2SB1467
Abstract: No abstract text available
Text: Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] · Micaless package facilitating mounting.
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EN3363
2SB1467/2SD2218
2SB1467/2SD2218]
O-220ML
2SB1467
2SB1467
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] · Micaless package facilitating mounting.
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ENN3363
2SB1467/2SD2218
2SB1467/2SD2218]
2SB1467
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Untitled
Abstract: No abstract text available
Text: [ Ordering number: EN3363 I SA\YO ' I 2SB1467/2SD2218 No.3363 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A Switching Applications Applications • Relay drivers, high-speed inverters, converters Features • Micaless package facilitating mounting • Low collector-to-emitter saturation voltage: VcE sat = • •0.5V(PNP), 0.4V(NPN) max
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EN3363
2SB1467/2SD2218
2SB1467
cn707b
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25B14
Abstract: 2SB1467 2SD2218 SB146
Text: Ordering number: EN3363 2SB1467/2SD2218 No.3363 PN P/N PN Epitaxial P lan ar Silicon Transistors G eneral H igh-current Switching Applications A pplications • Relay drivers, high-speed inverters, converters F e a tu r e s • M icaless package facilitating m ounting
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EN3363
2SB1467/2SD2218
2SB1467
25B14
2SB1467
2SD2218
SB146
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2SB1496
Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Text: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508
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2SB1464
2SB1465
-200u
2SB1466
2SB1467
2SB1468
2SB1469
2SD2275
2SB1502
2SD2276
2SB1496
2SB1516
2sb148
2SB1467
2SB1468
2SB1470
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Untitled
Abstract: No abstract text available
Text: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )
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2SA1470
T0220ML
2SA1471
2SB1134
2S02176
2SD2261
2SB888
2SD1111
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2SD313
Abstract: transistor 2sC3781 2SD1159 2sa128
Text: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used
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T0-220ML
T0-220
2SA1469
2SC3746
2SA1470
2SC3747
2SA1471
2SC3748
2SB1134
2SD1667
2SD313
transistor 2sC3781
2SD1159
2sa128
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SB145
Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Text: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used
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T0-220ML
T0-220
2SA1469
2SC3746
2SA1470
2SC3747
2SA1471
2SC3748
2SB1134
2SD1667
SB145
2sd1159
hc/2SB824 transistor
2sb507 sanyo
2Sd1666
2sa128
2SB824 transistor
2sd313
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SA1622
Abstract: 2SA1699 2sa1015 2SA1586 2s8817 2SA1162 2SA1638 2SA1782 2SA1018 2SB1198K
Text: m £ Type No. 2SA 1614 2SA 1615 , 2SA 1615Z 2SA 1616 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1617 16181619 1620 1621 ^ 1622 ' 1623 1624 1625 1626 1628 1629 1630 , 1631 1632 1633 ' 1634 1635 • 1636 1637
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2SA1772
2SA1641
2SB936
RN2206
UN4116
2SA1781
2SA1162
2SA812
2SA1022
2SA1622
2SA1699
2sa1015
2SA1586
2s8817
2SA1638
2SA1782
2SA1018
2SB1198K
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2sa128
Abstract: No abstract text available
Text: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching
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O-220
2SB903
2SD1212
2SB1467
2SD2218
2SB1468
2SD2219
2SB1268
2SD1904
T0-220MF
2sa128
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2SB1205
Abstract: 2S81119 2Sk222 2sa128
Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf
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TQ220ML
T0220ML
T03PB
2SB1205
2S81119
2Sk222
2sa128
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2SC3253
Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Text: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t
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TQ-220,
2SB1267
2SD1903
T0-220MF
2SB919
2SD1235
T0-220
2SB903
2SD1212
2SB1467
2SC3253
2SD1212
2SD2218
SC74
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PDF
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2SB1013
Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Text: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020
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2SA1160
2SB1068
2SB976
2SB1426
2SA1020
2SB1116
2SB621
2SB1Q44M
2SB1134
2SB1094
2SB1013
2SA934
2sb1370
nec 1026
2S897
2SB1067
2SD2238
2SA1243
2SB1041
2SB564
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2SB1267
Abstract: No abstract text available
Text: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te
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2SB986
T0126
2SD1348
2SB1141
T0126ML
2SD1236L
T0220
2SB921L
2SB1267
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