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    2SC3392 Price and Stock

    Rochester Electronics LLC 2SC3392-5-TB-E

    BIP NPN 0.5A 50V
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    DigiKey 2SC3392-5-TB-E Bulk 3,806
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    onsemi 2SC3392-6-TB-E

    2SC3392 - Bipolar NPN Transistor, 0.5A 50V '
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    Rochester Electronics 2SC3392-6-TB-E 840 1
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    onsemi 2SC3392-5-TB-E

    2SC3392 - Bipolar NPN Transistor, 0.5A 50V '
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    Rochester Electronics 2SC3392-5-TB-E 98,634 1
    • 1 $0.0758
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    2SC3392 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3392 Kexin NPN Epitaxial Planar Silicon Transistors Original PDF
    2SC3392 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors, High-Speed Switching Applications Original PDF
    2SC3392 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC3392 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3392 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3392 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3392 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3392 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3392 Sanyo Semiconductor HIGH-SPEED SWITCHING APPLICATIONS (Small Signal Transistors) Scan PDF
    2SC3392 Sanyo Semiconductor CP (Chip Pack) Transistors Scan PDF
    2SC3392 Sanyo Semiconductor CP Type Transistors Scan PDF
    2SC3392 Sanyo Semiconductor Small Signal Transistors for High Speed Switching Scan PDF
    2SC3392 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SC3392-AY Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SC3392 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1338

    Abstract: marking ay marking al 2SC3392
    Text: Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT.


    Original     		PDF EN1421A 2SA1338/2SC3392 2SA1338/2SC3392] 2SA1338 2SA1338 marking ay marking al 2SC3392

    Untitled

    Abstract: No abstract text available
    Text: 2SC3392-4 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200


    Original     		PDF 2SC3392-4 Freq300M

    smd marking AY

    Abstract: 2SC3392
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High breakdown voltage : VCEO=50V. 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Large current capacitiy and high fT.


    Original     		PDF 2SC3392 OT-23 100mA 10IB1 -10IB2 smd marking AY 2SC3392

    2SA1338

    Abstract: 2SC3392 ITR05058
    Text: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.


    Original     		PDF ENN1421B 2SA1338/2SC3392 2SA1338 2SC3392 2018B 2SA1338/2SC3392] 2SA1338 2SC3392 ITR05058

    Untitled

    Abstract: No abstract text available
    Text: 2SC3392-7 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.280 h(FE) Max. Current gain.560


    Original     		PDF 2SC3392-7 Freq300M

    2SA1338

    Abstract: 2SC3392 ITR05058
    Text: Ordering number:ENN1421B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT. · Ultrasmall-sized package permitting sets to be smallsized, slim.


    Original     		PDF ENN1421B 2SA1338/2SC3392 2018B 2SA1338/2SC3392] 2SA1338 2SA1338 2SC3392 ITR05058

    Untitled

    Abstract: No abstract text available
    Text: 2SC3392 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.560


    Original     		PDF 2SC3392 Freq300M

    2SA1338

    Abstract: 2SC3392 ITR05058 ITR05059
    Text: 注文コード No.N 1 4 2 1 A 2SA1338 / 2SC3392 三洋半導体データシート ※半導体ニューズ No.1421 とさしかえてください。 2SA1338 / 2SC3392 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高速スイッチング用


    Original     		PDF 2SA1338 2SC3392 2SA1338 100mA, ITR05072 2SC3392 ITR05058 ITR05059

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC6080 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.


    Original     		PDF ENN1421B 2SA1338/2SC3392 2SA1338 2SC6080 2018B 2SA1338/2SC3392] 2SA1338

    Untitled

    Abstract: No abstract text available
    Text: 2SC3392-6 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.200 h(FE) Max. Current gain.400


    Original     		PDF 2SC3392-6 Freq300M

    Untitled

    Abstract: No abstract text available
    Text: 2SC3392-5 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.140 h(FE) Max. Current gain.280


    Original     		PDF 2SC3392-5 Freq300M

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    M338

    Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
    Text: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT


    OCR Scan     		PDF 2SA1338/2SC3392 2SA1338 60fficers M338 J300j nj037 2SC3392 marking al WA1 marking M338 NPN

    MARKING AL

    Abstract: 2SA1338
    Text: ¡ Ordering number EN 1 4 2 1 A J SA S.YO 2SA1338/2SC3392 N0 . 14 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fi>


    OCR Scan     		PDF 2SA1338/2SC3392 2SA1338 1114KI 1338/2S MARKING AL 2SA1338

    Untitled

    Abstract: No abstract text available
    Text: sa \ yo Tables of hFE TR and lDSS(FET)of surface mounting devices and how to indicate type No. (1) General Specification (Package : MCP,CP) S:2SA1338/2SC3392 only SMC P hasno i n d i c a t i o n of h FE an d IDSS cla ssifi c a t i o n . H o w to i n d i c a t e type No.


    OCR Scan     		PDF 2SA1338/2SC3392

    kw2j

    Abstract: MARKING 2J0 2sc2960 a-y
    Text: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller


    OCR Scan     		PDF 250mm trl20 MT930622TR kw2j MARKING 2J0 2sc2960 a-y

    2SC3941A

    Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
    Text: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732


    OCR Scan     		PDF 2SC3142 2SC3735 2SC24Q4 2SC2791 2SC3737 2SC3738 2SC3608 2SC3358 2SC3791 2SC3143 2SC3941A c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737

    2SC3558

    Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
    Text: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD


    OCR Scan     		PDF 2SC3331 2SC2021 2SD1851 2SD2532 2SD1209 2SD1383K 2SD1400 2SD1429 2SD1060 2SC3540 2SC3558 2SD1431 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532

    NEC 3358

    Abstract: 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042
    Text: - 16 0 - m % tt Type No. € Manuf. H 2SC 3326 s Ä 2 2SC4577 2SC 3327 ^ 3K IE 2SC4577 2SC 3329 S $ „ h 2SC 3331 ✓ h 2SC 3332 *" = m m m M Æ 2SC 3330 2SC 3333 M ~$. 2SC 3334 2SC 3335 2SC 3336 r. S JE B 3Ï 2SC 3341 s * 0 ^ X S Ä 2SC 3342 B ÎL B ÎL


    OCR Scan     		PDF 2SC4577 2SD780 2SD1328 2SD2114K 2SD1450 2SC2144S 2SC2634 2SC2390 2SC2458 NEC 3358 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042

    2SA1317

    Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
    Text: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60


    OCR Scan     		PDF 2SA1313 2SA1314 2SA1315 2SA1316 SA1317 SA1318 46K/23K 2SC3401 2SA1347 10K/10K 2SA1317 2SA1348 2SC3331 2sc3345 2SC3398 2SA1319

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:EN4495 _FP202 PNP/NPN Epitaxial Planar Silicon Transistor No.4495 Push-Pull Circuit Applications F eatu res • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. • The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the


    OCR Scan     		PDF EN4495 FP202 2SA1338 2SC3392 250mm2X

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SA1047

    Abstract: No abstract text available
    Text: SA%VO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the


    OCR Scan     		PDF 2SA1781 2SC4639 2SA1753 2SC4577 2SA1839 2SA1881 2SC4983 2SB815 2SD1048 2SB1295 2SA1047

    Untitled

    Abstract: No abstract text available
    Text: Ordering n u m b e r:E N 4 4 9 5 SAXYO No.4495 FP202 PNP/NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications F eatu res • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. • The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the


    OCR Scan     		PDF FP202 FP202 2SA1338 2SC3392 250mm2X 250mm 250mm2 250mm2XQ