2SD2440
Abstract: No abstract text available
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
2SD2440
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D2440
Abstract: 2SD2440
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
D2440
2SD2440
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Untitled
Abstract: No abstract text available
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
2-16F1A
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2SD2440
Abstract: D2440
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V · Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V · High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
2SD2440
D2440
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N
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2SD1160
2SD1140
2SD1224
2SD1508
2SD1631
2SD1784
2SD2481
2SB907
2SD1222
2SD1412A
transistor
power transistor npn to-220
PNP POWER TRANSISTOR TO220
transistor PNP
damper diode
Darlington transistor
2SD2206A
power transistor
npn darlington
transistor TO220
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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2SD2440
Abstract: No abstract text available
Text: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) • Low Saturation Voltage VCE(sat) = 1.2'V (MAX.) (IC = 5A , IB = 1A) • • High Speed : tf = 1 /us (TYP.) (Ic = 5 A, IB = ±0.5 A)
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2SD2440
2SD2440
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 0 3 . 6 ± 0.2 ;15.8 ± 0 .5^
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2SD2440
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage • Low Saturation Voltage • High Speed • High DC C urren Gain VCBO = !00V MIN. V e BO = 18V (MIN.) v CE(sat) = l-2V (MAX.) (IC = 5A, I b = 1A) t f = l^ s (TYP.) d c = 5A, Iß = ± 0 .5 A )
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2SD2440
100ms)
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2SD2440
Abstract: No abstract text available
Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 15.810.5 , Q¡3.610.2
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2SD2440
2SD2440
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm SWITCHING APPLICATION • High Breakdown Voltage: 15 .8 ± 0 -5 ^ # 3 .6 ± 0.2 V q b o —100V MIN. 3.5 VE B 0 = 18V (MIN.) • Low Saturation Voltage VCE(sat) = l-2V (MAX.)
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2SD2440
--100V
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2SD2440
Abstract: No abstract text available
Text: TOSHIBA 2SD2440 TO SHIBA TRANSISTOR SWITCHING APPLICATION • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) Low Saturation Voltage VCE(sat) = 1-2 V (MAX.) (IC = 5A, IB = 1A) High Speed : tf = 1 f a (TYP.) (Ic = 5 A, IB = ±0.5 A)
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2SD2440
961001EAA2'
2SD2440
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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