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    2SD1858 Price and Stock

    ROHM Semiconductor 2SD1858TV2P

    TRANS NPN 32V 1A ATV
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    ROHM Semiconductor 2SD1858TV2R

    TRANS NPN 32V 1A ATV
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    DigiKey 2SD1858TV2R Ammo Pack 2,500
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    ROHM Semiconductor 2SD1858TV2Q

    TRANS NPN 32V 1A ATV
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    Others 2SD1858

    Bipolar Junction Transistor, NPN Type, SIP
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    ROHM Semiconductor 2SD1858

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    Component Electronics, Inc 2SD1858 25
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    2SD1858 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1858 ROHM Medium Power Transistor (32V, 1A) Original PDF
    2SD1858 Various Russian Datasheets Transistor Original PDF
    2SD1858 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1858 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1858 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1858 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1858 ROHM ATR, ATV Transistors Scan PDF
    2SD1858 ROHM ATR / ATV Transistors Scan PDF
    2SD1858TV2P ROHM TRANSISTOR DVR NPN 32V 1A ATV TB Original PDF
    2SD1858TV2P ROHM Medium Power Transistor (32 V, 1 A) Original PDF
    2SD1858TV2Q ROHM Driver Transistor; Package: ATV; Constitution materials list: Packing style: Ammo Box; Package quantity: 2500; Original PDF
    2SD1858TV2Q ROHM Medium Power Transistor (32 V, 1 A) Original PDF
    2SD1858TV2R ROHM TRANSISTOR DVR NPN 32V 1A ATV TB Original PDF
    2SD1858TV2R ROHM Medium Power Transistor (32 V, 1 A) Original PDF

    2SD1858 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1858

    Abstract: 2SB1132 2SB1237 2SD1664 T100 rohm 2sd1664
    Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗


    Original     		PDF 2SD1664 2SD1858 2SD1664 65Max. SC-62 500mA 2SB1132 2SB1237 R0039A 2SD1858 2SB1237 T100 rohm 2sd1664

    transistor Ic 1A datasheet NPN

    Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) transistor Ic 1A datasheet NPN 2SD1858 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗


    Original     		PDF 2SD1664 2SD1858 2SD1664 65Max. SC-62 500mA R1102A

    2SB1237

    Abstract: 2SD1858 Transistor 2SD1858
    Text: Medium Power Transistor 32V, 1A 2SD1858 Dimensions (Unit : mm) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1237 2.5 + − 0.2 0.9 4.4 + − 0.2 6.8 + − 0.2 0.5 + − 0.1 (1) (2) 14.5 + − 0.5 1.0 Structure


    Original     		PDF 2SD1858 500mA 2SB1237 R1010A 2SB1237 2SD1858 Transistor 2SD1858

    2SB1132

    Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
    Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1132 2SA1515S 2SB1237 500mA 2SD1664 2SD1858. 96-120-B12) 2SB1237 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SB1132 transistor

    2SD1858

    Abstract: 2SB1132 2SB1237 2SD1664
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) 2SD1858 2SB1237

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1132 2SA1515S 2SB1237 500mA 2SD1664 2SD1858. 96-120-B12)

    9578

    Abstract: MODEL Q2SD1858 NPN 2SD1858 model Q2SD1858 2SD1858 TR 104
    Text: SPICE PARAMETER 2SD1858 by ROHM TR Div. * 2SD1858 NPN BJT model * Date: 2006/11/15 .MODEL 2SD1858 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1


    Original     		PDF 2SD1858 Q2SD1858 625E-15 30E-15 28E-12 576E-12 55E-12 801E-9 9578 MODEL Q2SD1858 NPN 2SD1858 model 2SD1858 TR 104

    Untitled

    Abstract: No abstract text available
    Text: 2SD1858 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain.390


    Original     		PDF 2SD1858 Freq150M

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SB1237

    Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
    Text: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1


    Original     		PDF 2SA1515S 2SB1237 15Min. 65Max. 2SA1515S 500mA 2SD1858 SC-72 R1010A 2SB1237 TRansistor 2SB1237 data 2SD1858 SC-72

    2SB1237

    Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
    Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +


    Original     		PDF 2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 SC-62 R0039A 2SB1237 2SD1664 2SD1858 SC-72 T100 2SB1132-QR

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2SD1225M

    Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
    Text: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm


    OCR Scan     		PDF 2SD1225M 2SD1858 150mV 500mA) 2SB909M/2SB12371 2SB909M, 2SB1237. 2SD1225M/2SD1858 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9

