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    2SA1338

    Abstract: 2SC3392 ITR05058
    Text: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.


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    PDF ENN1421B 2SA1338/2SC3392 2SA1338 2SC3392 2018B 2SA1338/2SC3392] 2SA1338 2SC3392 ITR05058

    2SA1338

    Abstract: 2SC3392 ITR05058
    Text: Ordering number:ENN1421B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT. · Ultrasmall-sized package permitting sets to be smallsized, slim.


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    PDF ENN1421B 2SA1338/2SC3392 2018B 2SA1338/2SC3392] 2SA1338 2SA1338 2SC3392 ITR05058

    2SA1338

    Abstract: 2SC3392 ITR05058 ITR05059
    Text: 注文コード No.N 1 4 2 1 A 2SA1338 / 2SC3392 三洋半導体データシート ※半導体ニューズ No.1421 とさしかえてください。 2SA1338 / 2SC3392 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高速スイッチング用


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    PDF 2SA1338 2SC3392 2SA1338 100mA, ITR05072 2SC3392 ITR05058 ITR05059

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC6080 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.


    Original
    PDF ENN1421B 2SA1338/2SC3392 2SA1338 2SC6080 2018B 2SA1338/2SC3392] 2SA1338