Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4
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2002/95/EC)
2SB0931
2SB931)
2SD1254
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2SB931
Abstract: 2SD1254 2SB0931
Text: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current
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2SB0931
2SB931)
2SB931
2SD1254
2SB0931
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2SB0931
Abstract: 2SB931 2SD1254
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5
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2002/95/EC)
2SB0931
2SB931)
2SD1254
2SB0931
2SB931
2SD1254
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol
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PDF
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2002/95/EC)
2SB0931
2SB931)
2SD1254
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol
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2002/95/EC)
2SB0931
2SB931)
2SD1254
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2SB0931
Abstract: 2SB931 2SD1254
Text: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130
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2SB0931
2SB931)
2SD1254
2SB0931
2SB931
2SD1254
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SB0931
Abstract: 2SD1254
Text: Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 130
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2SD1254
2SB0931
2SD1254
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SD1254
Abstract: 2SB0931
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C Parameter
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2002/95/EC)
2SD1254
2SB0931
2SD1254
2SB0931
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2SB0931
Abstract: 2SB931 2SD1254
Text: Power Transistors 2SD1254 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Ta=25°C
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2SD1254
2SB0931
2SB931
2SD1254
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C
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2SD1254
2SB0931
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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2SC5224
Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A
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O-126
O-202
T0-220
2SC1398A
2SB1573
2SD2407
O-220F
T0220F
T0220
2SC5224
2SA1949
2SD2407
A1534A
2SB0774
2SB1576
2SB946
T0-92N
2SA1951
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