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    2SD2385 Search Results

    2SD2385 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2385 Toshiba TRANS DARLINGTON NPN 140V 8A 3(2-21F1A) Original PDF
    2SD2385 Toshiba NPN Transistor Original PDF
    2SD2385 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2385 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2385 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2385 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2385 Toshiba NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SD2385 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR) Scan PDF
    2SD2385A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2385A Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF
    2SD2385(-A..-C) Unknown Darl NF/S-L, Silicon NPN-darlington transistor Scan PDF
    2SD2385B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2385C Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SD2385 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1556

    Abstract: No abstract text available
    Text: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Maximum Ratings (Tc = 25°C) Characteristics Symbol


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    PDF 2SB1556 2SD2385 2-21F1A 2SB1556

    2sb1556

    Abstract: No abstract text available
    Text: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    PDF 2SB1556 2SD2385 2-21F1A 2sb1556

    2SB1556

    Abstract: 2SD2385
    Text: SavantIC Semiconductor Product Specification 2SB1556 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplifier applications


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    PDF 2SB1556 2SD2385 -140V; 2SB1556 2SD2385

    2SB1556

    Abstract: 2SD2385 2-21F1A
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics


    Original
    PDF 2SD2385 2SB1556 2-21F1A 2SB1556 2SD2385 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2385 2SB1556 2-21F1A

    hfe1

    Abstract: 2SB1556 2SD2385 high hfe transistor 8aic
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 APPLICATIONS ·Designed for power amplifier applications


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    PDF -140V 2SD2385 -140V hfe1 2SB1556 2SD2385 high hfe transistor 8aic

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2385 2SB1556 2-21F1A 2-21F1A 2SB1556 2SD2385

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    PDF 2SD2385 2SB1556 2-21F1A 2-21F1A 2SB1556 2SD2385

    2SB1556

    Abstract: 2SD2385 high hfe transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 APPLICATIONS ·Designed for power amplifier applications


    Original
    PDF -140V 2SD2385 -140V 2SB1556 2SD2385 high hfe transistor

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    a1000n

    Abstract: common emitter amplifier 2-21F1A 2SB1556 2SD2385
    Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1556 2SD2385 a1000n common emitter amplifier 2-21F1A 2SB1556 2SD2385

    2SB1556

    Abstract: 2-21F1A 2SD2385
    Text: TO SH IBA 2SB1556 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR High Breakdown Voltage : V@EO - _ 140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO VCEO


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    PDF 2SB1556 2SD2385 2SB1556 2-21F1A 2SD2385

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q e q = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO


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    PDF 2SB1556 --140V 2SD2385

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TO SHIBA TRANSISTOR 2SB1556 nRi SILICON PNP EPITAXIAL TYPE D AR LIN G TO N POWER TRANSISTOR O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2385 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1556 2SD2385

    Untitled

    Abstract: No abstract text available
    Text: 2SD2385 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2385 2SB1556

    TC-2B

    Abstract: No abstract text available
    Text: g g Q SILICON PNP EPITAXIAL TYPE DARLINGTON POWER O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : Vc e O = -140V (Min.) Complementary to 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO v CEO v EBO ic CHARACTERISTIC Collector-Base Voltage


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    PDF -140V 2SD2385 Vol000-12000, 2SB1556 TC-2B

    2SB1556

    Abstract: 2-21F1A 2SD2385
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1556 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1556 --140V 2SD2385 2SB1556 2-21F1A

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : Vqeo = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


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    PDF 2SD2385 2SB1556 2-21F1A 2-21F1A 2SB1556 2SD2385

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER O PO W ER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V(Min.) Complementary to 2SB1556 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VfiBO VCEO VEB0 !C !B Collector Power Dissipation (Tc = 25°C) PC


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    PDF 2SD2385 2SB1556

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2385 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1556 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2385 2SB1556 2-21F1A 2SB1556 2SD2385

    2SD2385

    Abstract: 2-21F1A 2SB1556
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q ^o = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO


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    PDF 2SD2385 2SB1556 2SD2385 2-21F1A 2SB1556

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266