2SD1832
Abstract: 2SB1292
Text: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation
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2SB1292
O-220Fa
2SD1832
2SD1832
2SB1292
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2SB1292
Abstract: 2SD1832
Text: SavantIC Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1832 ·Excellent DC current gain characteristics ·Wide area of safe operation APPLICATIONS
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2SB1292
O-220Fa
2SD1832
2SB1292
2SD1832
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2SD1832
Abstract: 2SB1292
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION •High Collector Current: IC= -5A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1832
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2SB1292
2SD1832
2SD1832
2SB1292
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2SB1832
Abstract: 2SB1292
Text: Transistors 2SB1292 2SB1832 94L-316-B75 (94L-872-D75) 286
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2SB1292
2SB1832
94L-316-B75)
94L-872-D75)
2SB1832
2SB1292
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Untitled
Abstract: No abstract text available
Text: 2SB1292 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SB1292
Freq12M
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sd1832
Abstract: No abstract text available
Text: 2SB1292 h "7 > '> 7 , $ / T r a n s i s t o r s 2SB1292 i t t i - 7 i* - n & pnp v v =i > k =7> v 7, $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • • ^ Jfi^ tiü S/D im en sio n s Unit: mm) 1) VcE(sat) V cE (sat)= —'0.3V (Typ.) (Ic / I b = - 3 A / - 0 . 3 A )
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2SB1292
2SB1292
2SD1832
T0-220FP
SC-67
2sd1832
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2sb1292
Abstract: No abstract text available
Text: h ~7 > A V X $ Q n 2SB1292 /Transistors j O Q O '> • ; = ] > h 7 > V ^ ^ ‘ÎS ;iil}Æ ® ^ i|liffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor \t";£ III/D im e n s io n s Unit: mm 1 ) VcE(sat) A 'Æ ^ 'o V c E (s a t)= — 0 .3 V (T y p .) Ic / I b = _
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2SB1292
2sb1292
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Untitled
Abstract: No abstract text available
Text: R OHM C O L T » 7 0 2 0 =1^ 40E » . ÜÜDSbOb 4 2SB1292 fs7 > ' / 7 Í¡ /Transistors 2331 iRHM X P N '> U -i> b P - r - 3 Z - i 9 ‘S iü l^ ^ ^ íe 'í'lffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ÿj-Jfi\t">ÉlU/’Dimensions Unit: mm
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2SB1292
2SD1832
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2SD1632
Abstract: 2SB1832 2SD1832 2SB1292
Text: 2SB1292 2SB1832 Transistors I Power Transistor —60V, —5A 2SB1292 •F e a tu re s 1 ) Low V c e (bbi). (T yp.— 0 . 3 V at I c / I b = - 3 / - 0 . 3 A ) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0W (T c = 2 5 °C ) 4 ) W ide SO A (safe operating area).
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2SB1292
2SB1832
2SB1292
2SD1832.
Pack80s
O-220FR
2SD1632
2SB1832
2SD1832
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2SB1306
Abstract: 2sb130 2SD1832 2SB1267 2SB1268 2SB1269 2SB1270 2SB1271 2SB1272 2SB1273
Text: - 84 - Ta=25'C, *EP(ÌTc=25'C 3Ü 2SB1267 2SB1268 2SB1269 2SB1270 % f± £ =# H# ¿ÓDl¿l1 2SB1272 2SB1273 2SB1274 2SB1276 p — A =# D — A 9SR1977 □— 2SB1278 2SB1286 2SB1287 2SB1288 2SB1289 2SB1290 2SB1291 2SB1292 2SB1293 2SB1294 2SB1295 2SB1296
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2SB1267
2SB1268
2SB1269
2SB1270
2SB1271
2SB1272
2SD1936
2SB1296
2SD1937
O-92NL)
2SB1306
2sb130
2SD1832
2SB1268
2SB1270
2SB1273
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2SB1832
Abstract: 2SD1832 PSD3-10 2SB1292 SC-75A
Text: 2SB1292 2SB1832 Transistors Power Transistor —60V, —5A 2SB1292 I •A b s o lu te maximum ratings (T a *s25'C) •F e a tu re s 1 ) Low VcE<Mt). (T y p .-0 .3 V at Ic/Ib = —3 /-0 .3 A ) 2 ) Excellent DC current gain characteristics. 3 ) P c - 3 0 W ( T c = 2 5 r>
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2SB1292
2SB1832
2SB1292
2SD1832.
