2SK1412 Search Results

Contextual Info: 2SK1412 2078 U H U ltra h ig h V o lta g e S e rie s V DSS= 1 5 0 0 V N Channel Power MOSFET 4228 F e atu re s • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • Micaless package facilitating mounting.

k141

Contextual Info: 2SK1412 2078 U H U ltra h ig h V o lta g e S eries V DSS= 1 5 0 0 V N Channel Power M O SFET E 4228 F e a tu re s - Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • M icaless package facilitating m ounting.

2SK1412

Contextual Info: Ordering number : EN 4228 _ 2SK1412 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F eatures - Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process . • Micaless package facilitating mounting.

k1412

Abstract: 2SK1412LS ITR01044 TC320 TA-3431
Contextual Info: 2SK1412LS Ordering number : EN4228C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1412LS High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance. Ultrahigh-speed switching. High reliability Adoption of HVP process .

K1412

Abstract: 2SK1412LS TA-3431 41293 ITR01044 ITR01045 ITR01046 ITR01047 ENN4228B
Contextual Info: Ordering number : ENN4228B 2SK1412LS N-Channel Silicon MOSFET 2SK1412LS Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions Low ON-resistance, low input capacitance. Ultrahigh-speed switching. High reliability Adoption of HVP process .

2SK1412

Contextual Info: Ordering number:EN4228 N-Channel Silicon MOSFET 2SK1412 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.

Contextual Info: • UH Series Lineup Absolute maximum ratings at Ta = 25°C Type No. ftdtage v t» l m Vcss V 2SK1455 2SK1456 «0 P* (A) m 0.2 Electrical characteristics at Ta = 25°C . . Bpsm Clss tVfsl % {«#} typ-ma* mtitom ax typ atVGS = i0V (pF) m m m 30

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SK1411

Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
Contextual Info: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

K1412

Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Contextual Info: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP

13FLP

Abstract: sj22 serie 2sk
Contextual Info: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6

TN6Q04

Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Contextual Info: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use

Contextual Info: SA/iYO T0-220FI LS (Ful 1 Isolation) Outline Series S a n y o ’ s new o u t l i n e T 0 - 2 2 0 F I ( F u l 1 i s o l a t i o n a j c .Dynamic: focus : perfect isolation t y p e ) h a s a wi de v a r i e t y o f p r o d u c t s . transi stoi-s Be i n g out of

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

Contextual Info: SA0YO T 0 - 2 2 0 F I LS ( F u l 1 Isolation) Sanyo's ne w o u t l i n e T0-220FI(Ful 1 is o la tio n o|c Dynami cs These p r o d u c t s technology. are f ocus fabricated over size the electron This of an e l e c t r o n CRT s c r e e n by S a n y o ’ s o r i g i n a l

2sK1413

Abstract: T0220FI Vdss 1500V
Contextual Info: SAftYO POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

Contextual Info: SA/im POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and