2SD1832

Abstract: 2SB1292
Contextual Info: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation

2SB1292

Abstract: 2SD1832
Contextual Info: SavantIC Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1832 ·Excellent DC current gain characteristics ·Wide area of safe operation APPLICATIONS

2SD1832

Abstract: 2SB1292
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION •High Collector Current: IC= -5A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1832

2sd1832

Contextual Info: 2SB1292 h "7 > '> 7 , $ / T r a n s i s t o r s 2SB1292 i t t i - 7 i* - n & pnp v v =i > k =7> v 7, $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • • ^ Jfi^ tiü S/D im en sio n s Unit: mm) 1) VcE(sat) V cE (sat)= —'0.3V (Typ.) (Ic / I b = - 3 A / - 0 . 3 A )

2sb1292

Contextual Info: h ~7 > A V X $ Q n 2SB1292 /Transistors j O Q O '> • ; = ] > h 7 > V ^ ^ ‘ÎS ;iil}Æ ® ^ i|liffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor \t";£ III/D im e n s io n s Unit: mm 1 ) VcE(sat) A 'Æ ^ 'o V c E (s a t)= — 0 .3 V (T y p .) Ic / I b = _

Contextual Info: R OHM C O L T » 7 0 2 0 =1^ 40E » . ÜÜDSbOb 4 2SB1292 fs7 > ' / 7 Í¡ /Transistors 2331 iRHM X P N '> U -i> b P - r - 3 Z - i 9 ‘S iü l^ ^ ^ íe 'í'lffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ÿj-Jfi\t">ÉlU/’Dimensions Unit: mm

2SB1832

Abstract: 2SB1292
Contextual Info: Transistors 2SB1292 2SB1832 94L-316-B75 (94L-872-D75) 286

2SD1632

Abstract: 2SB1832 2SD1832 2SB1292
Contextual Info: 2SB1292 2SB1832 Transistors I Power Transistor —60V, —5A 2SB1292 •F e a tu re s 1 ) Low V c e (bbi). (T yp.— 0 . 3 V at I c / I b = - 3 / - 0 . 3 A ) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0W (T c = 2 5 °C ) 4 ) W ide SO A (safe operating area).

2SB1306

Abstract: 2sb130 2SD1832 2SB1267 2SB1268 2SB1269 2SB1270 2SB1271 2SB1272 2SB1273
Contextual Info: - 84 - Ta=25'C, *EP(ÌTc=25'C 3Ü 2SB1267 2SB1268 2SB1269 2SB1270 % f± £ =# H# ¿ÓDl¿l1 2SB1272 2SB1273 2SB1274 2SB1276 p — A =# D — A 9SR1977 □— 2SB1278 2SB1286 2SB1287 2SB1288 2SB1289 2SB1290 2SB1291 2SB1292 2SB1293 2SB1294 2SB1295 2SB1296

Contextual Info: 2SB1292 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SB1832

Abstract: 2SD1832 PSD3-10 2SB1292 SC-75A
Contextual Info: 2SB1292 2SB1832 Transistors Power Transistor —60V, —5A 2SB1292 I •A b s o lu te maximum ratings (T a *s25'C) •F e a tu re s 1 ) Low VcE<Mt). (T y p .-0 .3 V at Ic/Ib = —3 /-0 .3 A ) 2 ) Excellent DC current gain characteristics. 3 ) P c - 3 0 W ( T c = 2 5 r>

D1832

Abstract: transistor d1832 D1832 TRANSISTOR d 1832 B1292 B-1292
Contextual Info: 2SB1292 2SB1832 Transistors I Power Transistor —60V, —5A 2SB1292 •F e a tu re s 1 ) Low V cE (saf)- (Typ.-—0.3V a t 1c /I b = — 3 /—0.3A) •A b s o lu te maximum ratings (T a = 2 5 =C ) P ara m e te r 2 ) Excellent D C current gain characteristics.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

B1335A

Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033

en220

Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
Contextual Info: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^

2SA1441

Abstract: 2sb1340 2SA1712 2SA1763 2SB1020 2SB921 2SA1516 1729H 2SA1156 2SA1639
Contextual Info: 39 tt 2SA 2 SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2SA 2S A 2S A 2S A 2S A 2SA 2SA 2SA 2SA 1715 1716 1717 171 8 1719 1 720 1721 1722 1723 1725 1 726 1727 172 8 1729 1730 1731 1732 1733 1734 1735

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1185

Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598