O-220FP
O-220FP
O-220
O-126
O-220,
2SB1832
2SD1832
PSD3-10
SC-75A
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D1832
Abstract: transistor d1832 D1832 TRANSISTOR d 1832 B1292 B-1292
Text: 2SB1292 2SB1832 Transistors I Power Transistor —60V, —5A 2SB1292 •F e a tu re s 1 ) Low V cE (saf)- (Typ.-—0.3V a t 1c /I b = — 3 /—0.3A) •A b s o lu te maximum ratings (T a = 2 5 =C ) P ara m e te r 2 ) Excellent D C current gain characteristics.
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2SB1292
2SB1832
D1832.
--60V,
2SB1292
94L-872-D75)
D1832
transistor d1832
D1832 TRANSISTOR
d 1832
B1292
B-1292
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2SB1335A
Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Text: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)
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3SK212
O-220,
O-220FP,
2SD1562
2SB1085
2SD1763
2SB1186
2SD2033
2SB1353
2SD1562A
2SB1335A
2SD2037
2SD2061
28c43
2sb1357
2SB1359
2sd2041
2SD2096
2SD1856
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SB1335A
Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Text: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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O-220
T0-220FP
O-220FN
O-220FP
T0-220
O-220FN
SB1335A
2SD2061
2sd2033a
2SB1496
2SB1342
transistor 2sD2091
2SD2394
2SB1370
2SC4354
2SD2041
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B1335A
Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Text: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033
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TQ-220,
O-22QFP,
2SC4505
SDp901'
2SC4354
2SD2061
2SB1496
2SB1334"
2SC457
2SA1634
B1335A
D2033A
D1855A
D2037
B1186A
2sb1335a
d2038
B 1186a
B1085A
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en220
Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
Text: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^
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2sb1203
2SA1244
2SB933
2SB1204
2SB952
2SB945
2SB1294
2SB1018
2SB946
2SA145Z
en220
DTA143ES
2SA1441
1658 NEC
2sa 1659
RT1P431S
2sa1265n
2SB1188
2SB1371
2SA1659
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2SA1441
Abstract: 2sb1340 2SA1712 2SA1763 2SB1020 2SB921 2SA1516 1729H 2SA1156 2SA1639
Text: 39 tt 2SA 2 SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2SA 2S A 2S A 2S A 2S A 2SA 2SA 2SA 2SA 1715 1716 1717 171 8 1719 1 720 1721 1722 1723 1725 1 726 1727 172 8 1729 1730 1731 1732 1733 1734 1735
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2SB1227
2SA1718
2SB1194
2SB1340
2SB1228
2SB1020
2SA1719
2SB1195
2SB1344
2SA1441
2sb1340
2SA1712
2SA1763
2SB921
2SA1516
1729H
2SA1156
2SA1639
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SB1185
Abstract: 2sb1569a 2sd2037 transistor
Text: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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O-220
T0-220FP
T0-220FN
O-220FP
O-220
O-220FN
2SA1634
2SB1369
2SB1185
2sb1569a
2sd2037 transistor
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Untitled
Abstract: No abstract text available
Text: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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T0-220
T0-220FP
O-220FN
O-220FP
O-220
O-220FN
2SA1634
2SB1369
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2SC2021LN
2SB821
2SB1276
2SC2021MLN
O-92L
O-92LS
2SB737
V2SD786
2SA1137
2SC1740
2SC1740 transistor
A1757
B1130AM
2SD2061F
2SD1466
2SC5083
B1236A
mos-fet darlington
2sc4721
transistor 2sa1819
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2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
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2SK2262
2SK2294
-220FN
2SK2792
2SK2459N
2SK2460N
0-220FN
2SK2713
2SK2793
2SK2540
2SD2576
2sd2396
TA143E
2SK2459N
2SD 92 M
C2N3904
2SB1569A
2SD2061
2SD1189F
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2n4401 331
Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598
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2N3904
2N3906
2N4401
2N4403
2SA821S.
2SA830S.
2SA854S.
2SB822
2n4401 331
2n4403 331
2n3904 409
2n3904 331
k 2715
2n3906 331
1352s
MPSA06 346
2N584
C847B
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