2sd880 equivalent
Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-220
2SD880
O-220
2SB834
500mA
300mA
2sd880 equivalent
2SD880, 1.5 power dissipation
2SB834
2SD880
2sD880 TRANSISTOR
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2SB834
Abstract: 2sb834 transistor 2SD880 2sD880 TRANSISTOR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A
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O-220
2SB834
O--220
2SD880
-500mA
-500mA,
2SB834
2sb834 transistor
2SD880
2sD880 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-220
2SD880
O-220
2SB834
500mA
300mA
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2SB834
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SB834 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range
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O-220
2SB834
O-220
-50mA,
-500mA
2SB834
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2SB834
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ̈ ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T
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2SB834
2SB834L
2SB834G
2SB834-x-T60-K
2SB834-x-TA3-T
2SB834-x-TF3-T
2SB834L-x-T60-K
2SB834L-x-TA3-T
2SB834L-x-TF3-T
2SB834G-x-T60-K
2SB834
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2SB834L
Abstract: utc 2sb834L 2SB834 2SB83 2sb834 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T
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2SB834
2SB834L
2SB834G
2SB834-x-T60-K
2SB834-x-TA3-T
2SB834-x-TF3-T
2SB834L-x-T60-K
2SB834L-x-TA3-T
2SB834L-x-TF3-T
2SB834G-x-T60-K
2SB834L
utc 2sb834L
2SB834
2SB83
2sb834 transistor
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UTC2SB834
Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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2SB834
O-126
QW-R204-018
UTC2SB834
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2SB834
Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1
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2SB834
O-220
2SD880
2SB834
2sb834 equivalent
2sd880 equivalent
2SD880
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2SB834
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60
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O-220
2SB834
O-220
-50mA,
-500mA
2SB834
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mx 2sb834
Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO
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O-220
2SA940
2SC2073
2SD880
2SB834
2SD313
BD941
BD949
BD950
BU406
mx 2sb834
2sb834 mx
LB125
2sa940 2sc2073
MJE13005
tip41c pins
tip127 data
REG lm317
IC LM317 DATA SHEET
2SC2073
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2sD880 TO-220
Abstract: No abstract text available
Text: 2SD880 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO
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2SD880
O-220
O-220
2SB834
500mA
300mA
2sD880 TO-220
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2SB834
Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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2SB834
O-220
QW-R203-014
2SB834
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2S8834 NEC
Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
Text: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A
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2sb834 transistor
Abstract: 2SB834
Text: 2SB834 2SB834 TRANSISTOR PNP TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SB834
O-220
-50mA,
-500mA
2sb834 transistor
2SB834
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2sd880 equivalent
Abstract: 2SB834 2SD880 2sD880 TRANSISTOR
Text: PNP 2SB834 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD880 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation(Tc=25°C)
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2SB834
O-220
2SD880
2sd880 equivalent
2SB834
2SD880
2sD880 TRANSISTOR
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2SB834
Abstract: 2SD880
Text: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SB834
O-220
2SD880
2SB834
2SD880
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UTC2SB834
Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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2SB834
O-220
QW-R203-014
UTC2SB834
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 FEATURES z Low Collector -Emitter Saturation Voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A z Complementary to NPN 2SD880
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O-220
2SB834
2SD880
-500mA
-500mA,
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2s0880
Abstract: 2SB83 250880 2SB834 2SD880 e50V 2sD880 TRANSISTOR
Text: ÆfcMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for use in audio frequency power amplifier applications 2SD880 FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf 1 0 V (Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-300 lc= 0.5A * Complememtary to PNP 2SB834
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2SB834
2SD880
2SD880
2s0880
2SB83
250880
2SB834
e50V
2sD880 TRANSISTOR
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2SB834
Abstract: 2SD880 2SB83
Text: V li zi > pnp: m m 2SB834 í 2SB834 ê â ÎD ' S )± f t t e V ' O : V c E ( s a t ) = - l - 0 V ( S * ) ( I c = - 3 A , IB = -0 .3 A ) 3 l' i' m ìlite f t ± ê v>0 2SD 880 t =i > 7” U : P C = 30W (Tc = 25°C) > ? >) iz 4- >3 è t o (Ta = 25°C) JR
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2SB834
2SB834)
2SD880
O-220AB
SC-46
2-10A1A
-50mA,
2SB834
2SB83
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Untitled
Abstract: No abstract text available
Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae
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2SB834
2SD880
-50mA
-500mA
-300mA
-10VIe
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2SB834
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)
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2SB834
2SD880.
-50mA,
20/taec
100v200
2SB834
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Untitled
Abstract: No abstract text available
Text: 2SD880 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ♦Conplei I P lary to 2SB834 ABSOLUTE M AXIM UM RATINGS a t Tam h=25V C haracteristic Collector-Base Voltage Collector-Emitter Voltage
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2SD880
2SB834
500mA
300mA
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2SB834 TOSHIBA
Abstract: No abstract text available
Text: -2SB834 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS A U D IO FR EQ U EN C Y PO W ER A M PLIFIER APPLIC ATIO N S. Unit in mm 0 3 .6 ÍQ .Z • Low Collector Saturation Voltage : v CE(sat)= —1-OV(Max.)at I c = -3 A , ¡3 = -0.3A Collector Power Dissipation
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-2SB834
2SD880.
300x300x2m
200X200X
2SB834 TOSHIBA
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