Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB930A Search Results

    2SB930A Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB930A Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB930A Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB930A) Panasonic PNP Transistor Original PDF
    2SB930A TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB930A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB930A Unknown Cross Reference Datasheet Scan PDF
    2SB930A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB930A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB930A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB930A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB930A Panasonic Silicon Medium Power Transistors Scan PDF

    2SB930A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A


    Original     		PDF 2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A


    Original     		PDF 2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930

    2SD1253

    Abstract: 2SD1253A 2SB930 2SB930A DSA003717
    Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB930 and 2SB930A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 5 V Peak collector current ICP


    Original     		PDF 2SD1253, 2SD1253A 2SB930 2SB930A 2SD1253 2SD1253 2SD1253A 2SB930A DSA003717

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit


    Original     		PDF 2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB0930 2SB930 , 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A −60 V Collector-emitter voltage 2SB0930 (Base open) 2SB0930A


    Original     		PDF 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB930A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .


    Original     		PDF 2SB930A O-252

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB0930, 2SB0930A 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 –60 –5 V ICP –8 A Collector current IC –4 A Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol Collector cutoff


    Original     		PDF 2SB0930, 2SB0930A 2SB930, 2SB930A) 2SB0930 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    2SB930A

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB930A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SB930A O-252 2SB930A

    2SB930

    Abstract: 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 Emitter to base voltage VEBO –5 V Peak collector current ICP –8 A Collector current IC –4 A Collector power TC=25°C dissipation Junction temperature Tj


    Original     		PDF 2SB930, 2SB930A 2SB930 2SB930 2SB930A 2SD1253 2SD1253A

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0930 2SB930 and 2SB0930A (2SB930A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage


    Original     		PDF 2SD1253, 2SD1253A 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


    Original     		PDF MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    2SB930

    Abstract: 2SB930A 2SD1253 2SD1253A
    Text: Power T ransistors 2SB930, 2SB930A 2SB930, 2SB930A Silicon P N P Epitaxial P lanar Type Package Dimensions Pow er Am plifier C om plem entary Pair with 2 S D 1 2 5 3 , 2 S D 1 2 5 3 A Unit ! mm • Features 8,7 • High DC cu rren t gain hFE and good linearity


    OCR Scan     		PDF 2SB930, 2SB930A 2SD1253, 2SD1253A 2SB930 2SB930A 2SD1253 2SD1253A

    panasonic 2SD

    Abstract: 930a STK CLASS D amplifier panasonic 2SB stk power amplifier ic 2sb 55
    Text: Power T ransistors 2SB930, 2SB930A 2SB930, 2SB930A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1253, 2SD 1253A Unit ! 3.7m ax. 8.7 max. • Features • High DC current gain Iife f— * l.^tnax. € .5 max.


    OCR Scan     		PDF 2SB930, 2SB930A 2SB93o, panasonic 2SD 930a STK CLASS D amplifier panasonic 2SB stk power amplifier ic 2sb 55

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1253, 2SD1253A 2SD1253, 2SD1253A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB930, 2SB930A • Features U nit ! mm 8.7 3.7max. max. 1.1 max 6 .5 m a x . • High DC c u rre n t gain Iife and good linearity


    OCR Scan     		PDF 2SD1253, 2SD1253A 2SB930, 2SB930A 2SD1253

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2S897

    Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
    Text: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3


    OCR Scan     		PDF 2SA1647 2SB930A 2SB986 2SA1359 2SA1096 2SB1065 2SA1622 2SA1586 2SA1628 2SB1218A 2S897 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


    OCR Scan     		PDF 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398