marking lt

Abstract: 2SD2028 IC 2803
Contextual Info: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage

EN2803

Contextual Info: Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions • With Zener diode 11±3V between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage.

2SB1347

Abstract: 2SD2029 SS 109
Contextual Info: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)

ZENER DIODE 5v CAPACITY

Abstract: SMD ZENER DIODE smd zener diode 5v SOT-23 smd zener diode 6v zener 6v diode smd zener diode 5v smd zener smd diode br "Zener Diode" Diode LT 450
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SD2028 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacity. 0.55 With Zener diode 11±3V between collector and base. 2 +0.1 0.95-0.1

2SB1347

Abstract: 2SD2029
Contextual Info: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier

2SB1346

Abstract: 2SD2027
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1346 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2027 APPLICATIONS

toshiba 2sd425

Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
Contextual Info: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312

Contextual Info: ROHM CO LTD 7fl20ciclcl 0 0 0 b 0 3 4 1 H R H H 4GE D N 7 > y 7s $ / J ransistors 2SD2023 2SD2023 - 7=33-11 =.W &k% Tf\s—ï f à NPN '> U = l> h 7 > V ^ ^ 1g ;ilil£ti:ftiiliM /L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor

Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V

2SD2025

Abstract: 2SB1344
Contextual Info: $ /T ra n s is to rs h7 > y ^ 2SD2025 2SD2025 1.1? $ % y 7 Jls7° Is — NPN v h 7 > yZ ? ^ - U > h > r a Epitaxial Planar NPN Silicon Transistor (Darlington) l i S l ^ i l ' l i f f l / L o w Freq. Power Amp. • \ti£[li]/Dim ensions (U n it: mm) 2) ? > / ' * - ? ' - f i - K r t i S o

2SB1347

Abstract: 2SD2029 20 A class b power transistors current gain
Contextual Info: Power Transistors 2SD2029 2SD2029 Silicon Trip le -D iffu se d Planar Type P a c k a g e D im e n s io n s H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir with 2 S B 1 3 4 7 U n it 1 m m 2 0 .5 m a x ._ j • F e a tu re s 5.3max. 3.0 4 • V ery g o o d lin earity of D C c u r re n t gain hFE

Contextual Info: Power T ransistors 2SB1347 2SB1347 Sipcon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2029 •Features • V ery good linearity of DC c u rre n t gain • Wide area of safety operation ASO Package Dimensions U nit : mm

2SD2023

Abstract: transistor adaa 2SB1033
Contextual Info: h 7 > ÿ X ^ / T ransistors 2SD2023 2SD2023 H g lÉ I f c 7 ° U - ^ N P N v 'j3 > h 7 >V^^ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor x tiiH /D im e n s io n s Unit: mm 1) V ce (sat) VcE(sat)=0.3V (Typ.) le / I b =2A/0.2A 2) ¡s-2si^süiii$ hFE

EN2803

Abstract: 2SD2028
Contextual Info: Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions • With Zener diode 11±3V between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage.

Contextual Info: 2SD2023 /Transistors 2SD2023 '> • ; = ! > h 7 > y ^ ^ npn Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • ^ ff^ & H /D im e n s io n s Unit: mm • 1) VCE (sat) 'o 4 . 5 + 0.2 VcE(sat)=0.3V (Typ.) Ic / I b =2A /0.2A 2) hFE tlX l ' 5 0

2SB1347

Abstract: 2SD2029
Contextual Info: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

D403

Abstract: 2SD2025 D-403 94L-969-D403 94L-374-B403
Contextual Info: Transistors 2SB1344 2SD2025 94L-374-B403 (94L-969-D403) 299

D403 power transistor

Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
Contextual Info: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.

Contextual Info: 2SD2027 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2

2SB1344

Abstract: 2SD2025
Contextual Info: SavantIC Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SD2025 APPLICATIONS ·For low frequency power amplifier and

2SB1347

Abstract: 2SD2029
Contextual Info: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V

2SD2023

Abstract: 2SB1033
Contextual Info: SavantIC Semiconductor Product Specification 2SD2023 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB1033 ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters

Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −160

2sB1344

Abstract: 2SD2025
Contextual Info: Inchange Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON ・Complement to type 2SD2025 APPLICATIONS ・For low frequency power amplifier and