2SD2219 Search Results

2SB1468

Contextual Info: Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219] · Micaless package facilitating mounting.

SD2219

Abstract: 2SB14 2SB1468 2SD2219
Contextual Info: Ordering number: EN3364 2SB1468/2SD2219 Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications A pplications • Relay drivers, high-speed inverters, converters,etc. F eatures • Micaless package facilitating mounting • Low collector-to-emitter saturation voltage : VcE sat ——0.5V(PNP), 0.4V(NPN) max.

Contextual Info: Ordering number:ENN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219]

Contextual Info: 2SD2219S Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)12 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.140 h(FE) Max. Current gain.280

Contextual Info: 2SD2219Q Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)12 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.140

Contextual Info: 2SD2219R Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)12 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.200

2sb1468

Abstract: 2SD2219
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1468 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -30V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) ·Complement to Type 2SD2219

Contextual Info: ¡O rderin g number: EN3364 2SB1468/2SD2219 No.3364 PNP/NPN Epitaxial Planar Silicon Transistors SAMYO, i I 30V/8A High-Speed Switching Applications A pplications • Relay drivers, high-speed inverters, converters,etc. F eatures • Micaless package facilitating mounting

Contextual Info: 2SD2219 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)12 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.280

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

2sd2229

Abstract: 2SD2191 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2192
Contextual Info: - 284 - m *+ 1-1 /u ^ u«UbU _ V 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2191 2SD2192 2SD2193 2SD2198 2SD2199 2SD2200 2SD2201 tfiT t&T t&T tar O— A O— A □— A Bi = # Hi# =#* — 2SD2203 2SD2209 2SD2210 2SD2213 2SD22U 2SD2215 2SD2215A

SB1232

Abstract: SD1238 2SD1237 10102D b1271
Contextual Info: sa U y o L o w S a t u r a t ion Voltage Ser ies T0-220, MF, ML Package A p p l i c a t i o n s ♦ R e l a y drivers. » H i g h - s p e e d inverters. »Converters. * High-current F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * F a s t

2SB1496

Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Contextual Info: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508