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    Degson Electronics Co Ltd DGFA2S-B1-180-00A(H)

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    2SB1180 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1180 Panasonic TRANS DARLINGTON PNP 60V 8A 3I-G1 Original PDF
    2SB1180 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB1180 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1180 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1180 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1180 Panasonic Power Transistors Scan PDF
    2SB1180A Panasonic TRANS DARLINGTON PNP 80V 8A 3I-G1 Original PDF
    2SB1180A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB1180A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1180A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1180A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1180A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1180A Panasonic Power Transistors Scan PDF
    2SB1180AP Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF
    2SB1180AQ Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF
    2SB1180P Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF
    2SB1180Q Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF

    2SB1180 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1180

    Abstract: 2SB1180A 2SD1750 2SD1750A
    Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 TC=25˚C Symbol 2SD1750 Ratings


    Original     		PDF 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SB1180A 2SD1750 2SD1750A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180A

    2SB1180

    Abstract: 2SB1180A 2SD1750 2SD1750A
    Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 TC=25˚C Symbol 2SD1750 Ratings


    Original     		PDF 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SB1180A 2SD1750 2SD1750A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 M Di ain sc te on na tin nc ue e/


    Original     		PDF 2002/95/EC) 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180

    2SB1180

    Abstract: 2SB1180A 2SD1750 2SD1750A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3


    Original     		PDF 2002/95/EC) 2SB1180, 2SB1180A 2SB1180 2SB1180A 2SD1750 2SD1750A

    2SB1180

    Abstract: 2SB1180A 2SD1750 2SD1750A
    Text: Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the


    Original     		PDF 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180 2SB1180A 2SD1750 2SD1750A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A

    2sb1750

    Abstract: No abstract text available
    Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the


    Original     		PDF 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A 2sb1750

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    2SB1180

    Abstract: panasonic 2SB panasonic 2SD
    Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A • Package Dimensions U nit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3m ax. Medium Speed Power Switching . Complementary Pair with 2SD 1750, 2SD 1750A 3.2m ax. 0 . 9 1 0.1 0.5max, ■ Features


    OCR Scan     		PDF 2SB1180, 2SB1180A 2SB1180 panasonic 2SB panasonic 2SD

    2SB1180

    Abstract: 2SB1180A 2SD1750 2SD1750A
    Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching . Complementary Pair with 2SD1750, 2SD1750A • Features ‘ • High DC c u rre n t gain Iif e • High sp eed sw itching


    OCR Scan     		PDF 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A

    d1750

    Abstract: No abstract text available
    Text: Pow er Transistors 2 SD1 7 5 0 , 2 SD1 7 5 0 A 2SD1750, 2SD1750A Package Dimensions U n i t ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max. 7.3m ax. Medium speed Power Switching Complementary Pair with 2SB1180, 2SB1180A 3.2max. 0.9 ±0.1 0.5max.-


    OCR Scan     		PDF 2SD1750, 2SD1750A 2SB1180, 2SB1180A 2SD1750 2SD1750A i32flS2 d1750

    2SB1148

    Abstract: 2SB1148A 2SD1752 2SD1752A panasonic 2SB
    Text: Power Transistors 2 S 1 1 4 8 , B 2 2SB1148, 2SB1148A S B 1 1 4 8 A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair w ith ‘2S D 1752, 2S D 1752A U nit I mm • Features • Low co llecto r-eim itter saturation voltage V ceisjo


    OCR Scan     		PDF 2SB1148, 2SB1148A 2SB1148 2SB1148A 100mA --40mA --35mA 2SD1752 2SD1752A panasonic 2SB