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    2SK1112 Search Results

    2SK1112 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1112 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1112 Toshiba Original PDF
    2SK1112 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1112 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK1112 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    MG150Q1JS44

    Abstract: 1S1885 diode MG150Q1JS
    Text: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.


    Original     		MG150Q1JS44 2-109C1A MG150Q1JS44 1S1885 diode MG150Q1JS PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078 PDF

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402 PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent PDF

    2SK2056

    Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
    Text: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.


    Original     		2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352 PDF

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • R DS(ON) = 0.12£2 (Typ.)


    OCR Scan     		2SK1112 PDF

    2SK1112

    Abstract: transistor 2sk1112
    Text: TOSHIBA 2SK1112 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance " R ds (ON) = 0 .1 2£2 (Typ.)


    OCR Scan     		2SK1112 2SK1112 transistor 2sk1112 PDF

    2SK1112

    Abstract: S2-5V relay transistor 2sk1112
    Text: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Fe a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		2SK1112 20kii) S2-5V relay transistor 2sk1112 PDF

    YTF450

    Abstract: YTF451 YTFP450
    Text: Replacement Guide T y p e No. E q u i v a le n t/ r e c o m m e n d e d p r o d u c t T y p e N o. 2SK1251 2SK1112 YTF450 2SK1252 2SK1113 YTF451 2SJ123 2SJ147 YTFP450 YTF441 - YTF442 YTF443 YTF452 YTF453 YTF440 2SK1488 E q u i v a le n t/ r e c o m m e n d e d p r o d u c t


    OCR Scan     		2SK1251 2SK1252 2SJ123 YTF440 YTF441 2SK1112 2SK1113 2SJ147 YTF450 YTF451 YTFP450 PDF

    L5A relay

    Abstract: 2SK1112
    Text: 2SK1112 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8MAX FEATURES : • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		2SK1112 20kfl) L5A relay 2SK1112 PDF

    2SK1112

    Abstract: IL1B
    Text: ö 5ë 7S* Sn o 00 it »ri dfQl ? ö IS 5fv mPSIimìn xtr rï n V -*• r • 3E Xír 3 P ñ -iV a > v. . 1 >* 3¡ £ m ss 3* iS îff ít « a » 50 r+ cr n!l n iY a 1 -X ~r iÜ » • v: I •• fri "0 o P+50 sr o cr i p -n Ta = 2 5°C TOSHIBA rv ctn


    OCR Scan     		2SK1112 10/is 2SK1112 IL1B PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    2SK1143

    Abstract: 2SK1142 2SK1117 2SK1139 2SK1121 2SK1138 2SK1118 2SK1136 2sk1114 2SK1105
    Text: r. . . . m *t £ £ m ÌÈ Í Í t H ^ fë aË 2 P d /P c h «1 £ Hf m f* V * 2SKU05 -M tn m SW-Reg, UPS, DDC MOS N E 800 DSS 2SK1108 NEC C-MIC, Imp-C J N D 20 DSX 2SK1109 NEC (V) » * ±20 S (A) & 3 D (W) lass (max) (A) 80 ±100n 10m G 100m fà % (min) (max) Vds


    OCR Scan     		2SK1105 2SK1108 2SK1109 2SKU12 2SK1113 170ns. 550nstyp VDD-30V 2SK1134 155ns, 2SK1143 2SK1142 2SK1117 2SK1139 2SK1121 2SK1138 2SK1118 2SK1136 2sk1114 2SK1105 PDF

    2SK2056

    Abstract: 2SK1349 2SK1603 2sk1601 2SK1363 2SK1344 2SK1768
    Text: Power M O S FET jt-MOS I!-5 F1 Maximum Rating Application A C 2 2 0 V Input Switching Power Supply Type No. R d s (ON)(£l) Package •2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK2078 2 SK 2 3 2 0 2SK1603 2SK1601 2SK1643


    OCR Scan     		2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK1349 2SK1603 2sk1601 2SK1363 2SK1344 2SK1768 PDF

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P PDF

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 PDF

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan     		2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915 PDF

    2SJ239

    Abstract: 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SJ201-Y 2SK1079 2SJ238
    Text: MOSFET Characteristic Chart M axim u m R ating Id |Am ps| V oss [Volts] R d s ON Pd [W atts] TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n DC/DC converter 2SJ147 T0-220(IS) -12 -60 40 0.17 0.2 -10 -6 -1.5 ~ -3.5


    OCR Scan     		2SJ147 2SJ201-Y 2SJ238 TE12L) 2SJ239 2SJ240 2SJ241 2SJ312 2SK1078 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SK1079 PDF

    Marcon capacitor Co

    Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436
    Text: Contents Features . 1 Applications. 1 Block d ia g ra m . 1 Pin A s s ig n m e n t. ; .


    OCR Scan     		RCH855 47//H) 2SK1112* /50mA 2SK1112. Marcon capacitor Co CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF