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    2SJ192

    Abstract: EN3765
    Text: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3765 2SJ192 2083B 2SJ192] 2092B 2SJ192 EN3765

    2SK1414

    Abstract: No abstract text available
    Text: Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . unit:mm 2077A


    Original     		PDF EN4230 2SK1414 2SK1414] 2SK1414

    2SK1413

    Abstract: No abstract text available
    Text: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.


    Original     		PDF EN4229 2SK1413 2076B 2SK1413] 2SK1413

    2SK1419

    Abstract: No abstract text available
    Text: Ordering number:EN3557A N-Channel Silicon MOSFET 2SK1419 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. unit:mm 2063A [2SK1419]


    Original     		PDF EN3557A 2SK1419 2SK1419] O-220ML 2SK1419

    2SK1413

    Abstract: No abstract text available
    Text: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.


    Original     		PDF EN4229 2SK1413 2076B 2SK1413] 2SK1413

    2SJ192

    Abstract: No abstract text available
    Text: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3765 2SJ192 2083B 2SJ192] 2092B 2SJ192

    Untitled

    Abstract: No abstract text available
    Text: 2SK1419 2063 AP A d v a n ce d P e rfo rm a n c e Series Voss= 6 0 V N Channel Power M OSFET F eatures • Low ON resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF 2SK1419 10//S,

    2SK1414

    Abstract: ir 9637
    Text: Ordering num ber: EN 4 2 3 0 _ 2SK1414 No.4230 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F e a tu r e s - Low ON resistance, low input capacitance, very high-speed switching. • H igh reliability Adoption of H VP process .


    OCR Scan     		PDF 2SK1414 ir 9637

    2092A

    Abstract: No abstract text available
    Text: 2SJ192 2083A LD L o w D rive S eries V Dss=60V 2092A P Channel Power M OSFET Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


    OCR Scan     		PDF 2SJ192 41293TH 2092A

    2SJ193

    Abstract: 41293TH 37662
    Text: Ordering number: EN3766 _ 2SJ193 N o.3766 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. A b s o lu te M ax im u m R a tin g s at T a=25°C


    OCR Scan     		PDF EN3766 2SJ193 250mm2 41293TH 37662

    2SK1467

    Abstract: No abstract text available
    Text: Ordering num ber:EN35Ö8A 2SR1467 N0.35O8A N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF EN3508A 35O8A 2SK1467 250mm2

    Untitled

    Abstract: No abstract text available
    Text: 2SK1467 m LD L o w D riv e S e rie s V DSs = 3 0 V 2062 N Channel Power M OSFET 3 50 8A F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage


    OCR Scan     		PDF 2SK1467 250mm2X 41293TH /7190MH X-6948

    2SK1311

    Abstract: No abstract text available
    Text: 2SK1311 2062 LD L o w D rive S eries V d ss = 6 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage Vdss G ate to Source Voltage


    OCR Scan     		PDF 2SK1311 250mm2X X-6380 2SK1311

    Untitled

    Abstract: No abstract text available
    Text: 2SK1414 207 7 U H U l t r a h i g h V o l t a g e S e r ie s V DSs = 1 5 0 0 V N Channel Power M OSFET £4230 F eatures • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF 2SK1414 10/iS, 10//S

    Untitled

    Abstract: No abstract text available
    Text: 2SK1414 2077 U H {U ltra h ig h V o lta g e S eries V Dss= 1 5 0 0 V N Channel Power MOSFET 4230 F eatu res • Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF 2SK1414

    ns 4203

    Abstract: 2SK1886 FI1216
    Text: O rd e rin g n u m b e r :E N 4 2 0 3 SA\YO 2SK1886 No.4203 N-Channel MOS Silicon FE T i Very High-Speed Switching Applications F e a tu re s •Low ON resistance. - Very high-speed switching. •Low-voltage drive. - M icaless package facilitating mounting.


    OCR Scan     		PDF 2SK1886 42G3-3/3 ns 4203 2SK1886 FI1216

    diode sy 710

    Abstract: sy 710 diode 2SJ192
    Text: 2SJ192 2083A 2092A LD L o w D riv e S e rie s V qSs = 6 0 V P Channel Power MOSFET 3765 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage


    OCR Scan     		PDF 2SJ192 diode sy 710 sy 710 diode 2SJ192

    2SK1413

    Abstract: No abstract text available
    Text: Ordering number : EN 4 2 2 9 _2SK1413 No.4229 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications Features • Low ON resistance, low input capacitance, very high-speed switching. •High reliability Adoption of HVP process .


    OCR Scan     		PDF 2SK1413 2SK1413

    Untitled

    Abstract: No abstract text available
    Text: 2SK1412 2078 U H U ltra h ig h V o lta g e S e rie s V DSS= 1 5 0 0 V N Channel Power MOSFET 4228 F e atu re s • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • Micaless package facilitating mounting.


    OCR Scan     		PDF 2SK1412 10/us,

    k141

    Abstract: No abstract text available
    Text: 2SK1412 2078 U H U ltra h ig h V o lta g e S eries V DSS= 1 5 0 0 V N Channel Power M O SFET E 4228 F e a tu re s - Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • M icaless package facilitating m ounting.


    OCR Scan     		PDF 2SK1412 O-220FI 41293TH AX-9637 k141

    EN3767

    Abstract: 2SJ194
    Text: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage


    OCR Scan     		PDF EN3767 2SJ194 100juA -100V EN3767

    1J23 fet

    Abstract: 2SJ192 EN3765
    Text: Ordering number: EN3765 _ 2SJ192 No.3765 P-Channel MOS Silicon FET SA IVO i Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b s o lu te M axim um R a tin g s a t Ta = 25°C


    OCR Scan     		PDF EN3765 2SJ192 10/iS, 1J23 fet

    2SK1412

    Abstract: No abstract text available
    Text: Ordering number : EN 4228 _ 2SK1412 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F eatures - Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process . • Micaless package facilitating mounting.


    OCR Scan     		PDF 2SK1412 10//S,

    2SK1419

    Abstract: No abstract text available
    Text: O rdering n um b er:-EN 3 5 57 A 2SK1419 N0.3557A N-Channel MOS Silicon FET SANYO- i Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A b so lu te M axim um R atings a tT a = 25°C


    OCR Scan     		PDF -EN3557A 2SK1419 10/iS,