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    2SB1555 Search Results

    2SB1555 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1555 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1555 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1555 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1555 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1555 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1555 Toshiba TRANS DARLINGTON PNP 140V 7A 3(2-21F1A) Scan PDF
    2SB1555 Toshiba Silicon PNP transistor for power amplifier applications Scan PDF
    2SB1555 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) Scan PDF
    2SB1555A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1555A Toshiba TRANS DARLINGTON PNP 140V 7A 3(2-21F1A) Scan PDF
    2SB1555B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1555B Toshiba TRANS DARLINGTON PNP 140V 7A 3(2-21F1A) Scan PDF
    2SB1555C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1555C Toshiba TRANS DARLINGTON PNP 140V 7A 3(2-21F1A) Scan PDF

    2SB1555 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2384 2SB1555 2-21F1A 2-21F1A 2SB1555 2SD2384

    2sd2384

    Abstract: 2-21F1A 2SB1555 ic3006
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2384 2SB1555 2-21F1A 2sd2384 2-21F1A 2SB1555 ic3006

    2sb1555

    Abstract: No abstract text available
    Text: 2SB1555 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1555 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2384 Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    PDF 2SB1555 2SD2384 2sb1555

    Untitled

    Abstract: No abstract text available
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2384 2SB1555 2-21F1A

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: 2SB1555 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1555 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2384 Maximum Ratings (Tc = 25°C) Characteristics Symbol


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    PDF 2SB1555 2SD2384 2-21F1A 2-21F1A 2SB1555 2SD2384

    2-21F1A

    Abstract: 2SB1555 2SD2384 A-8250
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SD2384 2SB1555 2-21F1A 2-21F1A 2SB1555 2SD2384 A-8250

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    darlington transistor power

    Abstract: 2SB1555 2SD2384
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications


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    PDF -140V 2SD2384 -140V darlington transistor power 2SB1555 2SD2384

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SB1555 2SD2384

    2SB1555

    Abstract: 2-21F1A 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1555 --140V 2SD2384 2SB1555 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2384 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO —140V (Mm.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2384 --140V 2SB1555

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1555 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR i <; r 1 *5 <5 <5 O POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : V q e q = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 2 5°C)


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    PDF 2SB1555 --140V 2SD2384

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S D 2 3 84 High Breakdown Voltage : VcEO = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2384 2SB1555

    tr5v

    Abstract: 2-21F1A 2SB1555 2SD2384
    Text: TOSHIBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1555 --140V 2SD2384 tr5v 2-21F1A 2SB1555

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2384 High Breakdown Voltage : V^ e o = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


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    PDF 2SD2384 2SB1555 2-21F1A 2SD2384

    Untitled

    Abstract: No abstract text available
    Text: 2SB1555O SILICON PNP EPITAXIAL TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIONS • High Breakdown Voltage : V q e O = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta * 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO VCEO -1 4 0 -1 4 0


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    PDF 2SB1555O --140V 2SD2384 2SB1555

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2384 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1555 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2384 2SB1555 Emit00 2-21F1A 2SD2384

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2384 High Breakdown Voltage : V^ e o = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2384 2SB1555 2-21F1A 2SD2384

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TO SH IBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V@EO - _ 140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


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    PDF 2SB1555 2SD2384 2-21F1A 2SB1555

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


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    PDF 2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855

    2SA1163

    Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
    Text: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry


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    PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266