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    2SK1467 Search Results

    2SK1467 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1467 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1467 Unknown FET Data Book Scan PDF
    2SK1467 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SK1467 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF

    2SK1467 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1467

    Abstract: marking Kc X-6948
    Text: Ordering number:EN3508A N-Channel Silicon MOSFET 2SK1467 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1467] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


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    PDF EN3508A 2SK1467 2SK1467] 25max 2SK1467 marking Kc X-6948

    2SK1467

    Abstract: No abstract text available
    Text: Ordering number:EN3508A N-Channel Silicon MOSFET 2SK1467 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1467] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original
    PDF EN3508A 2SK1467 2SK1467] 25max 2SK1467

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward


    Original
    PDF EN4893 FX853 FX853 2SK1467 SB05-05P, FX853]

    TA-0118

    Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
    Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward


    Original
    PDF EN4893 FX853 FX853 2SK1467 SB05-05P, FX853] TA-0118 MOSFET FOR 50HZ SWITCHING APPLICATIONS

    FX604

    Abstract: 2SK1467
    Text: Ordering number:EN4887 FX604 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.


    Original
    PDF EN4887 FX604 FX604 2SK1467, FX604] 2SK1467

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original
    PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    2SK1467

    Abstract: FX853 ITR11601 ITR11602 ITR11603 ITR11604 ITR11605 ITR11606 ITR11608 SB05
    Text: 注文コード No. N 4 8 9 3 FX853 No. N 4 8 9 3 72500 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード FX853 特長 DC / DC コンバータ用 ・低オン抵抗超高速スイッチング、低電圧駆動の N チャネル MOS 形電界効果トランジスタと逆回復時間が


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    PDF FX853 FX853 2SK1467 SB05-05P 750mm2 ITR11614 ITR11613 ITR11611 ITR11615 2SK1467 ITR11601 ITR11602 ITR11603 ITR11604 ITR11605 ITR11606 ITR11608 SB05

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original
    PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    Untitled

    Abstract: No abstract text available
    Text: 2SK1467 m LD L o w D riv e S e rie s V DSs = 3 0 V 2062 N Channel Power M OSFET 3 50 8A F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage


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    PDF 2SK1467 250mm2X 41293TH /7190MH X-6948

    2SK1885

    Abstract: 2SK2437 2SK2438
    Text: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C


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    PDF 2SK1847 2SK1467 2SK1724 2SK2437 2SK1468 2SK1469 2SK2046 2SK2438 2SK2439 2SK2555 2SK1885

    e1220

    Abstract: 2SK2437
    Text: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.


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    PDF MT950206TR e1220 2SK2437

    2SK2747

    Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282


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    PDF Ta-25t) 2SJ282 T0220 2SJ348 2SJ478V 2SJ254 T0220ML 2SJ255 2SK2747 2SK2748 2SJ403 2SK536 2SK1467 2SJ256 2SJ263 2SJ264

    2SK1467

    Abstract: No abstract text available
    Text: Ordering num ber:EN35Ö8A 2SR1467 N0.35O8A N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage


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    PDF EN3508A 35O8A 2SK1467 250mm2

    J289

    Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
    Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications


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    PDF Sma11-sized 2SK1839< 2SK536 2SK1840UJ) 3SK248CNJ) 2SK669 2SK1841 2SK583 Characteristics/Ta-25X; 12/55m J289 3SK266 2SK1728 3sk251 DS-17 SANYO

    CI 7001

    Abstract: 2SD1203 SS170 2sb1205 2SD180
    Text: so h yo New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5 /6 - p in XPs a re in te rm e d ia te siz e d d e v ic e s between Sanyo PCP and TP packages and have high power c a p a b il i ty . T h is package lin e in c lu d e s la rg e c u rre n t sw itc h in g t r a n s i s t o r s e r i e s , power MOS FET s e rie s , and o th e r d evice s e rie s .


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    PDF FX855 FX851 T940120TR CI 7001 2SD1203 SS170 2sb1205 2SD180

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


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    PDF MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking

    2SK146

    Abstract: No abstract text available
    Text: Ordering num ber: EN4892 _ FX852 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications Features • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching and Iow-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates


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    PDF EN4892 FX852 FX852 2SK1467 SB07-03P, 2SK146

    K1412

    Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
    Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP


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    PDF 17G7ti 2SK1467 2SK14691 2SK1470 --2SK1471 2SK1472 2SK1473 2SK1474 2SK1475 1800m K1412 K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460

    2SK1471

    Abstract: 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001
    Text: SAUYO New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.


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    PDF 900mm2XO SB07-03P 2SK1467 SB05-05P f-10pF 2SJ190 SB05-09 2SK1470 2SK1471 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


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    PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD

    J289

    Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
    Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications


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    PDF 3SK265 3SK266 3SK248 12/55m 2/80m 45/-/50m 130m/65m 21/90m MT931224TR J289 K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN 4893 _FX853 No.4893 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching


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    PDF FX853 FX853 2SK1467 SB05-05P, 10//S,

    2SK1487

    Abstract: LM 1495 2sk1477 2SK1486 2SK1480 1494z 2SK1470 2SK1482 2SK1491 2SK1465
    Text: - 106 - M % tt « m £ m it Í V Ì 1 % K £ ft ft « V* V P d /P c h *t* (V) * * ft * (A) (W) Ig s s (max) (A) Vg s (V) (min) (A) (max) V d s (A) (V) (Ta=25°C) ft 4# % (min) (max) V d s (V) (V) (V) £ m (min) (S) Id (A) Vd s (V) Id (A) 2SK1465 HS SW


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    PDF 2SK1465 2SK1466 2SK1467 2SK1468 2SK1469 2SK1470 2SK1487 100nstyp 2SK1488 140ns, 2SK1487 LM 1495 2sk1477 2SK1486 2SK1480 1494z 2SK1470 2SK1482 2SK1491

    FX604

    Abstract: No abstract text available
    Text: Ordering num ber:EN4887 samyo i N°-4^ II _ N-Channel SiliconFX604 MOSFET Ultrahigh-Speed Switching Applications a _ Features • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed


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    PDF EN4887 FX604 2SK1467, 750mm2X0 750mm2X