    Transistor 2SD1858

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s 1) (Ic / I b 2) • E x te r n a l dim ensions (Units: mm) Low VcE(sat) = 0.15V (typical). 2SD1664 2SD1858 = 5 0 0 m A /5 0 m A ) 6 .8 ± 0 2 C om plem ents the e+ 0 .2 5-0.1


    OCR Scan     		PDF 2SD1664 2SD1858 2SD1664 SC-62 Ta--25 2SD1664) 2SD1858) Transistor 2SD1858

    2SD1858

    Abstract: Transistor 2SD1858
    Text: 2SD1858 Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • • large power in a compact package: Pc = l W low collector saturation voltage, typically V CE(sat) = 0.15 V at Iq/I b = 500 mA/50 mA • complementary pair with 2SB1237


    OCR Scan     		PDF 2SD1858 2SB1237 2SD1858 Transistor 2SD1858

    2SB1237

    Abstract: 2sB1237 transistor 2sb transistor Transistor 2SD1858
    Text: 2SB1237 Transistor, PNP Features • available in ATV TV2 package • high power: Pq = 1W • low collector saturation voltage, typically VCE sat = -0.2 V at lc/lB = -500 mA/-50 mA • complementary pair with 2SD1858 Applications • medium power amplifier


    OCR Scan     		PDF 2SB1237 A/-50 2SD1858 2SB1237 2SB1237A 2sB1237 transistor 2sb transistor Transistor 2SD1858

    2SD1225

    Abstract: b 1237 ltlc
    Text: N "7 > y £ 2SD1225M/2SD1858 /T r a n s is to r s 2SD1225M 2SD1858 • x t ° 2 * y 7 ^ 7 ‘ U - :H fê N P N y V 3 > b 7 > y Z $ Epitaxial Planar NPN Silicon Transistors ^ t f ^Jiltëlffl/M edium Power Amp. • ^ i-Jfi^ iiE l/D im en sio n s Unit : mm


    OCR Scan     		PDF 2SD1225M/2SD1858 2SD1225M 2SD1858 2SD1225 b 1237 ltlc

    ATIC 59 C1

    Abstract: e01n
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low VcE(sat) = 0.15V (typical). (I c / I b = 500m A/50m A) 2) Complements the 2SB 1132/2SB1237. •S tru ctu re Epitaxial planar type


    OCR Scan     		PDF 2SD1664 2SD1858 1132/2SB1237. 2SD1858 O-220, 0Dlb713 O-220FN O-220FN O220FP ATIC 59 C1 e01n

    2SD1878

    Abstract: 2SB1240 2SD1853 2SD1855A 2SD1877 2SD188 2SD1851 2SD1852 2SD1854 2SD1855
    Text: - 270 - <Ta=25"C, *EPÌÌTc=25'C fi <3 & Vq r o V) 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 2SD1858 2SD1859 2SD1860 2SD1861 2SD1862 2SD1863 2 SDÌ8 64 2SD1865 2SD1866 2SD1867 2SD1868 2SD1869 2SD1870 2SD1876 2SD1877 2SD1878 2SD1879


    OCR Scan     		PDF 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 12ECB, 2SD1867 2SD1878 2SB1240 2SD1853 2SD1877 2SD188 2SD1851 2SD1854

    Untitled

    Abstract: No abstract text available
    Text: 2SB1237 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA MEDIUM POWER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Features. * Low VCE,;^, , VCE^ggjj =-0.2V Typ.) (Ic/Ib=-500mA/-50mA) * Complement to 2SD1858 ABSOLUTE M AXIMUM RATINGS at Tinr*=25°C


    OCR Scan     		PDF 2SB1237 -500mA/-50mA) 2SD1858 10Ctao -50uA 100mA -500mA -50mA -50mA,

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


    OCR Scan     		PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

    2sb1237

    Abstract: No abstract text available
    Text: ROHM 4GE CO L T D D • TflS ûW |Q 9 M S B1RHI1 2SB909M/2SB1237 7 = 2 7 -2 J h 7 > V ^ 5 / T ransistors " 2S! DÜ QS S 0 3 1 77 ^ ^ U“ ^ PNP V U a > K 7 > V 7 ^ /M edium Power Amp. Epitaxial Planar PNP Silicon Transistors ' ÿ f-J f^ ^ H /D im e n s io n s Unit : mm


    OCR Scan     		PDF 2SB909M/2SB1237 2SD1225M/2SD1858 2SD1225M, 2SD1858. 2sb1237

    2SB909M

    Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
    Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p


    OCR Scan     		PDF 2SA937AMLN 2SC2021MLN 2SA937AM 2SA1547A 2SC2021M 2SC4010 2SC4776M 2SC4778 2SA874M 2SA1548 2SB909M 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2Sc4776 2SB1130