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    2SB1556 Search Results

    2SB1556 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1556 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1556 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1556 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1556 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1556 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1556 Toshiba TRANS DARLINGTON PNP 140V 8A 3(2-21F1A) Scan PDF
    2SB1556 Toshiba Silicon PNP transistor for power amplifier applications Scan PDF
    2SB1556A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1556A Toshiba TRANS DARLINGTON PNP 140V 8A 3(2-21F1A) Scan PDF
    2SB1556B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1556B Toshiba TRANS DARLINGTON PNP 140V 8A 3(2-21F1A) Scan PDF
    2SB1556C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1556C Toshiba TRANS DARLINGTON PNP 140V 8A 3(2-21F1A) Scan PDF

    2SB1556 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1556

    Abstract: No abstract text available
    Text: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Maximum Ratings (Tc = 25°C) Characteristics Symbol


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    PDF 2SB1556 2SD2385 2-21F1A 2SB1556

    2sb1556

    Abstract: No abstract text available
    Text: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    PDF 2SB1556 2SD2385 2-21F1A 2sb1556

    2SB1556

    Abstract: 2SD2385
    Text: SavantIC Semiconductor Product Specification 2SB1556 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplifier applications


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    PDF 2SB1556 2SD2385 -140V; 2SB1556 2SD2385

    2SB1556

    Abstract: 2SD2385 2-21F1A
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2385 2SB1556 2-21F1A 2SB1556 2SD2385 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2385 2SB1556 2-21F1A

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2385 2SB1556 2-21F1A 2-21F1A 2SB1556 2SD2385

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SD2385 2SB1556 2-21F1A 2-21F1A 2SB1556 2SD2385

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    a1000n

    Abstract: common emitter amplifier 2-21F1A 2SB1556 2SD2385
    Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1556 2SD2385 a1000n common emitter amplifier 2-21F1A 2SB1556 2SD2385

    2SB1556

    Abstract: 2-21F1A 2SD2385
    Text: TO SH IBA 2SB1556 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR High Breakdown Voltage : V@EO - _ 140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO VCEO


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    PDF 2SB1556 2SD2385 2SB1556 2-21F1A 2SD2385

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q e q = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO


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    PDF 2SB1556 --140V 2SD2385

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2385 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 O POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : V^EO —140V (Mm.) • Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2385 --140V 2SB1556

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TO SHIBA TRANSISTOR 2SB1556 nRi SILICON PNP EPITAXIAL TYPE D AR LIN G TO N POWER TRANSISTOR O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2385 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1556 2SD2385

    2SB1556

    Abstract: 2-21F1A 2SD2385
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1556 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1556 --140V 2SD2385 2SB1556 2-21F1A

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : Vqeo = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


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    PDF 2SD2385 2SB1556 2-21F1A 2-21F1A 2SB1556 2SD2385

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER O PO W ER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V(Min.) Complementary to 2SB1556 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VfiBO VCEO VEB0 !C !B Collector Power Dissipation (Tc = 25°C) PC


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    PDF 2SD2385 2SB1556

    2-21F1A

    Abstract: 2SB1556 2SD2385
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2385 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1556 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2385 2SB1556 2-21F1A 2SB1556 2SD2385

    2SD2385

    Abstract: 2-21F1A 2SB1556
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q ^o = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO


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    PDF 2SD2385 2SB1556 2SD2385 2-21F1A 2SB1556

    2SA1163

    Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
    Text: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry


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    PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    TC-2B

    Abstract: No abstract text available
    Text: g g Q SILICON PNP EPITAXIAL TYPE DARLINGTON POWER O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : Vc e O = -140V (Min.) Complementary to 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO v CEO v EBO ic CHARACTERISTIC Collector-Base Voltage


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    PDF -140V 2SD2385 Vol000-12000, 2SB1556 TC-2B