Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK387 Search Results

    SF Impression Pixel

    2SK387 Price and Stock

    Toshiba America Electronic Components 2SK3878(F)

    Mosfet, N Channel, 900V, 9A, Sc-65; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Toshiba 2SK3878(F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2SK3878(F) Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SK3879-TE24LQ

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK3879-TE24LQ 7,813
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components 2SK3878

    POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 900V, 1.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3878 34
    • 1 $10.4364
    • 10 $7.6534
    • 100 $6.9576
    • 1000 $6.9576
    • 10000 $6.9576
    		Buy Now
    ComSIT USA 2SK3878 40
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Win Source Electronics 2SK3878 10,000
    • 1 -
    • 10 -
    • 100 $1.1042
    • 1000 $0.8972
    • 10000 $0.8972
    		Buy Now

    Toshiba America Electronic Components 2SK3878F

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK3878F 4,556
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components 2SK3878(STA1.E.S)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics 2SK3878(STA1.E.S) 80,000
    • 1 -
    • 10 -
    • 100 $1.018
    • 1000 $0.679
    • 10000 $0.679
    		Buy Now

    2SK387 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK387 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK387 Toshiba Original PDF
    2SK387 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK387 Unknown FET Data Book Scan PDF
    2SK387 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK387 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK387 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK3870-01 Fuji Electric N-channel Silicon Power Mosfet Original PDF
    2SK387/1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3871-01MR Fuji Electric N-channel Silicon Power Mosfet Original PDF
    2SK387/2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3872-01L Fuji Electric N-Channel Silicon Power MOSFET, Super FAP-G Series Original PDF
    2SK3872-01S Fuji Electric N-Channel Silicon Power MOSFET, Super FAP-G Series Original PDF
    2SK3872-01SJ Fuji Electric N-Channel Silicon Power MOSFET, Super FAP-G Series Original PDF
    2SK387/3 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK387/4 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK387/5 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3875-01 Fuji Electric Power MOSFET / Super FAP-G Series Original PDF
    2SK387/6 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3876-01R Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF

    2SK387 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3878

    Abstract: 2SK3878STA1 2sk3878
    Text: 2SK3878 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		2SK3878 k3878 2SK3878STA1 2sk3878 PDF

    2sk3875

    Abstract: No abstract text available
    Text: 2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		2SK3875-01 2sk3875 PDF

    SJ 76 A DIODE

    Abstract: 2sk387201l
    Text: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		2SK3872-01L Symbol48V 100ms SJ 76 A DIODE 2sk387201l PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK3879 PDF

    k3878

    Abstract: transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65 PDF

    2SK3875

    Abstract: 2SK3875-01
    Text: 2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		2SK3875-01 2SK3875 2SK3875-01 PDF

    k3879

    Abstract: 65a3 2SK3879
    Text: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK3879 k3879 65a3 2SK3879 PDF

    k3878

    Abstract: transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 k3878 transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor PDF

    2SK3871-01MR

    Abstract: No abstract text available
    Text: 2SK3871-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		2SK3871-01MR O-220F 100ms 2SK3871-01MR PDF

    2SK3879

    Abstract: K3068
    Text: 2SK3879 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3879 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.2 S (標準)


    Original     		2SK3879 2-10S2B 2SK3879 K3068 PDF

    transistor Toshiba K3878

    Abstract: K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 transistor Toshiba K3878 K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor PDF

    2SK3870-01

    Abstract: No abstract text available
    Text: 2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		2SK3870-01 O-220AB 100ms 2SK3870-01 PDF

    transistor Toshiba K3878

    Abstract: k3878 toshiba toshiba k3878 k3878 APPLICATION NOTE K3878 transistor k3878 2SK3878 2sk3878 toshiba
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 transistor Toshiba K3878 k3878 toshiba toshiba k3878 k3878 APPLICATION NOTE K3878 transistor k3878 2SK3878 2sk3878 toshiba PDF

    2SK3876

    Abstract: 2SK3876-01R
    Text: 2SK3876-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		2SK3876-01R 2SK3876 2SK3876-01R PDF

    2SK3879

    Abstract: K3879 2SK38 k387
    Text: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK3879 2SK3879 K3879 2SK38 k387 PDF

    2SK3870-01

    Abstract: 2sk387
    Text: 2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3870-01 O-220AB 100ms 2SK3870-01 2sk387 PDF

    2SK3874

    Abstract: 2SK3874-01R
    Text: 2SK3874-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3874-01R 2SK3874 2SK3874-01R PDF

    2SK3873

    Abstract: 2SK3873-01 2sk38
    Text: 2SK3873-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		2SK3873-01 2SK3873 2SK3873-01 2sk38 PDF

    K3878

    Abstract: toshiba k3878 2SK3878 k3878 toshiba SC-65 2sk3878 toshiba VDD400
    Text: 2SK3878 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		2SK3878 SC-65 2-16C1B K3878 toshiba k3878 2SK3878 k3878 toshiba SC-65 2sk3878 toshiba VDD400 PDF

    k3878

    Abstract: transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba PDF

    2SK3879

    Abstract: K3879
    Text: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK3879 2SK3879 K3879 PDF

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 PDF

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 PDF

    2SK387

    Abstract: 2sk38
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK387 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 20l5M a x . FEATURES : . Low Drain-Source ON Resistance : Rd S(ON)~0.12fi (Typ.)


    OCR Scan     		2SK387 20l5M 2SK387 2sk38 PDF