MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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2SC3953
Abstract: TRANSISTOR T0220 2SC3597
Text: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)
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HPA72R*
T03PBL
HPA100R
2SC4256
2SC4257
2SC3675
2SC3676
2SC4450
2SC3953
TRANSISTOR T0220
2SC3597
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2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
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2SC3151
T03PB
10to40
2SC3152
2SC3I53
2SC3277
2sc3153
2SJ335
transistor 2sc4460
2SC4427
2sc4460
2SC3448
2SC3449
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2sk 2056
Abstract: No abstract text available
Text: 2SK1448 AP A d v a n c e d P e rfo rm a n c e Series V dss = 4 5 0 V 2056 N Channel Power M OSFET F eatu res • Low ON-state resistance. • Very high-speed Switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1448
7151JN
X-6827
2sk 2056
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transistor d 1825 7c
Abstract: BU406
Text: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output
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D00S4flti
BU406.
O-220AB
BU406
BU407
1S-126A
IS-20MA
transistor d 1825 7c
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TRANSISTOR T0220
Abstract: 2SC4429 2sc3990
Text: S WI TC HI NG POWER TRANSISTOR F e a t u r e s ☆ Short switching time ☆ High br ea kdown voltage ☆ Wide ASO ☆ High reliability because of planar type ate H i g h - S p e e d Type U s e ☆Switching regulators ☆Motor control MBIT P r o c e s s Package
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Tc-25t!
Ratings/Ta-25
2SC4219
2SC4220
2SC4105
2SC4106
2SC4107
2SC4164
2SC4160
2SC4161
TRANSISTOR T0220
2SC4429
2sc3990
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Untitled
Abstract: No abstract text available
Text: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.
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1222C
1S-126A
IS-20MA
IS-313
IS-313A
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SD-1 diode
Abstract: sd 150 zener diode
Text: s o 00 3> Continued from preceding page. -C O Classified by package and arranged in order of increasing Vq j o I(\ Absolute Maximum Ratings/Ta=25“C Case Applications VCBO VCBO VEBO IC [V] [V] [V] [A] PC I Ij VCB *TC=25*C [•C] [V] [W] ICEO (max [A] fT
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250im2x0.
T0220
T03PB
I03PB
T03FB
T03PB
I03FB
SD-1 diode
sd 150 zener diode
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transistor T K 2056
Abstract: K 2056 transistor transistor K 2056
Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage
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SS2SC4271
T0126
300mA,
100mA)
SS2SC4272
1S-126A
IS-20MA
transistor T K 2056
K 2056 transistor
transistor K 2056
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2SD1401
Abstract: 2042A 5033K
Text: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed
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2SD1401
1268B
1S-126A
IS-20MA
IS-313
IS-313A
2SD1401
2042A
5033K
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2SC3998
Abstract: using of damper in Horizontal Output Transistor 6-10T 2SC4891 transistor 2SC3998 2sc3997 2sc3996 IT0-22 2sc5042
Text: SAf/YO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 ajc S t i - u c t u r e a n d Structure patterned with a large number of units consisting of base island £nd emitter region as shown
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200Aim
Dampe500
min90
2SC3894,
2SC3895
2SC3896
2SC3897,
2SC4770
2SC4923
2SC4924.
2SC3998
using of damper in Horizontal Output Transistor
6-10T
2SC4891
transistor 2SC3998
2sc3997
2sc3996
IT0-22
2sc5042
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horizontal deflection
Abstract: No abstract text available
Text: TV/CRT Display Application Transistors II Absolute maximum ratings Package Device Application type VCBO (V) VcEO (V) Vebo (V) ic (A) m Electrical characteristics (Ta = 25 deg. C) Tj Pc VcEfMfj @ ! c - I b (deg. C) VcEjsat) (V) tire @ Vce ic tf max tc (A)
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2SD1396
T03PB
Color800
2SC4125
T03PML
2SC4890
2SC4891
2SC3995
horizontal deflection
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2sb1303
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications
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2SB1231,
2SB1232,
2SB1303,
2SB1323,
2SB1325,
2SB1346,
2SC4002,
2SC4003,
2SD1841,
2SD1842,
2sb1303
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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TO-126LP
Abstract: No abstract text available
Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle
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transistor 2SC3998
Abstract: No abstract text available
Text: SILICON TRANSISTORS FOR TV/VTR USE VERY HIGH-DEFINITION DISPLAY HORIZONTAL DEFLECTION OUTPUT, VIDEO OUTPUT APPLICATIONS : New product Classified by package and arranged in order of increasing P q . Minus sign for PNP is omitted due to space limitations.
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2SC3636
2SC3637
2SC3638
2SC3642
2SC3643
2SC3644
2SC4440
2SC4441
T0220ML
O220ML
transistor 2SC3998
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN1983A SB200-05H No.i983A Schottky B arrier Diode Twin Type • Cathode Common 50V, 20A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers) F e a tu re s • Low forward voltage (Vp max = 0.55V)
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EN1983A
i983A
SB200-05H
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gutre
Abstract: 2SK1449
Text: Ordering n u m b e r:EN 3452 2SK1449 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum Ratings at Ta = 25°C Drain to Source Voltage VdSS Gate to Source Voltage
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EN3452
2SK1449
gutre
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2SB827
Abstract: No abstract text available
Text: Ordering number: EN688G 2 S B 8 2 7 /2 S D 1 0 6 3 PNP/NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications Use : U n i v e r s a l h ig h c u r r e n t s w i tc h i n g as s o l e n o i d d r i v i n g , h ig h sp e e d i n v e r t e r and c o n v e r t e r .
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EN688G
2SB827/2SD1063
2SB827
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2SC3644
Abstract: 777T
Text: O rd e rin g n u m b e r: EN 1628C N0.1628C 2SC3644 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition Display Horizontal Deflection Output Applications i oi i— Features • High reliability Adoption of HVP process . • High speed. • High breakdown voltage.
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1628C
l628C
2SC3644
777T
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2SD439
Abstract: 2SB559 transistor af 126 JIS G 3201
Text: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.
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2SB559
2SD439
0DGB752
transistor af 126
JIS G 3201
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2SC930
Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Text: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.
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2SC930
2SC930SPA
2SC930NP
0DGB752
transistor 2SC930
2SC930NP
2SC2839
2SC930 D
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EN3572
Abstract: 2SK1434
Text: O rdering n u m b e r:E N 3 5 7 2 2SK1434 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s a t Ta = 25°C Drain to Source Voltage
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EN3572
2SK1434
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ce 2826 ic
Abstract: No abstract text available
Text: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)
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HPA100R
100ns)
cH707k>
GD2G44G
ce 2826 ic
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