2SD1750A Search Results

2SD1750A Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1750A	Panasonic	NPN Transistor Darlington	Original	PDF
2SD1750A	Panasonic	Silicon NPN triple diffusion planar type Darlington	Original	PDF
2SD1750A	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1750A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1750A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD1750AP	Panasonic	Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor	Original	PDF

2SD1750A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE	Original	2002/95/EC) 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
2sb1750 Abstract: No abstract text available Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the	Original	2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A 2sb1750	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE	Original	2002/95/EC) 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 TC=25˚C Symbol 2SD1750 Ratings	Original	2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SB1180A 2SD1750 2SD1750A	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 3.0±0.2 2.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3	Original	2002/95/EC) 2SD1750, 2SD1750A 2SD1750 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the	Original	2SD1750, 2SD1750A 2SD1750 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 TC=25˚C Symbol 2SD1750 Ratings	Original	2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SB1180A 2SD1750 2SD1750A	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE	Original	2002/95/EC) 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180A	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 M Di ain sc te on na tin nc ue e/	Original	2002/95/EC) 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3	Original	2002/95/EC) 2SB1180, 2SB1180A 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the	Original	2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF

d1750 Abstract: No abstract text available Text: Pow er Transistors 2 SD1 7 5 0 , 2 SD1 7 5 0 A 2SD1750, 2SD1750A Package Dimensions U n i t ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max. 7.3m ax. Medium speed Power Switching Complementary Pair with 2SB1180, 2SB1180A 3.2max. 0.9 ±0.1 0.5max.-	OCR Scan	2SD1750, 2SD1750A 2SB1180, 2SB1180A 2SD1750 2SD1750A i32flS2 d1750	PDF
D2375 Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A	OCR Scan	125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526	PDF
2SD1761 Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A Text: - 254 - m Ta=25‘ C , EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)	OCR Scan	2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A 2SD1749 2SD1749A 2SB1183 SC-63 2SD1759F5 2SD1761 2S01761 2sd1764 2sb117 2SD1760F5 2SD1747	PDF
SB-116 Abstract: 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161 Text: - 78 - Ta=25eC, Ep{ÎTc=25'C m g ffl & m Vcbo VcEO Ic(D C ) Pc Pc (V) (V) (A) (W) (W) ICBO ViuaA/ ilik) »^B (¥) m \m i n / w te & hF E y (Ta=25eO) u / î,- VIIIOA/ (V) [*EP(itypffl] /n o v i W W le (A) W I b (A) 2SB1Í5? tö T PA -100 -100 -5 3 60 -50	OCR Scan	2SB1157 2SB1158 2SB1159 2SB1160 2SB1161 2SB1162 2SB1163 2SB1176 2SD1747 2SB1177 SB-116 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161	PDF
2SD1555 Abstract: nec 2035 2SD880 2035 2SC3346 HITACHI 2055 2SD2023 2SC4817 2SD2404 2SC2631A Text: - m Manuf. □— A □— A □— A □— A □— A 2SD 2026 2SD 2027 2SD 2028 H tö T 2SD 2032 2S0 2033^2SD 2034 □ □ □ □ □ □ J y f / 2S0 2042 2SD 2043, 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2044 2045 _ 2046 ^ 2047 2048 2049 2050 2051	OCR Scan	2SD1394 2SD1481 2SD1217 2SD2027 2SD880 2SD1567 2SD856 2SD1248 2SD1634 2SD1928 2SD1555 nec 2035 2035 2SC3346 HITACHI 2055 2SD2023 2SC4817 2SD2404 2SC2631A	PDF
D1274A Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398 Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691	OCR Scan	2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398	PDF

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2SD1750A Search Results

2SD1750A Datasheets (6)

2SD1750A Datasheets Context Search

Untitled

2sb1750

Untitled

2SB1180

2SB1180

2SB1180

2SB1180

sn76131

2sc5929

2SC5936

Untitled

Untitled

2SB1180

2SB1180

d1750

D2375

2SD1761

SB-116

2SD1555

D1274A