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    2SD1253A Search Results

    2SD1253A Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1253A Panasonic NPN Transistor Original PDF
    2SD1253A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1253A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1253A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1253A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1253A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1253A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1253A Unknown Cross Reference Datasheet Scan PDF
    2SD1253A Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1253AP Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1253AQ Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1253AR Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1253A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P13W

    Abstract: 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Pow er Tra n sisto rs 2SD1253, 2SD1253A 2SD1253, 2SD1253A Silicon N PN Trip le -D iffu se d Planar Type P ackage D im ension s P ow e r A m plifier C o m p le m e n ta ry Pair with 2SB 930, 2SB 93 0A U nit ! mm • Fe a tu res 8.7 • H igh DC c u r re n t gain <hFE and go o d lin earity


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    2SD1253, 2SD1253A 2SB930, 2SB930A 2SD1253 P13W 2SB930 2SB930A 2SD1253A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A


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    2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A


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    2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 PDF

    2SD1253

    Abstract: 2SD1253A 2SB930 2SB930A DSA003717
    Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB930 and 2SB930A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 5 V Peak collector current ICP


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    2SD1253, 2SD1253A 2SB930 2SB930A 2SD1253 2SD1253 2SD1253A 2SB930A DSA003717 PDF

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit


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    2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253


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    2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 PDF

    2SB0930

    Abstract: 2SB0930A 2SD1253 2SD1253A
    Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253 Base open 2SD1253A VCEO 60 V Emitter-base voltage (Collector open)


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    2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 2SB0930 2SB0930A 2SD1253 2SD1253A PDF

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB0930 2SB930 , 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A −60 V Collector-emitter voltage 2SB0930 (Base open) 2SB0930A


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    2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253


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    2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 PDF

    2SB0930

    Abstract: 2SB0930A 2SD1253 2SD1253A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1253A


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    2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 2SB0930 2SB0930A 2SD1253 2SD1253A PDF

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0930 2SB930 and 2SB0930A (2SB930A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage


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    2SD1253, 2SD1253A 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1253, 2SD1253A 2SD1253, 2SD1253A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB930, 2SB930A • Features U nit ! mm 8.7 3.7max. max. 1.1 max 6 .5 m a x . • High DC c u rre n t gain Iife and good linearity


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    2SD1253, 2SD1253A 2SB930, 2SB930A 2SD1253 PDF

    2SD1253

    Abstract: 2SD1253A
    Text: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1253,2SD1253A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1


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    2SD1253 2SD1253A O-252 2SD1253 2SD1253A PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1253,2SD1253A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    2SD1253 2SD1253A O-252 2SD1253 PDF

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


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    MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596 PDF

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


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    2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902 PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


    OCR Scan
    2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908 PDF

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V PDF

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB0930, 2SB0930A 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 –60 –5 V ICP –8 A Collector current IC –4 A Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol Collector cutoff


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    2SB0930, 2SB0930A 2SB930, 2SB930A) 2SB0930 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A PDF

    2SB930

    Abstract: 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 Emitter to base voltage VEBO –5 V Peak collector current ICP –8 A Collector current IC –4 A Collector power TC=25°C dissipation Junction temperature Tj


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    2SB930, 2SB930A 2SB930 2SB930 2SB930A 2SD1253 2SD1253A PDF