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    2SJ19 Search Results

    2SJ19 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ196-T-AZ Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
    2SJ197(0)-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ197-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ197-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ199-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SJ19 Price and Stock

    Rochester Electronics LLC 2SJ196-T-AZ

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ196-T-AZ Bulk 773
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    Rochester Electronics LLC 2SJ195-TL-E

    PCH 4V DRIVE SERIES
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    DigiKey 2SJ195-TL-E Bulk 365
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    Rochester Electronics LLC 2SJ199-T2-AZ

    P-CHANNEL POWER MOSFET
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    Rochester Electronics LLC 2SJ199(0)-T1-AZ

    P-CHANNEL POWER MOSFET
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    DigiKey 2SJ199(0)-T1-AZ Bulk 378
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    SANYO Semiconductor Co Ltd 2SJ190

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    Bristol Electronics 2SJ190 630 4
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    Quest Components 2SJ190 504
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    2SJ19 Datasheets (87)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ19 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ19 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ19 Unknown FET Data Book Scan PDF
    2SJ190 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ190 Unknown FET Data Book Scan PDF
    2SJ190 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ190 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF
    2SJ190 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SJ191 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ191 Unknown FET Data Book Scan PDF
    2SJ191 Unknown P-Channel Power MOSFET Scan PDF
    2SJ191 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ191 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SJ191 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ191FA Unknown P-Channel Power MOSFET Scan PDF
    2sj192 Sanyo Semiconductor P-channel MOS silicon FET, very high-speed switching application Original PDF
    2SJ192 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ192 Unknown FET Data Book Scan PDF
    2SJ192 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ192 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SJ19 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ192

    Abstract: EN3765
    Text: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		EN3765 2SJ192 2083B 2SJ192] 2092B 2SJ192 EN3765 PDF

    2SJ190

    Abstract: No abstract text available
    Text: Ordering number:EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ190] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3


    Original     		EN3763 2SJ190 2SJ190] 25max 2SJ190 PDF

    87541

    Abstract: 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031
    Text: 注文コード No.N 3 7 6 3 2SJ190 No. 3 7 6 3 51899 新 2SJ190 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		2SJ190 250mm2 500mA 500mA, ITR00036 ITR00035 --30V --10V 87541 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031 PDF

    2SJ194

    Abstract: ITR00067 ITR00068
    Text: 注文コード No.N 3 7 6 7 A 2SJ194 No. 3 7 6 7 A 51899 半導体ニューズ No.3767 とさしかえてください。 2SJ194 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		2SJ194 ITR00072 --50V --10V ITR00071 ITR00074 ITR00075 2SJ194 ITR00067 ITR00068 PDF

    2SJ191

    Abstract: ITR00039 ITR00040
    Text: 注文コード No.N 3 7 6 4 A 2SJ191 No. 3 7 6 4 A 51899 半導体ニューズ No.3764 とさしかえてください。 2SJ191 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		2SJ191 ITR00043 --30V --10V IT00046 IT00047 2SJ191 ITR00039 ITR00040 PDF

    2SJ195

    Abstract: EN3768 37684
    Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ195] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195 EN3768 37684 PDF

    2SJ192

    Abstract: No abstract text available
    Text: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		EN3765 2SJ192 2083B 2SJ192] 2092B 2SJ192 PDF

    2SJ191

    Abstract: No abstract text available
    Text: Ordering number:EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ191] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		EN3764A 2SJ191 2083B 2SJ191] 2092B 2SJ191 PDF

    MARKING PB SmD TRANSISTOR SOT-89

    Abstract: marking PB 2SJ197 transistor smd .PB PB SmD TRANSISTOR SOT-89
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ197 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance 1 MAX.@VGS=-4.0V,ID=-0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-10V,ID=-0.5A


    Original     		2SJ197 OT-89 MARKING PB SmD TRANSISTOR SOT-89 marking PB 2SJ197 transistor smd .PB PB SmD TRANSISTOR SOT-89 PDF

    2SJ195

    Abstract: No abstract text available
    Text: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


    OCR Scan     		2SJ195 2083a 42693TH 2SJ195 PDF

    J196

    Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
    Text: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o


    OCR Scan     		2SJ196 2SJ196 2SK1482 IEI-620) J196 L0836 40t60 DF RV transistor PDF

