Untitled
Abstract: No abstract text available
Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4893
FX853
FX853
2SK1467
SB05-05P,
FX853]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
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EN4886
FX603
FX603
2SJ187,
FX603]
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BX-1458
Abstract: IC UA 1458 marking 503 BX1458 2SB1202 FX503
Text: Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX503 houses two chips, each being equivalent
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EN4903
FX503
FX503
2SB1202,
FX503]
BX-1458
IC UA 1458
marking 503
BX1458
2SB1202
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marking 501
Abstract: BX1388
Text: Ordering number:EN4877 FX501 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX501 houses two chips, each being equivalent
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EN4877
FX501
FX501
2SB1205,
FX501]
marking 501
BX1388
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EN5030
Abstract: No abstract text available
Text: Ordering number:EN5030 FX510 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX510 houses two chips, each being equivalent
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EN5030
FX510
FX510
2SA1552,
FX510]
EN5030
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EN5387
Abstract: FX901 PNP Transistor MOSFET
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
EN5387
FX901
PNP Transistor MOSFET
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FX207
Abstract: marking 207
Text: Ordering number:EN5050 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate
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EN5050
FX207
FX207]
FX207
marking 207
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · Low-voltage drive. unit:mm 2121 [FX205] Switching Time Test CIrcuit 1:No Contact
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EN4917
FX205
FX205]
750mmh
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TA-0118
Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4893
FX853
FX853
2SK1467
SB05-05P,
FX853]
TA-0118
MOSFET FOR 50HZ SWITCHING APPLICATIONS
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FX604
Abstract: 2SK1467
Text: Ordering number:EN4887 FX604 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
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EN4887
FX604
FX604
2SK1467,
FX604]
2SK1467
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2SB1203
Abstract: FX505 ITR11390 ITR11391 bx13 n4879
Text: 注文コード No. N 4 8 7 9 FX505 No. N4879 O0500 FX505 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・PNP トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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FX505
N4879
O0500
FX505
2SB1203
750mm2
500mA
2SB1203
ITR11390
ITR11391
bx13
n4879
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2SC3647
Abstract: FX507 ITR11412 ITR11413 ITR11414
Text: 注文コード No. N 4 9 0 5 FX507 No. N4905 O3000 FX507 NPN エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 用途 ・液晶バックライトドライブ用。 特長 ・NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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FX507
N4905
O3000
FX507
2SC3647
750mm2
100mA
2SC3647
ITR11412
ITR11413
ITR11414
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TA-2770
Abstract: 2SJ416 FX856 53723
Text: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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FX856
FX856
2SJ416
SB07-03P
750mm2
IT01339
IT01337
IT01341
IT01342
TA-2770
2SJ416
53723
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2SB1205
Abstract: FX501 ITR11346 ITR11347 ITR11348 ITR11349 BX1388
Text: 注文コード No. N 4 8 7 7 FX501 No. N 4 8 7 7 80300 FX501 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・PNP トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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FX501
FX501
2SB1205
750mm2
500mA
ITR11354
2SB1205
ITR11346
ITR11347
ITR11348
ITR11349
BX1388
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate
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EN5051
FX208
FX208]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4895 FX855 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4895
FX855
FX855
2SK1470
SB0509,
FX855]
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2SJ416
Abstract: FX856 SB07-03P 53723
Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One
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ENN5372A
FX856
FX856]
FX856
2SJ416
SB07-03P,
SB07-03P
53723
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5029 FX509 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX509 houses two chips, each being equivalent
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EN5029
FX509
FX509
2SB1215,
FX509]
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EN5051
Abstract: No abstract text available
Text: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate
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EN5051
FX208
FX208]
EN5051
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FX504
Abstract: marking 504
Text: Ordering number:EN4904 FX504 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. · The FX504 houses two chips, each being equivalent
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EN4904
FX504
FX504
2SD1802,
FX504]
marking 504
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2SD1803
Abstract: FX506 bx139
Text: Ordering number:EN4880 FX506 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX506 houses two chips, each being equivalent
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EN4880
FX506
FX506
2SD1803,
FX506]
2SD1803
bx139
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FX203
Abstract: MARKING 203 52641
Text: Ordering number:EN5264 FX203 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2121 [FX203] Switching Time Test CIrcuit 1:No Contact
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EN5264
FX203
FX203]
FX203
MARKING 203
52641
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2SB1203
Abstract: FX505
Text: Ordering number:EN4879 FX505 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX505 houses two chips, each being equivalent
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EN4879
FX505
FX505
2SB1203,
FX505]
2SB1203
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2SD1803
Abstract: FX506 ITR11401 ITR11402 ITR11403 N4880
Text: 注文コード No. N 4 8 8 0 FX506 No. N4880 O0500 FX506 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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FX506
N4880
O0500
FX506
2SD1803
750mm2
500mA
2SD1803
ITR11401
ITR11402
ITR11403
N4880
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