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    2SD2384 Search Results

    2SD2384 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2384 Toshiba TRANS DARLINGTON NPN 140V 7A 3(2-21F1A) Original PDF
    2SD2384 Toshiba NPN Transistor Original PDF
    2SD2384 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2384 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2384 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2384 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2384 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF
    2SD2384 Toshiba SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR) Scan PDF
    2SD2384A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2384-A Unknown Scan PDF
    2SD2384A Toshiba Silicon NPN Triple Diffused Transistor Scan PDF
    2SD2384B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2384-B Unknown Scan PDF
    2SD2384C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2384-C Unknown Scan PDF

    2SD2384 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SD2384 2SB1555 2-21F1A 2-21F1A 2SB1555 2SD2384 PDF

    2sd2384

    Abstract: 2-21F1A 2SB1555 ic3006
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SD2384 2SB1555 2-21F1A 2sd2384 2-21F1A 2SB1555 ic3006 PDF

    darlington transistor power

    Abstract: 2SB1555 2SD2384
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications


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    -140V 2SD2384 -140V darlington transistor power 2SB1555 2SD2384 PDF

    2sb1555

    Abstract: No abstract text available
    Text: 2SB1555 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1555 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2384 Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original
    2SB1555 2SD2384 2sb1555 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SD2384 2SB1555 2-21F1A PDF

    2SB1555

    Abstract: 2SD2384
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications


    Original
    -140V 2SD2384 -140V 2SB1555 2SD2384 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: 2SB1555 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1555 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2384 Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original
    2SB1555 2SD2384 2-21F1A 2-21F1A 2SB1555 2SD2384 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384 A-8250
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SD2384 2SB1555 2-21F1A 2-21F1A 2SB1555 2SD2384 A-8250 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)


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    2SB1555 2SD2384 PDF

    2SB1555

    Abstract: 2-21F1A 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SB1555 --140V 2SD2384 2SB1555 2-21F1A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2384 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO —140V (Mm.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SD2384 --140V 2SB1555 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1555 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR i <; r 1 *5 <5 <5 O POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : V q e q = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 2 5°C)


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    2SB1555 --140V 2SD2384 PDF

    6075A

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER O PO W ER AM PLIFIER APPLICATIONS • High Breakdown Voltage : Vc e O = 140V (Min.) • Complementary to 2SB1555 2SD2384 M A XIM U M RATINGS (Ta = 25l’C) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


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    2SD2384 2SB1555 B5000-12000, Tc-26 6075A PDF

    tr5v

    Abstract: 2-21F1A 2SB1555 2SD2384
    Text: TOSHIBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SB1555 --140V 2SD2384 tr5v 2-21F1A 2SB1555 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2384 High Breakdown Voltage : V^ e o = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


    OCR Scan
    2SD2384 2SB1555 2-21F1A 2SD2384 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1555O SILICON PNP EPITAXIAL TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIONS • High Breakdown Voltage : V q e O = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta * 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO VCEO -1 4 0 -1 4 0


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    2SB1555O --140V 2SD2384 2SB1555 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2384 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1555 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    2SD2384 2SB1555 Emit00 2-21F1A 2SD2384 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2384 High Breakdown Voltage : V^ e o = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    2SD2384 2SB1555 2-21F1A 2SD2384 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: TO SH IBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V@EO - _ 140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


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    2SB1555 2SD2384 2-21F1A 2SB1555 PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF