2SK111 Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

nsi 60 jg

Contextual Info: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS U n it in mm

k1113

Abstract: 2SK111
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-7r-MOSin 2SK1113 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8 MAX. . 3 , 5.2±0.2 FEATURES : Í V

Contextual Info: 2SK1119 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

k1119

Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

Contextual Info: TO SHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR j <; V SILICON N CHANNEL MOS TYPE tt-MOSII-5 k Hm. 1• 1■ 1■ q«T1 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in min “

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S K 1 119 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1119) INDUSTRIAL APPLICATIONS U n it in mm HIGH SPEED, HIGH C URRENT SW ITC H IN G APPLICATIONS. DC-DC CO NVERTER A N D M O TO R DRIVE APPLICATIO N S.

2SK1114

Contextual Info: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1114 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n i t i n mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X . , FEATURES :

diode 1NU

Abstract: 2SK1115 diode 1NU 0 b
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- 7r-MOSm 2SK1115 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER,RELAY DRIVE AND HOTOR DRIVE APPLICATIONS. Unit in mm 3.6±0.2 10.3MAX. 3L1 FEATURES: • 4-Volt Gate Drive

Contextual Info: TOSHIBA 2SK1119 Field Effect Transistor In d u s tria l A p p lic a tio n s U n it in m m Silicon N Channel MOS Type n-MOS II >3.6 ± 0 . 2 1 0 .3 M AX High Speed, High Current DC-DC Converter, w \ Relay Drive and Motor Drive Applications F e a tu re s X

2SK1117

Abstract: transistor 2sk1117
Contextual Info: 2SK1117 FIELD EFFECT TRANSISTOR_ s iu C O ^ ^ ^ H A N N E ^ M O ^ ^ ^ ^ ^ M O S n T HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nun ¥ 10.3 M A Ï .

K1119

Abstract: 2SK1119 2-10P1B
Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK111

Abstract: 24N10 2-10P1B 2SK1119
Contextual Info: TOSHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Drain-Source ON Resistance

Contextual Info: 2SK1119 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(O N )~3.00 (Typ.)

transistor a950

Abstract: A950 Y OA
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1118 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ti-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2SK1112

Abstract: transistor 2sk1112
Contextual Info: TOSHIBA 2SK1112 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance " R ds (ON) = 0 .1 2£2 (Typ.)

k1119

Abstract: transistor k1119 power switching
Contextual Info: FIELD EFFECT TRAN SISTO R 2SK1119 SILICON N CHANNEL MOS TYPE a:-MOSii HIGH S P EE D ,H IG H CURRENT SWITCHING A P P LIC ATIO N S. INDUSTRIA L APPLICATIO NS SWITCHING POWER SUPPLY A PP LIC ATIO NS. U n i t in mm 10.3MAI. *3.6±0.2 îï FEATURES: • Low D ra in -S o u r c e ON R e s is ta n c e :

D3A transistor

Abstract: 2SK1118 D3A DIODE Field Effect Transistor Silicon N Channel MOS vdss 600 5400V
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE w-MOSn 2SK1118 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)

k1119

Abstract: 2SK1119 2-10P1B VDD400 2SK1119-3
Contextual Info: 2SK1119 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅡ.5 2SK1119 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS ( ON ) = 3.0Ω(標準) z 順方向伝達アドミタンスが高い。

k1119

Abstract: 2-10P1B 2SK1119
Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current

2SK1113

Abstract: Q 206
Contextual Info: TOSHIBA 2SK1113 Field Effect Transistor Silicon N Channel MOS Type L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • ^DS(ON) = 0.33Q (Typ.)