Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD2440 Search Results

    2SD2440 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2440 Toshiba NPN Transistor Original PDF
    2SD2440 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2440 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2440 Toshiba Silicon NPN transistor for switching applications Scan PDF
    2SD2440 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
    2SD2440BL NEC Silicon NPN Transistor Scan PDF

    2SD2440 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2440

    Abstract: No abstract text available
    Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)


    Original     		PDF 2SD2440 2SD2440

    D2440

    Abstract: 2SD2440
    Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)


    Original     		PDF 2SD2440 D2440 2SD2440

    Untitled

    Abstract: No abstract text available
    Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)


    Original     		PDF 2SD2440 2-16F1A

    2SD2440

    Abstract: D2440
    Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V · Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V · High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)


    Original     		PDF 2SD2440 2SD2440 D2440

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    2SD2440

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) • Low Saturation Voltage VCE(sat) = 1.2'V (MAX.) (IC = 5A , IB = 1A) • • High Speed : tf = 1 /us (TYP.) (Ic = 5 A, IB = ±0.5 A)


    OCR Scan     		PDF 2SD2440 2SD2440

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 0 3 . 6 ± 0.2 ;15.8 ± 0 .5^


    OCR Scan     		PDF 2SD2440

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage • Low Saturation Voltage • High Speed • High DC C urren Gain VCBO = !00V MIN. V e BO = 18V (MIN.) v CE(sat) = l-2V (MAX.) (IC = 5A, I b = 1A) t f = l^ s (TYP.) d c = 5A, Iß = ± 0 .5 A )


    OCR Scan     		PDF 2SD2440 100ms)

    2SD2440

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 15.810.5 , Q¡3.610.2


    OCR Scan     		PDF 2SD2440 2SD2440

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm SWITCHING APPLICATION • High Breakdown Voltage: 15 .8 ± 0 -5 ^ # 3 .6 ± 0.2 V q b o —100V MIN. 3.5 VE B 0 = 18V (MIN.) • Low Saturation Voltage VCE(sat) = l-2V (MAX.)


    OCR Scan     		PDF 2SD2440 --100V

    2SD2440

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2440 TO SHIBA TRANSISTOR SWITCHING APPLICATION • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) Low Saturation Voltage VCE(sat) = 1-2 V (MAX.) (IC = 5A, IB = 1A) High Speed : tf = 1 f a (TYP.) (Ic = 5 A, IB = ±0.5 A)


    OCR Scan     		PDF 2SD2440 961001EAA2' 2SD2440

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266