2SK1529 Search Results

2SK1529 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK1529	Toshiba		Original	PDF	44.05KB	9
2SK1529	Toshiba	TRANS MOSFET N-CH 180V 10A 3(2-16C1B)	Original	PDF	246.07KB	4
2SK1529	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK1529	Toshiba	N-Channel MOSFET	Original	PDF	292.17KB	4
2SK1529	Unknown	HIGH POWER AMPLIFIER APPLICATION	Scan	PDF	183.07KB	3
2SK1529	Unknown	FET Data Book	Scan	PDF	105.24KB	2
2SK1529	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	58.42KB	1
2SK1529	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	62.59KB	1
2SK1529	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	63.92KB	1
2SK1529	Toshiba	Silicon N channel field effect transistor for high power amplifier applications	Scan	PDF	165.36KB	3
2SK1529O	Toshiba	Silicon N-Channel FET	Scan	PDF	115.87KB	3
2SK1529Y	Toshiba	TRANS MOSFET N-CH 180V 10A 3(2-16C1B)	Original	PDF	246.07KB	4

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2SK1529 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220	PDF
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10	PDF
Contextual Info: 2SJ200 東芝電界効果トランジスタシリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : \|Yfs\|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。	Original	2SJ200 2SK1529	PDF
2SK1529 Abstract: K1529 2SJ200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 K1529 2SJ200	PDF
2SK1529 Abstract: Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 Toshiba 2SJ	PDF
Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)	Original	2SK1529 2SJ200 2-16C1B K1529	PDF
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b	PDF
2SK1529 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.	OCR Scan	2SK1529 2SJ200 2SK1529	PDF
K1529 Abstract: 2SK1529 2SJ200 Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ	PDF
2SJ200 Abstract: 2SK1529 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529	PDF
2SJ200 Abstract: 2SK1529 SC-65 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in m m • H ig h B reak d o w n V o ltag e • H ig h F o rw a rd T ra n s fe r A d m ittan ce : \|Y fs\|= 4 .0 S T yp .	OCR Scan	2SK1529 2SJ200 2SK1529 SC-65	PDF
2SK1529 Abstract: toshiba 2Sj200 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gg= 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.)	OCR Scan	2SK1529 2SJ200 2SK1529 toshiba 2Sj200	PDF
c 111 transistor Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) . Complementary to 2SJ200	OCR Scan	2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor	PDF
Contextual Info: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529	OCR Scan	2SJ200 -180V 2SK1529	PDF

2SK1529 Contextual Info: TO SHIBA 2SK1529 Field Effect Transistor Unit in m m 15.9 MAX Silicon N Channel MOS Type rc-MOS II # 3 .2 ±0.2 High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Adm ittance - "Yfs = 4.OS (Typ.)	OCR Scan	2SK1529 2SJ200 SC-65 2SK1529	PDF
Contextual Info: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.) Complementary to 2SK1529	OCR Scan	2SJ200 --180V 2SK1529	PDF
K1529 Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200	PDF
2SJ200 Abstract: 2SK1529 transistor application Toshiba 2SJ Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ	PDF
K1529 Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ	PDF
2SJ200 Abstract: 2SJ20 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20	PDF
toshiba j200 Contextual Info: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : \|Yfg\| = 4.0S Typ. Complementary to 2SK1529	OCR Scan	2SJ200 toshiba j200	PDF
k1529 Abstract: 2SJ200 2SK1529 SC-65 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in mm : V j g g = 180V • H igh Forw ard Transfer Adm ittance : \|Yfs\|= 4.0S Typ.) • Com plem entary to 2SJ200	OCR Scan	2SK1529 2SJ200 k1529 2SJ200 2SK1529 SC-65	PDF
Contextual Info: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SK1529 2SJ200	PDF
2sj200 Abstract: 2SK1529 Toshiba 2SJ Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2sj200 2SK1529 Toshiba 2SJ	PDF

2SK1529 Search Results

2SK1529 Datasheets (12)

2SK1529 Price and Stock

Toshiba America Electronic Components 2SK1529

2SK1529 Datasheets Context Search

2SK1118

TRANSISTOR bH-10

2SK1529

2SK1529

2SK1529

2SK1529

K1529

2SJ200

2SJ200

2SK1529

c 111 transistor

2SK1529

K1529

2SJ200

K1529

2SJ200

toshiba j200

k1529

2sj200