    2SJ191

    Abstract: No abstract text available
    Text: 2SJ191 2083A LD L o w D rive Series V Dss = 6 0 V 2092A P Channel Power MOSFET 3764A Features • Low ON resistance •Very high-speed switching • Low-voltage drive Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


    OCR Scan     		2SJ191 10/js, 2SJ191 PDF

    2SJ197

    Abstract: No abstract text available
    Text: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X


    OCR Scan     		2SJ197 2SJ197 O2SK1483 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EET NEC / MOS FIELD EFFECT TRANSISTOR 2 S J 1 9 7 P-CH A N N EL MOS FET FOR SW ITCH IN G T h e 2SJ197, P-channei vertical ty p e M OS FE T, is a sw itching P A C K AG E D IM E N S IO N S U n it : m m device w h ich can be driven d ire c tly b y th e o u tp u t o f ICs having a 5


    OCR Scan     		2SJ197 2SJ197, K1483 1R30-00 S60-00 PDF

    2SJ193

    Abstract: 41293TH 37662
    Text: Ordering number: EN3766 _ 2SJ193 N o.3766 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. A b s o lu te M ax im u m R a tin g s at T a=25°C


    OCR Scan     		EN3766 2SJ193 250mm2 41293TH 37662 PDF

    2SJ26

    Abstract: No abstract text available
    Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6


    OCR Scan     		2SJ285 2SJ190 2SJ288 2SJ191 2SJ192 2SJ362 2SJ414 O-220 O-220ML 2SJ26 PDF

    2SJ190

    Abstract: 2SJ19
    Text: 2SJ190 4fr 2062 L D L o w D riv e S e rie s V o ss” 6 0 V P Channel P o w er M O S F E T •£■3763 F e a tu re s • Low ON resistance ■Very high-speed switching ■Low-voltage drive A bsolute M axim um R atin g s a t Ta = 25°C Drain to Source Voltage


    OCR Scan     		2SJ190 --60V, --10V, 500mA 500mA, ----20V N1292MH A8-7541 2SJ190 2SJ19 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage


    OCR Scan     		2SJ194 41293TH PDF

    diode sy 710

    Abstract: sy 710 diode 2SJ192
    Text: 2SJ192 2083A 2092A LD L o w D riv e S e rie s V qSs = 6 0 V P Channel Power MOSFET 3765 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage


    OCR Scan     		2SJ192 diode sy 710 sy 710 diode 2SJ192 PDF

    transistor sje 360

    Abstract: wn 537 a transistor TC-7687B wn 537 a fet wn 537 transistor sje 2762 2SJ199 2SK1485 transistor W1B 08
    Text: ^ — S? • 5 / — h N E C ^r MOS M O S Field E ffe c t T ra n s is to r 2SJ199 P M O S FET 2SJ199 i±, P f t T ' lisWkZ- MOS F E T T\ 5 V m S * IC t t i J j t z J : 6 ¡ £ & m m t* r f ó i r z ' f • y - f- y CO K M T O M : mm T 't o * MOS F E T iJ ?r >ffiÎÆ^IS <, X 4 -y f -> ?'=ft1Ì è ffix T


    OCR Scan     		2SJ199 2SJ199 2SK1485 transistor sje 360 wn 537 a transistor TC-7687B wn 537 a fet wn 537 transistor sje 2762 transistor W1B 08 PDF

    2SJ199

    Abstract: 2SK1485
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S J 1 9 9 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 1.5 ± 0 . 1 3— The 2SJ199, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5


    OCR Scan     		2SJ199 2SJ199, 2SK1485 2SJ199 PDF

    2SJ270

    Abstract: 2SJ26
    Text: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0


    OCR Scan     		2SJ286 2SJ193 2SJ289 2SJ194 2SJ195 2SJ275 2SJ276 2SJ27716 2SJ270 2SJ26 PDF

    2SK1482

    Abstract: 2sj196 SS-220 10v
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ196 P-CHANNEL MOS FET FOR SWITCHING OUTLINE DIMENSIONS Unit : mm


    OCR Scan     		2SJ196 2SJ196 2SK1482 SS-220 10v PDF

    EN3767

    Abstract: 2SJ194
    Text: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage


    OCR Scan     		EN3767 2SJ194 100juA -100V EN3767 PDF