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    2SD858 Search Results

    2SD858 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD858 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD858 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD858 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD858 Unknown Cross Reference Datasheet Scan PDF
    2SD858 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD858 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD858 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD858 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD858 Panasonic Si NPN triple diffused planar. AF power amplifier. Scan PDF
    2SD858A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD858A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD858A Unknown Cross Reference Datasheet Scan PDF
    2SD858A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD858A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD858A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD858A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD858A Panasonic Si NPN triple diffused planar. AF power amplifier. Scan PDF
    2SD858B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD858B Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD858B Unknown Cross Reference Datasheet Scan PDF

    2SD858 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB763

    Abstract: 2SD858
    Text: SavantIC Semiconductor Product Specification 2SB763 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD858 ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SB763 2SD858 2SB763 2SD858 PDF

    2SB763

    Abstract: 2SD858
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB763 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Complement to Type 2SD858 APPLICATIONS


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    2SB763 2SD858 2SB763 2SD858 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    2SD883A

    Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150


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    2SD801 2SD802 2SD803 2SD804 70kHz 2SD805 2SD806 2SD807 2SD808 2SD809 2SD883A 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815 PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 PDF

    2SB701

    Abstract: 2SB773A 2SB773 2SB758A 2SD1033 2SB722 2SB714 2SB756 2SB737 2SB758
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj 120W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 40W 150


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    2SB701 2SB702 2SB702A 2SB703 2SB703A 2SB705 2SD1033 2SD882 2SD889 2SD895 2SB701 2SB773A 2SB773 2SB758A 2SD1033 2SB722 2SB714 2SB756 2SB737 2SB758 PDF

    NPN triple diffused 60V

    Abstract: 9MEE 2SD858 2SD858A SC-65
    Text: 2SD858, 2SD858A 2SD858, 2SD858A '> ij i] > N P N =LM$k%L~f\s — j ~ M / S i N P N Triple Diffused Planar Power Amplifier • 4$ ^ /F e a tu re s • 3 v 9 91h9z Pc • '/'„/Large Pc Iife • i^ 0/G o o d linearity of hFE /Suitable for voltage regulator


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    2SD858, 2SD858A 2SD858 SC-65 Tc-25Â NPN triple diffused 60V 9MEE 2SD858A PDF

    2SD859

    Abstract: 2SD859A 2SB763 2SB763A 2SD858 2SD858A T0220AB
    Text: r PANASONIC INDL/ELEK-CSEMI} h ^ > S > 3 /9 * 75C D | tTBSSSL» □ □ □ T 4 E 1 T ' 3 3 * 1 1 1 2 S D 8 5 8 ,2 S D 8 5 8 A 2SD858,2SD858A NPN E-MffcWLy Is—i ~ M / Si NPN Triple Diffused Planar f i i i l S l S i l i i ' t l f f l / A F Pow er Amplifier


    OCR Scan
    32aSM 2SD858 2SD858A 2SB763, 2SB763A 2SD859 2SD859A 2SB763 2SB763A 2SD858A T0220AB PDF

    2SC2801

    Abstract: 2SD947 2SD549 2SD685 2SD728 2SD1878 2SD869 TOSHIBA 2SC1645 2sd1111 2SD727
    Text: - 226 - m « Type No. * * *t € Manuf. m h SANYO 2SD 891 / fé T 2SD1111 2SD 892 fé T 2SD1U1 2SD 893 fé 2SD1153 T M. TOSHIBA B S NEC 31 HITACHI œ f I FUJITSU fé T MATSUSHITA 2SD892 H ft 2SD549 h ft 2SD716 2SD727 2SD 896 ^ H ft 2SD718 2SD728 2SD 897 S


    OCR Scan
    2SD891 2SD892 2SD1111 2SD1153 2SC1645 2SC1645 2SD985 2SD549 2SD716 2SC2801 2SD947 2SD685 2SD728 2SD1878 2SD869 TOSHIBA 2SD727 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SD818

    Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
    Text: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40


    OCR Scan
    2SD811 2SD812 2SD813 2SD814 2SD814A 2SD818 2SD819 2SD841 zmw42 2SB753 2SD818 2SD844 fst 240 2sb764 2SD859 2SD813 2SD814 2SD814A PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF