PDF	2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Text: Power Transistors 2SB0930, 2SB0930A 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 –60 –5 V ICP –8 A Collector current IC –4 A Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol Collector cutoff	Original	PDF	2SB0930, 2SB0930A 2SB930, 2SB930A) 2SB0930 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253	Original	PDF	2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253
2SB0930 Abstract: 2SB0930A 2SD1253 2SD1253A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1253A	Original	PDF	2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 2SB0930 2SB0930A 2SD1253 2SD1253A
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0930 2SB930 and 2SB0930A (2SB930A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage	Original	PDF	2SD1253, 2SD1253A 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928