Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Symbol Rating Unit
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2002/95/EC)
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 5.5±0.2 2.7±0.2 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open)
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2SB1063
2SD1499
2SB1063
2SD1499
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SD1499
2SB1063
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2SB1063
Abstract: 2SD1499
Text: SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION
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2SB1063
O-220Fa
2SD1499
-100V;
-20mA
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open)
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2SB1063
2SD1499
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 APPLICATIONS
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2SB1063
2SD1499
-100V;
-20mA;
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open)
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2SD1499
2SB1063
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage
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2SD1499
2SB1063
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: JMnic Product Specification 2SB1063 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION
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2SB1063
O-220Fa
2SD1499
-100V;
-20mA
2SB1063
2SD1499
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SD1499
2SB1063
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2SD1499
Abstract: 2SB1063
Text: Inchange Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
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2SD1499
O-220Fa
2SB1063
O-220Fa)
2SD1499
2SB1063
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SD1499
2SB1063
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2SD1499
Abstract: 2SB1063
Text: SavantIC Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation · APPLICATIONS ·For high power amplifier applications
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2SD1499
O-220Fa
2SB1063
O-220Fa)
2SD1499
2SB1063
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2SB1063
Abstract: 2SD1499
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1499
2SB1063
SC-67
O-220F-A1
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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PDF
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2002/95/EC)
2SD1499
2SB1063
SC-67
O-220F-A1
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)
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Original
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PDF
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2002/95/EC)
2SB1063
2SD1499
SC-67
O-220F-A1
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage
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2SD1499
2SB1063
2SB1063
2SD1499
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1499 2SD1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m p lifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U nit I mm 4 .4 m a x . 1 0 .2m ax. 5 .7 m a x . ■ Features 2.9max • V e r y g o o d lin e a rity o f D C c u r r e n t gain h HE
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OCR Scan
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2SD1499
2SB1063
GGlfci742
2sdi499
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2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir with 2 S D 1 4 9 9 . P a c k a g e D im e n s io n s U n it • m m 4 .4 m a x . 1 0 .2 m a x . ■ F e a tu re s . • V e r y g o o d lin e a r ity o f D C c u r r e n t g a in
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2SB1063
2SD1499
bR3SB52
2SB1063
2SD1499
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2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2S D 1499 U n i t ' mm 4 ,4 m a x . 5.7 max. • Features 2.9max, :M %?§£Imm f&tìtormyr h-> : v • High tran sitio n frequency (fT
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2SB1063
2SD1499
-10-V,
2SB1063
2SD1499
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2SB1039
Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Text: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063
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2SB1028
2SB1030
2SB1030A
2SB1031K
2SB1032K
2SB1033
2SD1499
2SB1063
2SD1505
O-220ABÂ
2SB1039
2SB1045
2SB1038
2SB1035
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 • Features • V ery good linearity of DC current gain Ii f e • Wide area of safety operation (ASO) • High transition frequency (ft)
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2SB1063
2SD1499
13SaS2
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OF IC 741
Abstract: 741p operation of ic 741 of 741 ic uA 741 IC IC 741 IC ua 74 IC 741 to high current Darlington pair IC 2SB1063
Text: Power Transistors 2SD1499 2S D 1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m plifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U n it I mm 4.4m ax. 1 0 .2 m a x . ■ Features 2.9m ax • V ery goo d lin earity o f DC c u r re n t gain hhE
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2SD1499
2SB1063
001b743
OF IC 741
741p
operation of ic 741
of 741 ic
uA 741 IC
IC 741
IC ua 74
IC 741 to
high current Darlington pair IC
2SB1063
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2SD1539
Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5
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O-126
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SC3942
2SD1539
d53 pnp transistor
2sa137
2sb1071
2SA1375
2SA1605
2SA1817
2SC2258
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