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    Panduit Corp 2SD814A-R TX

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    Bristol Electronics 2SD814A-R TX 42,000
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    Panasonic Electronic Components 2SD814-R

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    Bristol Electronics 2SD814-R 18,800 7
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    Quest Components 2SD814-R 15,040
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    Panasonic Electronic Components 2SD814-ARL

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    Bristol Electronics 2SD814-ARL 1,500
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    2SD814 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD814 Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SD814 Panasonic NPN Transistor Original PDF
    2SD814 Panasonic Silicon NPN epitaxial planer type transistor Original PDF
    2SD814 TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-23 Original PDF
    2SD814 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD814 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD814 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD814 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD814 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD814 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD814 Panasonic Si NPN epiaxial planar. High voltage AF low-noise amplifier. Scan PDF
    2SD814A Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SD814A Panasonic Transistor for high breakdown voltage low-frequency and low-noise amplification Original PDF
    2SD814A Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD814A) Panasonic NPN Transistor Original PDF
    2SD814A TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-23 Original PDF
    2SD814A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD814A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD814A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD814A Panasonic Si NPN epiaxial planar. High voltage AF low-noise amplifier. Scan PDF

    2SD814 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814A

    2SD814

    Abstract: XN1507
    Text: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN1507 2SD814 2SD814 XN1507

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A)

    SC-88A npn

    Abstract: 2SD814 XP1507 4600ic
    Text: Composite Transistors XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD814 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP1507 2SD814 SC-88A npn 2SD814 XP1507 4600ic

    2SD0814

    Abstract: 2SD814 XN01507 XN1507
    Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0814(2SD814) x 2 elements +0.1 +0.2 1.1 -0.1


    Original     		PDF XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507

    2SB0792

    Abstract: 2SB0792A 2SB792 2SB792A 2SD0814 2SD814
    Text: Transistor 2SB0792, 2SB0792A 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm +0.2 2.8 –0.3 2SB0792 base voltage 2SB0792A Collector to 2SB0792 –150 V –185


    Original     		PDF 2SB0792, 2SB0792A 2SB792, 2SB792A) 2SD0814 2SD814) 2SB0792 2SB0792 2SB0792A 2SB792 2SB792A 2SD0814 2SD814

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A

    2SD0814

    Abstract: 2SD0814A 2SD814 2SD814A
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD0814 base voltage 2SD0814A Collector to 2SD0814 1.45 0.95 0.95 +0.1


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814 2SD0814A 2SD814 2SD814A

    2SD814

    Abstract: 2SD814A
    Text: Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current


    Original     		PDF 2SD814, 2SD814A 2SD814 2SD814 2SD814A

    2SD814

    Abstract: 2SD814A marking LQ
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF 2SD814 2SD814A OT-23 2SD814 2SD814A marking LQ

    2SB792A

    Abstract: 2SB0792 2SB0792A 2SB792 2SD0814 2SD814 203 transistor
    Text: Transistor 2SB0792, 2SB0792A 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm 0.40+0.10 ñ0.05 • Features Parameter Symbol Collector to 2SB0792 base voltage


    Original     		PDF 2SB0792, 2SB0792A 2SB792, 2SB792A) 2SD0814 2SD814) 2SB0792 2SB792A 2SB0792 2SB0792A 2SB792 2SD0814 2SD814 203 transistor

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Rating Unit VCBO


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A)

    2SD0814A

    Abstract: 2SD814A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A) SC-59 2SD0814A 2SD814A

    2SD0814A

    Abstract: 2SD814A
    Text: Transistors 2SD0814A 2SD814A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0814A 2SD814A) 2SD0814A 2SD814A

    2SD0814

    Abstract: 2SD814 XN01507 XN1507
    Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element Parameter 0 to 0.1 2SD0814(2SD814) x 2 elements ■ Absolute Maximum Ratings


    Original     		PDF XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SD0814A 2SD814A)

    2SB792A

    Abstract: 2SB792 2SD814
    Text: Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 Unit: mm +0.2 2.8 –0.3 2SB792 base voltage 2SB792A Collector to 2SB792 –150 V –185 –150 VEBO –5 V Peak collector current


    Original     		PDF 2SB792, 2SB792A 2SD814 2SB792 2SB792A 2SB792 2SD814

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF 2SD814 2SD814A OT-23 2SD814

    matsushita Transistor hFE CLASSIFICATION Marking

    Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A) matsushita Transistor hFE CLASSIFICATION Marking IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A

    2SD0814

    Abstract: 2SD814 XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD0814(2SD814) x 2 elements 0 to 0.1 ● 0.7±0.1


    Original     		PDF XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD1206

    Abstract: 2SB895 2SB895a 2SB894 2SD1206 R 2SD1206 S 2SB792 2SD814 2SD946 2SD946A
    Text: PANASONIC INDL/ELEK-CSEflI} 7EC D | ^ 3 5 0 5 4 □ □□âflci2 2 V '^yV T Sÿ * ' 2SB792 2SB792 '> IJ ZI y PNP •3f“f l2 /S i P N P E p itax ia l P la n a r X t °2 l ^ l a t e f f l /H ig h Voltage Low-noise Amplifier 2SD814 £ ^ y ? ' J U/'Com plem entary Pair with 2SD814


    OCR Scan     		PDF 2SB792 2SD814 2SD814 2SD1206 2SB895 2SB895a 2SB894 2SD1206 R 2SD1206 S 2SB792 2SD946 2SD946A